Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D727 BGY282 dual band UHF amplifier module for GSM900 and GSM1800 Preliminary specification 2001 Dec 11 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 PINNING - SOT632A
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M3D727
BGY282
GSM900
GSM1800
GSM900
BGY282
SCA73
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D727 BGY282 Dual band UHF amplifier module for GSM900 and GSM1800 Preliminary specification 2002 Feb 26 Philips Semiconductors Preliminary specification Dual band UHF amplifier module for GSM900 and GSM1800 BGY282 PINNING - SOT632A
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M3D727
BGY282
GSM900
GSM1800
GSM900
BGY282
SCA73
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BGY282
Abstract: ECEV1VA101P GSM1800 GSM900 v-band P925
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D727 BGY282 dual band UHF amplifier module for GSM900 and GSM1800 Preliminary specification 2001 Dec 04 Philips Semiconductors Preliminary specification dual band UHF amplifier module for GSM900 and GSM1800 BGY282 PINNING - SOT632A
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M3D727
BGY282
GSM900
GSM1800
OT632A
GSM900)
BGY282
ECEV1VA101P
GSM1800
v-band
P925
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MBL253
Abstract: P925 SMD Transistor z6 GSM1800 BGY282 ECEV1VA101P GSM900 v-band sot632
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D727 BGY282 Dual band UHF amplifier module for GSM900 and GSM1800 Preliminary specification 2002 Apr 9 Philips Semiconductors Preliminary specification Dual band UHF amplifier module for GSM900 and GSM1800 BGY282 PINNING - SOT632A
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M3D727
BGY282
GSM900
GSM1800
OT632A
GSM900)
MBL253
P925
SMD Transistor z6
GSM1800
BGY282
ECEV1VA101P
v-band
sot632
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Untitled
Abstract: No abstract text available
Text: Reference Design AC Power Switching Relay with ZAURA Control RD001901-1112 Overview This reference design integrates Zilog’s ZAURA RF 868 MHz Wireless Module onto an AC power switching relay designed to showcase the features and performance of a relaybased switch with AC voltage zero-crossing detection to minimize surge currents. This
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RD001901-1112
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smd y6 sot-23
Abstract: smd z17 smd transistor marking z11 component marking Y1 sot23 transistor smd z9 smd y4 sot-23 Z3 SMD sot 23 smd y12 SMD Transistor Y12 z14 smd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODE BZX84C2V4 to 75V SOT-23 Formed SMD Package 3 3 Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE 2 1 2 1 Low voltage general purpose voltage regulator diode
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BZX84C2V4
OT-23
C-120
060506E
smd y6 sot-23
smd z17
smd transistor marking z11
component marking Y1 sot23
transistor smd z9
smd y4 sot-23
Z3 SMD sot 23
smd y12
SMD Transistor Y12
z14 smd
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smd z17
Abstract: smd z12 transistor z14 smd transistor z15 smd z14 smd smd y6 sot-23 component marking Y1 sot23 diode smd y9 smd y4 sot-23 y9 smd diode
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODE BZX84C2V4 to 75V SOT-23 Formed SMD Package 3 3 Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE 2 1 2 1 Low voltage general purpose voltage regulator diode
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BZX84C2V4
OT-23
C-120
060506E
smd z17
smd z12
transistor z14 smd
transistor z15 smd
z14 smd
smd y6 sot-23
component marking Y1 sot23
diode smd y9
smd y4 sot-23
y9 smd diode
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y6 smd zener
Abstract: zener SMD W9 sot 23 185Z4 smd y6 sot-23 smd y4 sot-23 BZX84C3V3 bzx84-c3v3 SMD Transistor Y13 transistor z14 smd BZX84C3V6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODES BZX84C3V3 - 75V SSV 3 3 Pin Configuration SOT-23 Formed SMD Package 1 = ANODE 2 = NC 3 = CATHODE 2 1 2 1 Suited for Applications such as Cellular Phones, Hand Held Portables, and High Density PC Boards
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BZX84C3V3
OT-23
C-120
Rev240405E
y6 smd zener
zener SMD W9 sot 23
185Z4
smd y6 sot-23
smd y4 sot-23
bzx84-c3v3
SMD Transistor Y13
transistor z14 smd
BZX84C3V6
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diode zener smd z5
Abstract: y6 smd zener zener SMD W9 sot 23 smd y6 sot-23 z8 smd zener Diode zener smd z9 z14 smd zener SMD W9 bzx84c12 smd Z3 SMD sot 23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODES BZX84C3V3 - 82V SSV 3 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 2 1 Suited for Applications such as Cellular Phones, Hand Held Portables, and High Density PC Boards
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BZX84C3V3
OT-23
C-120
310505E
diode zener smd z5
y6 smd zener
zener SMD W9 sot 23
smd y6 sot-23
z8 smd zener
Diode zener smd z9
z14 smd
zener SMD W9
bzx84c12 smd
Z3 SMD sot 23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODE BZX84C2V4 to 75V SOT-23 Formed SMD Package 3 3 Pin Configurat ion 1 = A N ODE 2 = NC 3 = CATHODE 2 1 2 1 Low voltage general purpose voltage regulator diode
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BZX84C2V4
OT-23
C-120
060506E
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smd transistor M3 sot23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
smd transistor M3 sot23
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PD550
Abstract: arco 406 transistor SMD 520
Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55035
PD55035S
PowerSO-10RF.
