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    YR 25A Search Results

    YR 25A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR25RM-12D#B01 Renesas Electronics Corporation 600V - 25A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR25RM-12D#B00 Renesas Electronics Corporation 600V - 25A - Thyristor Medium Power Use Visit Renesas Electronics Corporation
    RJU60C6SDPQ-A0#T2 Renesas Electronics Corporation 600V - 25A - Single Diode Fast Recovery Diode Visit Renesas Electronics Corporation
    BCR25RM-12LB#B00 Renesas Electronics Corporation 600V - 25A - Triac Medium Power Use Visit Renesas Electronics Corporation
    ISL8270MBIRZ-T Renesas Electronics Corporation Digital DC/DC PMBus 25A Module Visit Renesas Electronics Corporation
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    YR 25A Price and Stock

    Essentra Components CASNYR25A

    4IN NOM RIGID HVY DTY CASTER:NYL
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    DigiKey CASNYR25A Bulk
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    Texas Instruments SN74LVC125ARGYR

    Buffers & Line Drivers Tri-State Quad Bus
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    Mouser Electronics SN74LVC125ARGYR 40,976
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    Texas Instruments SN74LV125AQRGYRQ1

    Buffers & Line Drivers AC Quad Bus Bfr Gate
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    Mouser Electronics SN74LV125AQRGYRQ1 3,023
    • 1 $0.42
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    Texas Instruments SN74LV125ATRGYR

    Buffers & Line Drivers Quad Bus Buffer Gate
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    Mouser Electronics SN74LV125ATRGYR 2,928
    • 1 $0.32
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    Texas Instruments SN74LV125ARGYRG4

    Buffers & Line Drivers Quad Bus Buff Gate With 3-State Outputs
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    Mouser Electronics SN74LV125ARGYRG4 2,775
    • 1 $0.37
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    YR 25A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B1238

    Abstract: axc3 capacitor duty type contactor 240v 12v transformer 4560d axc1 mte contactor mte axc1
    Text: Issued November 1991 B12384 Heating and lighting contactors Features l Four ratings available, 25A, 45A, 80A and 100A AC1 , all with 240V, 50Hz coils l Suitable for switching heating and lighting loads l 25A and 45A contactors have 4 main poles, 80A and 100A contactors have 3 main poles


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    PDF B12384 660Vac 240Vdc B1238 axc3 capacitor duty type contactor 240v 12v transformer 4560d axc1 mte contactor mte axc1

    Untitled

    Abstract: No abstract text available
    Text: XC฀Series฀Battery฀Chargers฀ 12V฀&฀24V 15,฀25,฀30฀and฀50A฀ Smart฀Chargers ฀


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    p41c

    Abstract: P41S DS-401A P4-4S BADA-1000 DC250V distance between screws on PCB BAA1000 sp 1828 14M4
    Text: 警報用ヒューズホルダ Fuseholders P•PL ヒューズホルダ Fuseholder 2形 Type2 1形 Type1 •パネル取付タイプ Panel mounting type 安全規格:UL file # 64205 P4「」 S(はんだ付け接続) Solder wiring connection ●P:黒 BlackPL:茶 Brown


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    SA301B

    Abstract: SA-301B BAA1000 302B DC250V DS-401A SA-302B marking ac2
    Text: 警報用ヒューズ・ホルダ Fuseholders P•PL ヒューズホルダ Fuseholder P3受口はP3形ヒューズ用 P4受口はP4形ヒューズ用 P3 fuse holders are for type-P3 fuses. P4 fuse holders are for type-P4 fuses. •パネル取付タイプ Panel mounting type


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    M28861

    Abstract: MIL-PRF-28861 Pi filter array design conductive polymer capacitor mil std emi ferrite pi filter conductive polymer mil std gold capacitor
    Text: Solder-in Style EMI Filter AVX solder-in style C and L section filters, utilize patented conductive polymer technology to provide effective attenuation in the RF to microwave frequency spectrum from 10MHz to 50GHz. Designed in accordance with MIL-PRF-28861, they perform well in high


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    PDF 10MHz 50GHz. MIL-PRF-28861, M28861 MIL-PRF-28861 Pi filter array design conductive polymer capacitor mil std emi ferrite pi filter conductive polymer mil std gold capacitor

    Untitled

    Abstract: No abstract text available
    Text: White Paper The WIREBOUND RESISTOR –" “The report of my death was an exaggeration” Issued in June 2014 The contents of this White Paper are protected by copyright and must not be reproduced without permission 2014 Riedon Inc. All rights reserved


