Untitled
Abstract: No abstract text available
Text: ERmet ZD www.erni.com Catalog E 074505 04/07 Edition 7 www.erni.com Catalog E 074505 04/07 Edition 7 ERmet ZD High Speed Differential Hard Metric Connector System Table of Contents ERmet ZD High Speed Differential Hard Metric Connector System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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23230/USA
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Untitled
Abstract: No abstract text available
Text: ERmet ZD High Speed Differential Hard Metric Connector System ERmet ZD Male and Female Module with Pressfit Termination Description Technical Features The ERmet ZD is specifically designed for high speed differential signaling in telecom applications at data rates of up
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E83005
E84703
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973046
Abstract: 973031 973056 DXSN2285 973028 973019 973080 ERmet ZD E83005 IEC60512
Text: ERmet ZD www.erni.com Catalog E 074505 04/07 Edition 7 www.erni.com Catalog E 074505 04/07 Edition 7 ERmet ZD High Speed Differential Hard Metric Connector System Table of Contents ERmet ZD High Speed Differential Hard Metric Connector System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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23230/USA
973046
973031
973056
DXSN2285
973028
973019
973080
ERmet ZD
E83005
IEC60512
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973046
Abstract: 973028 DXSN2285 973056 973031 ERNI 973031 225-EF ERmet ZD 6U160 E83005
Text: ERmet ZD www.erni.com Katalog D 074603 09/10 Ausgabe 1 www.erni.com Katalog D 074603 09/10 Ausgabe 1 ERmet ZD High-Speed Steckverbindersystem Inhaltsverzeichnis Allgemeines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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Untitled
Abstract: No abstract text available
Text: ERmet ZD www.erni.com Katalog D 074603 09/10 Ausgabe 1 www.erni.com Katalog D 074603 09/10 Ausgabe 1 ERmet ZD High-Speed Steckverbindersystem Inhaltsverzeichnis Allgemeines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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D8243
Abstract: dallas nvram C900 DS2436 DS2436Z
Text: DS2436 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2436 Battery ID/Monitor Chip PACKAGE OUTLINE • O n -b o a rd A/D converter monitors battery voltage for e n d -o f-c h a rg e and e n d -o f-d is c h a rg e determ ination QE [IE 1 8 ZD 2 7 ZD NC DQ CLL
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DS2436
256-bit
DS2436Z
D8243
dallas nvram
C900
DS2436
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GAL20V8D
Abstract: ISPGDX160A GAL20LV8C 2064VE-84PLCC ZL30B
Text: Third-Party Programmer Support for GAL, ispGAL, ispGDX, ispLSI, and ispPAC Devices Rev. 3.30 Device GAL16LV8C GAL16LV8Z/ZD GAL16LV8D GAL16V8/A/B GAL16V8C GAL16V8D GAL16V8Z GAL16V8ZD GAL16VP8B GAL18V10 GAL18V10B GAL20LV8C GAL20LV8ZD GAL20LV8D GAL20RA10 GAL20RA10B
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GAL16LV8C
GAL16LV8Z/ZD
GAL16LV8D
GAL16V8/A/B
GAL16V8C
GAL16V8D
GAL16V8Z
GAL16V8ZD
GAL16VP8B
GAL18V10
GAL20V8D
ISPGDX160A
GAL20LV8C
2064VE-84PLCC
ZL30B
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GAL20V8D
Abstract: allpro 88 GAL16V8D GAL20RA10 30B1 chiplab gal16lv8c GAL20V8C GAL22V10D ISPGAL22LV10
Text: Third-Party Programmer Support for ispGAL, ispPAC, isp/pLSI, and ispGDX Devices Rev. 3.01 Device GAL16LV8C & GAL16LV8Z/ZD GAL16LV8D GAL16V8/A/B GAL16V8C GAL16V8D GAL16V8Z & GAL16V8ZD GAL16VP8B GAL18V10 GAL18V10B GAL20LV8C & GAL20LV8ZD GAL20LV8D GAL20RA10 GAL20RA10B
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GAL16LV8C
GAL16LV8Z/ZD
GAL16LV8D
GAL16V8/A/B
GAL16V8C
GAL16V8D
GAL16V8Z
GAL16V8ZD
GAL16VP8B
GAL18V10
GAL20V8D
allpro 88
GAL16V8D
GAL20RA10
30B1
chiplab
gal16lv8c
GAL20V8C
GAL22V10D
ISPGAL22LV10
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2SK1195
Abstract: F1E23 POWER MOSFET N-Channel 230V
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 F1E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1195
F1E23
2-24V
2SK1195
F1E23
POWER MOSFET N-Channel 230V
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1195
F1E23
2-24V
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2SK1931
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1931 N-Channel Enhancement type OUTLINE DIMENSIONS F5E20 Case : E-pack (Unit : mm) 200V 5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1931
F5E20
2-24V
100ms
2SK1931
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2SK1194
Abstract: F05E23
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 F05E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1194
F05E23
2-24V
2SK1194
