ksd2046
Abstract: No abstract text available
Text: SDZ6V8F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ6V8F Marking Package Code Z5 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC
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OT-23F
KSD-2046-000
ksd2046
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Z5 SOT-23
Abstract: ksd2011
Text: SDZ6V8 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ6V8 Marking Package Code Z5 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1
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OT-23
KSD-2011-000
Z5 SOT-23
ksd2011
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MOELLER Z00 10
Abstract: dil3m80 ZEV-XSW-820 ZEV-XVK-20 DIL3AM85 EMT6DB DIL4M115 3AM85 SDAINL3M125 DIL4AM145
Text: Moeller HPL0211-2001/2002 06/001 Overload relays, motor-protective relays Technical overview Page 06/002 System overview 05/006 Overload relays, motor-protective relays ZE, Z00 overload relays Z1, Z5 overload relays ZW7 current transformer-operated overload relays
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HPL0211-2001/2002
ZEV-XSW-820
MOELLER Z00 10
dil3m80
ZEV-XSW-820
ZEV-XVK-20
DIL3AM85
EMT6DB
DIL4M115
3AM85
SDAINL3M125
DIL4AM145
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBZ5T1045-HF Reverse Voltage: 45 Volts Forward Current: 10 Amp RoHS Device Halogen free SMC Z5-T Features Top View - Lead less chip form, no lead damage. - Low power loss, High efficiency. Bottom View 0.183(4.65) 0.171(4.35)
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CDBZ5T1045-HF
MIL-STD-750,
QW-JB050
1045M
QW-JB051
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CDBZ5T1045-HF
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBZ5T1045-HF Reverse Voltage: 45 Volts Forward Current: 10 Amp RoHS Device Halogen free SMC Z5-T Features Top View - Lead less chip form, no lead damage. Bottom View 0.183(4.65) 0.171(4.35) 0.104(2.65) 0.093(2.35) - Low power loss, High efficiency.
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CDBZ5T1045-HF
MIL-STD-750,
QW-JB050
1045M
QW-JB051
CDBZ5T1045-HF
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBZ5T30100-HF Reverse Voltage: 100 Volts Forward Current: 30 Amp RoHS Device Halogen free SMC Z5-T Features Top View - Lead less chip form, no lead damage. Bottom View 0.183(4.65) 0.171(4.35) 0.104(2.65) 0.093(2.35) - Low power loss, High efficiency.
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CDBZ5T30100-HF
QW-JB051
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smd diode marking 78A
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBZ5T30100-HF Reverse Voltage: 100 Volts Forward Current: 30 Amp RoHS Device Halogen free SMC Z5-T Features Top View - Lead less chip form, no lead damage. Bottom View 0.183(4.65) 0.171(4.35) 0.104(2.65) 0.093(2.35) - Low power loss, High efficiency.
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CDBZ5T30100-HF
MIL-STD-750,
054MC
QW-JB051
smd diode marking 78A
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10nk60
Abstract: 10NK60Z power mosfet 200A
Text: STFI10NK60Z N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH Power MOSFET in I²PakFP Preliminary data Features Type VDSS RDS on max STFI10NK60Z 600 V < 0.75 Ω 10 A PTOT ID 35 W • Fully insulated and low profile package with increased creepage path from pin to heatsink
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STFI10NK60Z
10nk60
10NK60Z
power mosfet 200A
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VDD480
Abstract: 10NK60Z isd10 equivalent 10NK60
Text: STFI10NK60Z N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS RDS on max STFI10NK60Z 600 V < 0.75 Ω 10 A PTOT ID 35 W • Fully insulated and low profile package with
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STFI10NK60Z
O-281)
VDD480
10NK60Z
isd10 equivalent
10NK60
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freescale semiconductor body marking
Abstract: ML200C marking c5 Z3 marking
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
OT-89
freescale semiconductor body marking
ML200C
marking c5
Z3 marking
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
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ICA10
Abstract: YTS2907A 150fps
Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency
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YTS2907A
-500mA
fT-200MHz
YTS2222A
-500mA,
-50mA
Ta-25
-15mA
500mA,
-50mA
ICA10
YTS2907A
150fps
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V100SM8
Abstract: V12SM8 V18SM8 V22SM8 V27SM8 V33SM8 V39SM8 V47SM8 V56SM8 V68SM8
Text: G E SOLID STATE 01 Ô Ë J 3 Û 7 S D Û 1 OOILTBT 7 T T'//'Z5 SURFACE-MOUNT VARISTORS SM SERIES RATINGS AND CHARACTERISTICS TABLE: SM8 5 x 8mm (See page 9-30 for dimension drawing) SM8 SERIES (Equivalent to 7mm Radial) Device Marking V-(W V8SM8 V12SM8 V18SM8