PD550
arco 406
transistor SMD 520
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on 5297 transistor
Abstract: transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
on 5297 transistor
transistor c 5299
100B6R8CW
293D106X9035D
100B3R3BW
capacitor philips
motorola s 114-8
100B120GW
100B100GW
"capacitor philips"
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transistor J585
Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
transistor J585
transistor smd z8
Z9 TRANSISTOR SMD
transistor SMD Z2
BC847 smd
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transistor motorola 114-8
Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
transistor motorola 114-8
motorola s 114-8
Z9 TRANSISTOR SMD
transistor J585
smd wb1 transistor
smd wb1
motorola 114-8
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SMD MARKING A69
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW
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M3D088
BZX84
613514/03/pp11
SMD MARKING A69
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smd code Z70
Abstract: SMD MARKING CODE A20 smd transistor bzx84-c12 A13 MARKING CODE marking code y2 SMD Transistor smd code marking WV BZX84-C5V1, BZX84-B5V1, BZX84-A5V1 BZX84-B5V6 Z59 smd code z16 z67 smd
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW
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M3D088
BZX84
613514/03/pp11
smd code Z70
SMD MARKING CODE A20
smd transistor bzx84-c12
A13 MARKING CODE
marking code y2 SMD Transistor
smd code marking WV
BZX84-C5V1, BZX84-B5V1, BZX84-A5V1
BZX84-B5V6 Z59
smd code z16
z67 smd
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y2 smd diodes
Abstract: BZX84 BZX84-A2V4 BZX84-A2V7 BZX84-A3V0 BZX84-A3V3 BZX84-A3V6 BZX84-A75 smd code book z1 BZX84-A5V6
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification Voltage regulator diodes BZX84 series FEATURES PINNING
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M3D088
BZX84
c2003SCA75All
y2 smd diodes
BZX84-A2V4
BZX84-A2V7
BZX84-A3V0
BZX84-A3V3
BZX84-A3V6
BZX84-A75
smd code book z1
BZX84-A5V6
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smd transistor marking z3
Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090AR3
smd transistor marking z3
smd transistor marking j6
J585 mosfet
smd transistor marking z8
smd transistor z4
smd transistor marking mf
capacitor philips
Z9 TRANSISTOR SMD
J216
transistor 6 pin SMD Z2
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ee55 transformer
Abstract: No abstract text available
Text: 2. S c h e m a t i c : 1. Mechanical Dimensions: 0.Z50 Max 4 o- -O -0 2 PRI 6 o— 11— 0,010 Typ 3 3. E l e c t r i c a l -O SEC 1 S p e c ific atio n s: Turns Ratio: Pins 4 - 6 : ( 3 - 1 )=1:2C T ±1 % I — □ |-*— 0.073 □ D— ro p o 1500VAC, Wdg to Wdg
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OCR Scan
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MIL-STD-202G.
UL94V-0
E151556
1500VAC,
10KHz
100KHz
Apr-30-08
Apr-30-08
ee55 transformer
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Untitled
Abstract: No abstract text available
Text: 1. D im ensions: 2. S c h e m a tic : a 7 6 o XFMRS XF 2406 -OOSM 5 o o X o rv ^ r \ u Lf> o OO m l" ' tn ho □0 o CM ^ i-o d d • YYWW 1 2 3 4 3. E lectrical T u rn s S p ecification s: R a tio : 1 - 2 ) : ( 3 - 4 ) : ( S - 5 ) = 1 :1:1 OCL: Pins 1 - 4 Z40uH Typ 100KHz, 0.1V Tie2+3
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XF2406
Z40uH
100KHz,
L-STD-202G,
E151556
XF2406â
May-03-07
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FL 10-12
Abstract: p 2808 2808 XF0013W15
Text: 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C 1. M e c h a n ic a l D im e n s io n a : A 0.60 Max • D 0^4- 100 z T T ° M ax PRI OCL: 1.2mH Min @100KHz 50m V 7 H R R R R R XFMRS XF0013W 15 YYWW T T CW/W: 50pF Max @100KHz 50mV, Each coil o
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XF001I3W15
100KHz
10DKHz
E151556
-l-125
XF0013W15
FL 10-12
p 2808
2808
XF0013W15
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transistor smd z8
Abstract: 395C-01 RF NPN POWER TRANSISTOR C 10-50 GHZ lg smd transistor P1 ATC100a
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN S ilicon RF Pow er Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness,
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MRF6408
MRF6408PHT/D
MRF6408
IS12I
IS22I
transistor smd z8
395C-01
RF NPN POWER TRANSISTOR C 10-50 GHZ
lg smd transistor P1
ATC100a
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CS 20A RoHS
Abstract: No abstract text available
Text: 2. S c h e m a t ic : 1. M e c h a n ic a l D im e n s io n s : S e conda ry 0 .0 1 8 ± 0 .0 0 2 C 0 .2 5 0 Max E 0.100 XFMRS r> X F 0 1 9 6 2 -2 0 A • YYWW bV in 03 x CM 1 2 o □ 3 o u CM 6 O CQ K o o 4 P rim a ry 3. Electrical Specifications: Y Y jZ
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XF01962
MIL-STD-202G,
UL94V-0
E151556
102mm)
100KHz
3000Vac,
UL1950
May-14-07
CS 20A RoHS
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