F05E23
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters
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2SK1194
F05E23
2-24V
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F05B23VR
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET F05B23VR N-Channel Enhancement type OUTLINE DIMENSIONS Case : B-pack Unit : mm 230V 0.5A FEATURES ●Applicable to 4V drive. ●The static Rds(on) is small. ●Built-in ZD for Gate Protection. APPLICATION ●DC/DC converters
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F05B23VR
2-24V
F05B23VR
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2SK1194
Abstract: POWER MOSFET N-Channel 230V F05E23 230V Mosfet
Text: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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2SK1194
F05E23
2-24V
2SK1194
POWER MOSFET N-Channel 230V
F05E23
230V Mosfet
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2SK1195
Abstract: F1E23 10V 1.5A MOSFET N-channel POWER MOSFET N-Channel 230V
Text: SHINDENGEN VR Series Power MOSFET 2SK1195 N-Channel Enhancement type OUTLINE DIMENSIONS F1E23 Case : E-pack (Unit : mm) 230V 1.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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2SK1195
F1E23
2-24V
2SK1195
F1E23
10V 1.5A MOSFET N-channel
POWER MOSFET N-Channel 230V
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2SK1931
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET 2SK1931 N-Channel Enhancement type OUTLINE DIMENSIONS F5E20 Case : E-pack (Unit : mm) 200V 5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters
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2SK1931
F5E20
2-24V
100ms
2SK1931
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F05B23VR
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET F05B23VR N-Channel Enhancement type OUTLINE DIMENSIONS Case : B-pack Unit : mm 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters Power supplies of DC 12-24V input
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F05B23VR
2-24V
F05B23VR
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F05B23VR
Abstract: No abstract text available
Text: SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS F05B23VR Case : B-pack Unit : mm 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters Power supplies of DC 12-24V input
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F05B23VR
2-24V
F05B23VR
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BU 647
Abstract: vfh 5a LDQ-2N3722RD-23726
Text: □ATE REVISIONS DRAWING NUMBER REV LDQ-2N3722RD-23726 D REV 8 -2 8 -9 6 E.C.N. #10234,/ A 1 1 -Ê -9 6 E.C.N. #10267./ B 1 0 -1 3 -9 7 E.C.N. #10BRDR./ C 1 2 -9 - 9 7 E.C.N. #10401/ D CHARACTERISTIC 5 GREEN RED RED PEAK COLOR WAVELENGTH\ fi35 505 633 ZD ZJ
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LDQ-2N3722RD-23726
830nm
585nm
2N3722RDâ
BU 647
vfh 5a
LDQ-2N3722RD-23726
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LQFP208
Abstract: SOT459 MS-026
Text: PDF: 2003 Mar 24 Philips Semiconductors Package outline LQFP208; plastic low profile quad flat package; 208 leads; body 28 x 28 x 1.4 mm SOT459-1 c y X A 105 156 157 104 ZE e E HE A 3 A A2 A1 wM θ Lp bp L detail X pin 1 index 208 53 1 52 v M A ZD wM bp
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LQFP208;
OT459-1
136E30
MS-026
LQFP208
SOT459
MS-026
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Untitled
Abstract: No abstract text available
Text: LOW -DROPOUT REGULATORS — H IG H EFFICIENCY co CO ZD o £ * > CC Q m O < Designed specifically to meet the requirement for extended opera tion of battery-powered equipment such as cordless and cellular tele phones, the A8405SLH voltage regulators offer the reduced dropout
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A8405SLH
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LQFP-208
Abstract: LQFP208
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline LQFP208; plastic low profile quad flat package; 208 leads; body 28 x 28 x 1.4 mm SOT459-1 c y X A 105 156 157 104 ZE e E HE A 3 A A2 A1 wM θ Lp bp L detail X pin 1 index 208 53 1 52 v M A ZD wM bp
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LQFP208;
OT459-1
OT459-1
30ine
LQFP-208
LQFP208
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LQFP208
Abstract: MS-026 LQFP-208
Text: PDF: 2000 Feb 14 Philips Semiconductors Package outline LQFP208; plastic low profile quad flat package; 208 leads; body 28 x 28 x 1.4 mm SOT459-1 c y X A 105 156 157 104 ZE e E HE A 3 A A2 A1 wM θ Lp bp L detail X pin 1 index 208 53 1 52 v M A ZD wM bp
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LQFP208;
OT459-1
136E30
MS-026
LQFP208
MS-026
LQFP-208
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