"Indicator Lamps"
Abstract: 85122 LED water level indicator using 4 led LED NIGHT LAMP CIRCUIT Indicator Lamps mil grade LED lamps Oxley Group str 1229 2STR/LH23 night vision led
Text: LED Characteristics Product Selection Chart z OXL/MIL50/- 5.0 67 z z z z z z OXL/CLH/63/- 6.35 66 z z z OXL/CLH/63/P/- 6.35 66 z z z PS/LH/8/- 8.0 68 z z z z STR/LH/8/- 8.0 68 z z z z z STR/5/LH/8/- 8.0 68 z STR/501/LH/8/- 8.0 68 z STR/NLH/- 8.0 68 OXL/CLH/80/-
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OXL/CLH/63/-
OXL/CLH/63/P/-
STR/501/LH/8/-
OXL/CLH/80/-
STR/LH23/10/-
2STR/LH23/10/-
3STR/LH23/10/-
OXL/CLH/100/-
OXL/CLH/100/P/-
OXL/MIL50/-
"Indicator Lamps"
85122 LED
water level indicator using 4 led
LED NIGHT LAMP CIRCUIT
Indicator Lamps
mil grade LED lamps
Oxley Group
str 1229
2STR/LH23
night vision led
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crystal 27 hc52
Abstract: QUARTZ hc52 71-XX
Text: HC-52/U Quartz Crystal Units AT-Cut, 5 - 300 MHz Options Package Height: 8.0 3.8 X HC - 5 2 / U: 8.8 HC - 5 2 / 8 mm: 8.0 HC - 5 2 / 6 mm: 6.0 Z Y 7.0 Y 2.3 2.3 2.3 Z 3.3 3.3 3.3 Adder to PartNr. XS 71xxA XS 71xxB HC - 5 2 / 6 mm: starting with 15MHz X DIN 45110:
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HC-52/U
71xxA
71xxB
15MHz
MIL-H-10056:
50ppm
300MHz:
D-74922
crystal 27 hc52
QUARTZ hc52
71-XX
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k2952
Abstract: 2SK2952
Text: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Unit: mm Chopper Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current
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2SK2952
k2952
2SK2952
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω
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E E Elektronik GmbH
Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω
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k2845
Abstract: No abstract text available
Text: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance
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2SK2845
SC-64
k2845
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K2841
Abstract: 2-10P1B 2SK2841
Text: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.)
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2SK2841
K2841
2-10P1B
2SK2841
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Untitled
Abstract: No abstract text available
Text: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.)
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2SK2841
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Untitled
Abstract: No abstract text available
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)
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2SK2733
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2-10P1B
Abstract: 2SK2733 K2733
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)
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2SK2733
2-10P1B
2SK2733
K2733
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ixzr08n120a
Abstract: No abstract text available
Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on
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IXZR08N120
IXZR08N120A/B
dsIXZR08N120A/B
ixzr08n120a
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2SK2493
Abstract: K2493
Text: 2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2493 Chopper Regulator and DC−DC Converter Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 16 V) z Enhancement mode
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2SK2493
2SK2493
K2493
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Untitled
Abstract: No abstract text available
Text: Monolithic crystal filter MQF21.4-1600/04 Application • 8 pol filter • i.f.- filter • use in mobile and stationary transceivers Characterstics Pass band Unit Value MHz dB kHz dB dB dB 21.4 ≤ 3.5 ± 8.0 ≤ 2.0 ≥ 70 > 90 Terminating impedance Z R1 | C1
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MQF21
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MQF70
Abstract: No abstract text available
Text: Monolithic crystal filter MQF70.0-1000/08 Application • 6 pol filter • i.f.- filter • use in mobile and stationary transceivers Characterstics Pass band Unit Value MHz dB kHz dB dB dB dB 70.0 ≤ 8.0 ± 5.00 ≤ 1.0 ≥ 60 > 60 > 50 Terminating impedance Z
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MQF70
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1S2075
Abstract: Hitachi DSA0045
Text: 1S2075 K Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144C (Z) Rev.3 Dec. 2000 Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information
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1S2075
ADE-208-144C
DO-35
Hitachi DSA0045
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HA 12058
Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
HA 12058
TRANSISTOR CD 2897
L22A
HA 3089
ic 7492 series
TRANSISTOR 2SC 458
2SC 968 NPN Transistor
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MS6511
Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111
Text: 65 SCHOTTKY DIODES PART NUMBER 4 z |F fi NF (db) TEST F R EQ UENC Y VSWR MICROWAVE M IXER DIODES MS5111 MS5121 MS5131 8.0 7.5 7.0 150 300 150-300 150-300 2.3:1 2.3:1 2.0:1 MS5141 MS5151 MS5211 6.5 6.0 8.0 150-300 150-300 150 300 1.8:1 1.5:1 2.3:1 MS5221
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MS5111
MS5121
MS5131
MS5141
MS5151
MS5211
MS5221
MS5231
MS5241
MS5251
MS6511
Microwave detector diodes 18 GHz
Microwave detector diodes
MS5531
MS5211
MS5321
MS6111
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Untitled
Abstract: No abstract text available
Text: 3 DB 90° COUPLERS, HYBRID SERIES QH WITH SMA OR N CONNECTORS 25 MHz TO 18 GHz GENERAL SPECIFICATIONS Frequency Range: 2 5 .0 M H z to 1 8.0 G H z RF Impedance 50 O HM S Temperature Information: O p erating tem p erature from - 5 5 ° to + 8 5 °C . Connectors:
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0H-17
QH-20
QH-21
QH-23
QH-26
QH-28
QH-31
QH-33
QH-36
QH-43
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Untitled
Abstract: No abstract text available
Text: SIEMENS low po w er SBL51214G/N/Z SBM51214G/N/Z MEDIUM POWER 1300/1300 nm BIDI Transceiver Optical Module Dim ensions in inches mm .676 (17.2) .597(15.2) spacing .1 (2.54) max 0 .236 (6.0) ffl« ss -KJ— m .365 (9.3) .314(8.0) .806 (20.5) 1(17.5) 1.41 (36.0)
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SBL51214G/N/Z
SBM51214G/N/Z
SBL51214G
SBM51214G
SBL51214N
SBM51214N
SBL51214Z
SBM51214Z
SBL/M51214N/Z
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vhf fm receiver
Abstract: fm modulator vhf fm receiver mc3361 Wideband FM Modulator MC3361 audio transmitter Motorola MC1376 MC3359 squelch TRANSMITTER motorola mc 1376 MC3362 MC3361 tuner
Text: CONSUMER AND AUTOMOTIVE APPLICATIONS continued Radio Communication, Cordless Telephone, Pager & Citizenband FM-IF Receiver Recovered Audio output f = ± 75KHz mV (RMS) Power Supply Volts Max Case Type 50 350 (f = ±3.0K H z) 8.0 648 MC3357 2.0 40 700 12
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75KHz
MC3357
MC3359
MC3361
TDA1062S.
MC13062
MC2831A
MC13055
vhf fm receiver
fm modulator
vhf fm receiver mc3361
Wideband FM Modulator
MC3361 audio transmitter
Motorola MC1376
MC3359 squelch
TRANSMITTER motorola mc 1376
MC3362
MC3361 tuner
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