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50fll
8/20/zs)
i0/100tyjs)
8/20jUs)
V12SM8
V180SM8
V200SM8
V220SM8
V240SM8
V270SM8
V100SM8
V18SM8
V22SM8
V27SM8
V33SM8
V39SM8
V47SM8
V56SM8
V68SM8
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VE09 2750
Abstract: VE07 2750 varistors ve07 2750 ve17 2750 0461K VE07 0600 ve09 0151 varistors ve09 2750 varistors ve07 VE17 0251
Text: THOMSON COMPONENTS THOMSON PASSIVE 4hE D • T0EÔ3QS D0003ÔÔ b ■THP VE SERIES EPOXY DIPPED ZINC OXIDE VARISTORS r-/;-z5 DIMENSIONS TYPE D max. mm ins. H max. mm ins. +10% -0.05 mm ins. E +0.8 mm ins. VE07 7 .276 10 .394 0.6 .024 5.08 .200 VE09 9 .354
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DD003Ã
E84108
175VRMS
VE13S
VE09 2750
VE07 2750
varistors ve07 2750
ve17 2750
0461K
VE07 0600
ve09 0151
varistors ve09 2750
varistors ve07
VE17 0251
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I-187
Abstract: No abstract text available
Text: CASE CURRENT FINISH AMPS SOLDER 5,0 WORKING VOLTAGE -55'C TO 4-85’C AC DC AC MAXIMUM VOLTAGE DROP MAXIMUM DC RESISTANCE (OHMS) -55‘C TO 4-1 Z5*C DC DC 150 125 AC MIN. INSERTION LOSS PER M IL - S TD - 220 , FULL LOAD, + 25'C 14 30 50 75 100 150 300 5 0 0
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150VDC
I-187
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Untitled
Abstract: No abstract text available
Text: f r o n t view c r o s s - s e c t io n : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : • f-f- f f f - f - r - f f - f - f - f - f - T f T + f - T - f - f f - r r f f f - f - f - f - r f f - f - f - f f i Arrangement I S =405 88x[Z5]= 220
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SDA-85I0G
P5-85I--
SDA-85301-0103
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Untitled
Abstract: No abstract text available
Text: •K ? u a if f lu 'J ijg i S \ j! a ^ iiu ia v a ^ K a / a «g»-iTC H *g« 4 \ P \ B , 15 5 6 7 B 9 10 II IZ 13 14 15 16 17 IS lO ty a jO i i CH j Q i K a (* . 19 Z0 21 ZZ Z3 Z4 Z5 Z6 Z7 Z8 Z9 30 31 3Z 33 34 35 36 37 31 39 .M 3 36 x r z 5 > 90 - 0 I Standard contact after installation to PC board
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SDA-85105-4658
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Untitled
Abstract: No abstract text available
Text: •K ? u a i f f l u ' J i j g i S \ j ! a ^ i i u i a v a ^ K a / a «g»-iTCH*g« 4 \ P \ B, 15 .M 5 6 7 B 9 10 II IZ 13 14 15 16 17 IS 19 Z0 21 ZZ Z3 l O t y a j O i i CH j Q i Z4 Z5 Z6 Z7 Z8 Z9 30 31 3Z 33 34 Ka 35 36 37 31 (* . 39 3 36 x r z 5 > 90
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SDA-85105-4593
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gaa 816
Abstract: No abstract text available
Text: M Z 5 8 0 6 thru M Z5891 and M Z5210 thru M Z5240 MicrosemiCorp. ' The choóe e x p e lís SANTA ANA, CA For more information call: 714 979-8220 FEATURES GLASS ZENER DIODES • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION
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Z5891
Z5210
Z5240
MZ5806
MZ5891,
MZ5210
MZ5240
gaa 816
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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BZX 5V6
Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
Text: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)
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CB-166
OT-23)
55-C11
BZX 5V6
BZX 9V1
BZX 4V7
BZX 6v8
bzx 8v2
8v2 BZX
15 BZX
BZX -2V5
bZX equivalent
BZX 2.7 v
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BS9365
Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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BFS36
2N930
BS9365
BAW63
BS9302
BFS36A
2N929
BAW63A
f025
BAW68
marking Z9
F008
BZX88-C5V1
2N2475
BFS46A
BZX88-C5V6
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sot23 transistor marking y2
Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0
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OT-23
OT-23
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
BZX84C4V3
MMBZ5230
BZX84C4V7
MMBZ5231
sot23 transistor marking y2
BZXB4C10
marking 8A sot-23
y2 sot23
marking y1 sot-23
transistor marking w9
8c SOT 23
8y transistor
marking 62. SOT23
TRANSISTOR MARKING YB
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5AW diode
Abstract: KWS10-15 KWS10-5 12v zener diode LAMBDA over Voltage CSA234 CSA950 KWS5-12 KWS5-15 KWS105
Text: KWS-SERIES UMBDAA DENSEI-LAMBDA Single output 5W ~15W AC-DC on-board type power supply Model name KWS 5-5 1- Nomina! output voltage Nomina! output power Name ol series • Features • C€ marking Low Voltage Directive C€ (Low Voltage Directive)
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265VAC
440Hz)
-340VDC
KWS5-15
KWS10-5
KWS10
KWS10-12
KWS10-15
KWS15-5
5AW diode
12v zener diode
LAMBDA over Voltage
CSA234
CSA950
KWS5-12
KWS105
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