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    Z 40 MOSFET Search Results

    Z 40 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    Z 40 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Liteon Semiconductor Corporation LSP3172 Wide Input 2.5A Step Down DC/DC Converter „ FEATURES z 2.5A Output Current z Up to 95% Efficiency z 7V to 30V Input Range z 40µA Shutdown Supply Current z 400kHz Switching Frequency z Adjustable Output Voltage z Cycle-by-Cycle Current Limit Protection


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    LSP3172 400kHz LSP3172 050TYP. PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 60 A C2M0040120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    C2M0040120D O-247-3 C2M0040mplanted C2M0040120D PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 60 A CPM2-1200-0040B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 40 mΩ N-Channel Enhancement Mode Features • • • • • Chip Outline High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CPM2-1200-0040B CPM2-1200-0040B PDF

    H100

    Abstract: SML40EUZ06JD 600v 40A ultra fast recovery diode diode H48
    Text: SML40EUZ06JD SEME LAB SOT-227 Package 1- Cathode 2 Enhanced Ultrafast Recovery Diode 600 Volt, 2 x 40 Amp 2- Anode 2 TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 4 0 E U Z 0 6 JD diode features a triple charge control action utilising


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    SML40EUZ06JD OT-227 H100 SML40EUZ06JD 600v 40A ultra fast recovery diode diode H48 PDF

    SSRDC100DC40

    Abstract: pyrometers SSRDC200DC12 soil "electrical conductivity" C9032 omega solid state relay
    Text: Solid State Relays Vdc Input/Vdc Output SSRDC200DC12 Series $ 56 Need More Info? Basic Unit See Technical Article on Solid State Relays in Section Z ߜ Controls up to 40 Amp @ 100 Vdc or 12 Amp @ 200 Vdc ߜ Advanced Semiconductor Technology ߜ Low On-State


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    SSRDC200DC12 1-888-TC-OMEGA SSRDC100DC40 pyrometers soil "electrical conductivity" C9032 omega solid state relay PDF

    Untitled

    Abstract: No abstract text available
    Text: Solid State Relays Vdc Input/Vdc Output SSRDC200DC12 Series $ 56 Need More Info? Basic Unit See Technical Article on Solid State Relays in Section Z ߜ Controls up to 40 Amp @ 100 Vdc or 12 Amp @ 200 Vdc ߜ Advanced Semiconductor Technology ߜ Low On-State


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    SSRDC200DC12 P-162 PDF

    diode H48

    Abstract: 48 VOLT 150 AMP smps 600v 40A ultra fast recovery diode H100 SML40SUZ06JD h48 switching diode h48 diode
    Text: SML40SUZ06JD SEME LAB Ultrafast Recovery Diode 600 Volt, 2 x 40 Amp SOT-227 Package 1- Cathode 2 2- Anode 2 TECHNOLOGY The planar passivated and standard ultrafast recovery SML 4 0 S U Z 0 6 JD diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


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    SML40SUZ06JD OT-227 diode H48 48 VOLT 150 AMP smps 600v 40A ultra fast recovery diode H100 SML40SUZ06JD h48 switching diode h48 diode PDF

    3x2 DFN

    Abstract: amplifier DFN 2x2 DFN14 3x3 LTC3824MP msop-16 MSOP-18 LT3680H LTC2481H LT3724MP LTC3589
    Text: Selected High Temperature H - Grade Products Industrial Amplifiers High Speed Amplifiers 100% QA electrical tested at hot and sample tested at cold to datasheet z test limits to guarantee performance at temperatures ranging from -40°C to +150°C (or as specified in datasheet). For detailed information on H grade flow please go to http://www.linear.com/hgradeflow/.


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    LT1397H LT1994H LT6205H LT6350H LTC6246H/LTC6247H/LTC6248H LTC6404H LT1490AH/LT1491AH LT1494H/LT1495H/LT1496H LT1498H/LT1499H LT1630H 3x2 DFN amplifier DFN 2x2 DFN14 3x3 LTC3824MP msop-16 MSOP-18 LT3680H LTC2481H LT3724MP LTC3589 PDF

    2 ic 4440 amplifier input output

    Abstract: ic cs209 TRANSISTOR REPLACEMENT GUIDE FET CS209 IC Replacement CS8190 TRANSISTOR REPLACEMENT GUIDE darlington array with clamp diode 2A CS387 CS8190 NCV7001 application note
    Text: Automotive Analog Products Guide from ON Semiconductor Over Temperature B,C,D, S,Z • • • 74 V F,G,H, M,Q,W • • • 60 V K,T • • • 60 V S − • • • 60 V S − − • • • 60 V S 100 mA 1.0 V Typ 350 µA • 40 V Q,W 100 mA 0.6 V


