YR YF TRANSISTOR Search Results

Contextual Info: Vishay Telefunken Physical Explanations AQL Acceptable Quality Level see chapter “Quality Data” B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different

yr yf transistor

Abstract: ITT Intermetall
Contextual Info: Technical Information Index of Symbols b bf bi bo br B Bq C Ci Co CcBO C EBO Ciss Cr E f fr F Fc g 9f 9i 9m 9o 9r 9s GC GP Gpav Gp max Gy h hf hi h0 hr hFE Iß Ibm Ibi >B2 !c !c a v leso !c e o !c e r 6 Imaginary part of y-Parameters Imaginary part of forward

QS 100 NPN Transistor

Abstract: KSC1393 transistor revers characteristic j001 samsung tv
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC1393 14E J| GOOböflS fl | T ~ 3 /~ /J NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC • High Current Gain Bandwidth Product fT=700MHz (iyp) • Low Noise Figure NF=3.0dB (Max) at f=200MHz • Low Reverse Transfer Capacitance Cre=0.5pF (Max)

3sk73

Abstract: SK192A 2SK241
Contextual Info: 2. GAIN AND STABILITY F igure 2.1 show s the basic high-frequency am ­ p lification circu it o f a transistor/F E T and its equiva­ len t circuit. W hen this am plification circ u it is tuned to the c en ter frequency, the capacitance is rem oved and only the conductance rem ains as show n in the

Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage

BF 234 transistor

Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Contextual Info: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz

2SK163

Abstract: nec 2sk163 2SK163 TO92 transistor 2sk163 2sk163 transistor 2sk163 nec transistor et 454 transistor S67 dh 0734 "2SK163"
Contextual Info: NEC J u n c t io n F ie ld E ffe ct T r a n s is t o r 2SK163 N-Channel Silicon Junction Field Effect Transistor Audio Frequency Low Noise Amplifier PACKAGE DIMENSIONS t t f t / FEATURES U n i t : mm o e n= 1 . 3 n V / / H 7 M H ig h E , VpsxèSO V T Y P .

KTC3193

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe=30dB Typ. (f=10.7MHz). • Recommended for FM IF, OSC Stage and AM CONV, IF Stage. MAXIMUM RATINGS (Ta=25°C)

KTC3193

Contextual Info: SEMICONDUCTOR T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe=30dB Typ. (f=10.7MHz). • Recommended for FM IF, OSC Stage and AM CONY, IF Stage.

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

Common collector configuration basic

Abstract: transistor Common emitter configuration NF50 yr yf transistor photo thyristor oscillator tunnel diode
Contextual Info: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function

diode tunnel

Abstract: NF50 Common collector configuration basic rs gp germanium diode
Contextual Info: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material F Function

2SC1009A

Abstract: CIL 108
Contextual Info: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.

transistor c 1923

Abstract: 2SC1923-0 sc1923 2sc 1203 PF751 2SC1923R C1923 2SC1923O transistor A05 2SC19230/3772
Contextual Info: ì / U D y N P N X t i9 * 5 / 7 > l, 7 ls - ? & h 7 y 5 J Z S ! , SILICON NPN EPITAXIAL PLANAR TRANSISTOR o FM R P , M I X , I P o FM T u n e r  2 SC 1923 iflfilffl and High F r eq u e n c y A m plifier Appli c a tio n s • ; Cr e = 0 i 7 0 p F Typ.)

mem637

Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
Contextual Info: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M

list of transistor

Abstract: dual-gate sr 160 DIODE Equivalent list
Contextual Info: [II] EXPLANATION OF HIGH-FREQUENCY CHARACTERISTICS 1. H IG H -FR E Q U E N C Y T R A N SIST O R PA R A M E T E R ex ten t of signals am plitude to be handled. E quivalent p a ra m eters o f a tra n sisto r in ­ E quivalent circu its have been developed

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

cil pnp smd

Abstract: smd transistor yf smd transistor fj npn smd transistor FY transistor smd JR VR313 transistor smd ztf 2SC4669 TE5S M55S
Contextual Info: Power Transistor n PNP t #jf+j:&m OUTLINE DIMENSIONS Case 1 E-pack 2SAl795 I-,_ 1:; : i ; -1 “5y;.5. o ] 4 -4OV -5A I’ll1 st> le 1 : J-he 2 : 3 : blmlttc~r 4 : colltTtol ;@i!Z RATINGS Q$Az$j$ 4 Absolute Maximum Ratings rl =1 CiL rj11 < ;,a fC$ I+ iii-

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

AM3526

Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
Contextual Info: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

Contextual Info: POWER RF MOSFET TRANSISTORS POLYFET RF DEVICES 1. Basic Considerations 1.1. Use a Printed Circuit Board - In most cases superior and more repeatable performance can be obtained using a printed circuit board with stripline inductors. It is also easier to maintain a good ground plane around the transistor.

BU43FVE

Abstract: BU4338 BU4210
Contextual Info: Datasheet Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42□□G series, BU42□□F series, BU42□□FVE series, BU43□□G series, BU43□□F series, BU43□□FVE series ●General Description ROHM CMOS reset IC series with adjustable output

Contextual Info: TECHNICAL NOTE Voltage Detector IC Series Low Voltage Free Delay Time Setting CMOS Voltage Detector IC Series BU42□□G/F/FVE，BU43□□G/F/FVE Series ●General Description ROHM CMOS reset IC series with adjustable output delay is a high-accuracy low current consumption reset IC series with a