Untitled
Abstract: No abstract text available
Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization
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BF1216
BF1216
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bf1216
Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization
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BF1216
BF1216
OT363
Dual Gate MOSFET graphs
dual gate mosfet in vhf amplifier
SC-88 M5t
transistor M5W
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br 8764
Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1214
BF1214
OT363
br 8764
marking 822 sot363
6710 mosfet
sp 9753
sc 6700
N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
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Low Capacitance MOS FET 13005
Abstract: BF1205C
Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
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BF1205C
BF1205C
OT363
Low Capacitance MOS FET 13005
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Low Capacitance MOS FET 13005
Abstract: GL 7815 13005 equivalent internal transistor 13005 transistor 13005 CIRCUIT 13005 13005 TRANSISTOR A1 marking code amplifier marking code 718 sot363 BF1205C
Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 01 — 18 May 2004 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
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BF1205C
BF1205C
OT363
Low Capacitance MOS FET 13005
GL 7815
13005 equivalent internal
transistor 13005
transistor 13005 CIRCUIT
13005
13005 TRANSISTOR
A1 marking code amplifier
marking code 718 sot363
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PHILIPS MOSFET MARKING
Abstract: BF1208 dual gate mosfet in vhf amplifier Dual-Gate Mosfet marking G2 900 v 6 amp mosfet datasheet mosfet cross reference mosfet marking code gg UHF transistor handbook
Text: BF1208 Dual N-channel dual gate MOSFET Rev. 01 — 16 March 2005 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
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BF1208
BF1208
OT666
PHILIPS MOSFET MARKING
dual gate mosfet in vhf amplifier
Dual-Gate Mosfet
marking G2
900 v 6 amp mosfet datasheet
mosfet cross reference
mosfet marking code gg
UHF transistor handbook
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br 8764
Abstract: 13-AMPLIFIER BF1210
Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1210
BF1210
OT363
br 8764
13-AMPLIFIER
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097.176
Abstract: bs 3676 BF1208D b4102
Text: BF1208D Dual N-channel dual gate MOSFET Rev. 01 — 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
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BF1208D
BF1208D
OT666
097.176
bs 3676
b4102
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transistor 341 20P
Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1206
OT363
SCA75
20p/01/pp21
transistor 341 20P
marking sot363 20p
UHF Dual Gate
uhf vhf amplifier
dual-gate
dual gate fet
FET MARKING CODE
FET marking codes
FET Spec sheet
marking 865 amplifier
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00941
Abstract: BF1205
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1205
OT363
SCA75
R77/01/pp24
00941
BF1205
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K 2611 MOSFET
Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
Text: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1206F
BF1206F
OT666
K 2611 MOSFET
K 2611 MOSFET VOLTAGE RATING
mosFET K 2611
9439 2n
Shortform Data and Cross References Mosfet
UHF transistor handbook
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Untitled
Abstract: No abstract text available
Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
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OT363
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BF1208
Abstract: transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810
Text: 66 SO T6 BF1208 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
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BF1208
BF1208
OT666
transistor BF1208 Dual N-channel dual gate MOSFET
MARKING CODE 2l
mosfet 7810
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Untitled
Abstract: No abstract text available
Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
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BF1207
Abstract: No abstract text available
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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OT363
MSC895
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AN 7591 POWER AMPLIFIER
Abstract: an 7591 BF1206 an 7591 power amp dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1206
OT363
R77/01/pp22
AN 7591 POWER AMPLIFIER
an 7591
BF1206
an 7591 power amp
dual-gate
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BF1208
Abstract: No abstract text available
Text: SO T6 66 BF1208 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
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OT666
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00941
Abstract: dual gate fet BF1205 mosfet handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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MBD128
BF1205
OT363
R77/01/pp25
00941
dual gate fet
BF1205
mosfet handbook
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
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OT363
R77/01/pp22
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Untitled
Abstract: No abstract text available
Text: BF1218 Dual N-channel dual gate MOSFET Rev. 01 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
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OT363
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MOSFET 7121
Abstract: 9935 mosfet
Text: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
OT343R
MOSFET 7121
9935 mosfet
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bf1218
Abstract: A1 marking code amplifier dual gate mosfet in vhf amplifier reference table n mosfet TRANSISTOR C 2577
Text: BF1218 Dual N-channel dual gate MOSFET Rev. 01 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
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OT363
A1 marking code amplifier
dual gate mosfet in vhf amplifier
reference table n mosfet
TRANSISTOR C 2577
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BF1212R datasheet
Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
SCA75
R77/02/pp15
BF1212R datasheet
BF121
BF1212
BF1212R
BF1212WR
dual-gate
marking CODE ML
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semikron skt 140
Abstract: SKT110F SKT140F E3060 semikron skt140 SKT110F10DU SKT140F12DV SKT140F10DU SKT110F12D SKT110F12DT
Text: 1SE D I fll3bfa?l Q001571 S I SEMIKRON INC SEMIKRON - T - 2 .S - Itrm s m axim um values for continuous operation V drm 240 A V rrm (Tvj = 125°C) V US 600 20 SKT110F06DT 800 20 SKT110F08DT 1000 25 30 SKT110F10DU SKT110F10DV 20 SKT110F12DT* SKT110F12DU 1200
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OCR Scan
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Q001571
SKT110F06DT
SKT140F06DT
SKT110F08DT
SKT110F10DU
SKT140F10DU
SKT110F10DV
SKT110F12DT*
SKT110F12DU
SKT140F12DU
semikron skt 140
SKT110F
SKT140F
E3060
semikron skt140
SKT140F12DV
SKT140F10DU
SKT110F12D
SKT110F12DT
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