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    CS8151 CS8221 CS8311 CS9201 CS9202 MC33160 NCV2931 ONS81498-2 SGD516/D 2 ic 4440 amplifier input output ic cs209 TRANSISTOR REPLACEMENT GUIDE FET CS209 IC Replacement CS8190 TRANSISTOR REPLACEMENT GUIDE darlington array with clamp diode 2A CS387 CS8190 NCV7001 application note PDF

    Untitled

    Abstract: No abstract text available
    Text: SML40EUZ06B MECHANICAL DATA Dimensions in mm inches Enhanced Ultrafast Recovery Diode 600 Volt, 40 Amp T O -2 4 7 P a c k a g e B a c k TECHNOLOGY o f C a s e C a th o d e S M L 4 0 E U Z 0 6 B 1 BENEFITS • Very fast recovery for low switching losses - C a th o d e


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    SML40EUZ06B PDF

    Untitled

    Abstract: No abstract text available
    Text: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^


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    SK60MH60 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    RT9701 RT9701 OT-23-5) OT-23-5 DS9701-12T00 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    RT9701 RT9701 OT-23-5) OT-23-5 DS9701-10 PDF

    NEC 2561A

    Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
    Text: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.


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    NEPOC-OC-DO20051 NEC 2561A nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    RT9701 RT9701 OT-23-5) OT-23-5 DS9701-14 PDF

    RT9701

    Abstract: RT9701CB RT9701CBL
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    RT9701 RT9701 OT-23-5) OT-23-5 DS9701-13 RT9701CB RT9701CBL PDF

    IXFN80N60

    Abstract: IXFN80N60P3
    Text: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    IXFN80N60P3 250ns E153432 80N60P3 IXFN80N60 IXFN80N60P3 PDF

    3N190

    Abstract: TO-99 3N165 3N166 3N191 ITC5911 ITC5912
    Text: HARRIS SEMICOND SECTOR 4 3 0 2 2 7 1 0 0 1 5 7 G 3 .4 27 E D IHAS -3/-Z Differential Amplifiers Continued 5 V'T-Z7-Z£ Junction FETs — N-Channel (Continued) PART NUMBER ITC5911 ITC5912 Vqs1-2 aVGS mV MV/°C PACKAGE Max Max TO-99 TO-99 10 15 20 40 •g


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    G01S7G3 ITC5911 ITC5912 10kHz 3N165 3N190 TO-99 3N166 3N191 PDF

    CRYDOM D40-1

    Abstract: crydom d40
    Text: CRYDOM CO 31E D • 2SM2S37 □□□Üb34 1 «CRY T ^ Z 5 -3 t CRYSOM BULLETIN803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability


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    2SM2S37 AP3151-1037) CRYDOM D40-1 crydom d40 PDF

    crydom series cy

    Abstract: Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07
    Text: CRYDOM CO 31E T> • 2542537 OOOGbSH 1 ■ CRY -p Z 5 -3 i CPY3QM BULLETIN 803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability High Surge Ratings


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    30DF1 A115A 30DF2 A115B A115D A115E AP3151-1037) crydom series cy Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07 PDF

    Untitled

    Abstract: No abstract text available
    Text: r Z 7 SGS-THOMSON Ä T # RäDSlRi i[Liera®[i!lDS$ STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R d S o ii Id S T P 4 0 N E 0 3 L -2 0 30 V < 0 .0 2 0 Q. 40 A . . . . TYPICAL RDs(on) = 0.014 £1 EXC EPTIO N AL dv/dt CAPABILITY


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    STP40NE03L-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIE D • Ô13bb71 DGOBSöb 1SÖ m S Z K G s e m ik Roim SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions 1 Rgs = 20 k fl AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 48


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    13bb71 SKM151 fll3bb71 T-39-15 PDF

    VIPer30

    Abstract: No abstract text available
    Text: VIPer20B VIPer20BSP SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V V IP e r2 0 B /S P dss 40 0V In RDS on 1.3 A 8 .7 Q. FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP T0200KH Z . CURRENT MODE CONTROL . SOFT START AND SHUT DOWN CONTROL . AUTOMATIC BURST MODE OPERATION IN


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    VIPer20B VIPer20BSP T0200KH SO-10 VIPer20Bâ PowerSO-10 VIPer30 PDF

    GA-32

    Abstract: CA3240AE1 GA3240 ca3240 application circuit ca3240
    Text: CA3240, CA3240A ¡1 } H a r r i s S E M I C O N D U C T O R w 7 m w Du a l, 4 . 5 M H z , B i M O S O p e r a t i o n a l A m p l i f i e r with M O S F E T I n p u t / B i p o l a r O u t p u t November 1996 Features Description • D u a l V e rs io n o f C A31 40


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    CA3240, CA3240A CA3240A CA3240 CA3140 1N914 GA-32 CA3240AE1 GA3240 ca3240 application circuit PDF