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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY YRH40.245 12-28V, 40A, SINGLE REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Suitable for Power Supplies with HiccupPLUS Overload Behavior Minimal Losses - Mosfets Instead of Diodes Only 150mV Voltage Drop at 40A


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    PDF YRH40 2-28V, 150mV DS-YRH40 245-EN-preliminary

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    Abstract: No abstract text available
    Text: PRELIMINARY YRH80.241 12-28V, 80A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes


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    PDF YRH80 2-28V, DS-YRH80 241-EN-preliminary

    Untitled

    Abstract: No abstract text available
    Text: POWER AVD85 Series 85 Watts Data Sheet Total Power: 85 Watts Input Voltage: 36 - 75V # of Outputs: Single SPECIAL FEATURES ƒ 2:1 Wide input range ƒ Optimised for High density, small space applications ƒ Low ripple and noise ƒ Fixed switching frequency


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    PDF AVD85 UL60950 IEC/EN60950

    Untitled

    Abstract: No abstract text available
    Text: Astec Industry Standard 100 Watts ALH25-Dual Total Power: Input Voltages: No. of Outputs: 100 Watts 48V Dual Electrical Specs Input Input range Efficiency Input reverse Voltage protection Input surge voltage 36 to 75 VDC 48Vdc Nom. 88% typical Fuse recommended 3A.MB


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    PDF ALH25-Dual 48Vdc 100mS 200mV 500msec 20MHz 100uF/100V, 47uF/50V 1000uF/10V,

    Astec Semiconductor

    Abstract: ALH25AF48 ASTEC DC-DC ceramic capacitor .47uF x 50v
    Text: Astec Industry Standard W9959_02_DCDC_001-073_73 2/8/02 3:38 PM Page 42 100 Watts ALH25-Dual Total Power: Input Voltages: No. of Outputs: 100 Watts 48V Dual Electrical Specs Input Input range Efficiency Input reverse Voltage protection Input surge voltage


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    PDF ALH25-Dual 48Vdc 100mS 20MHz 100uF/100V, 47uF/50V 1000uF/10V, 01uF/1500V Astec Semiconductor ALH25AF48 ASTEC DC-DC ceramic capacitor .47uF x 50v

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 br1632 br1225

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


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    PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    5962-86032

    Abstract: CMGA5-P114
    Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA A Inactive device 01 for new design. Add device 03. Upgrade to full military temperature range. Change drawing CAGE code. Editorial changes throughout. 88-04-15 W. Heckman B Add case outline Y. 89-09-08 W. Heckman


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    PDF MIL-STD-1835. 5962-R222-93. MIL-BUL-103. MIL-BUL-103 T00470Ã 00G3471 5962-86032 CMGA5-P114

    1602G

    Abstract: SFF1601G SFF1608G B3M3
    Text: E SFF1601G - SFF1608G TAIWAN SEMICONDUCTOR Isolated 16.0 AMPS. Glass Passivated Super Fast Rectifiers tò RoHS COM PLIANCE IT-Q-220AB ttvf Features <• H igh efficiency; ■y❖ ❖ •fr .1 * ,2 1*.z ¿ 7 Xy •iY yr> t.A‘. IW M l low VF H igh current cape b ility


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    PDF SFF1601G SFF1608G ITO-22QAB ITO-22QAB MIL-STD-202, SFF1608G) 1602G SFF1608G B3M3

    E274 equivalent

    Abstract: smd 42t qml-38535 GDFP2-F20 54lvc374
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 4 5 PREPARED BY Gary L. Gross STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE


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    PDF 003B1D2 E274 equivalent smd 42t qml-38535 GDFP2-F20 54lvc374

    qml-38535

    Abstract: CDFP4-F16 HCS151 2TT 5.00 MG 2TT 4.00 MG
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 98-05-04 Monica L. Poe Iking Correct the input name designators SO and S2 in Figure 2. Editorial changes throughout. - CFS REV SHEET REV A A A SHEET 15 16 17 REV STATUS REV A OF SHEETS SHEET 1 PM 1C N/A PREPARED BY


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    PDF HAR2801V HCS151DMSR 5962R9572801VXC HCS151KMSR 003b212 qml-38535 CDFP4-F16 HCS151 2TT 5.00 MG 2TT 4.00 MG

    MZL314

    Abstract: MZL336 RD2.0UH RD2.2L MZL308 MZL309 MZL310 MZL312 MZL316 MZL318
    Text: 420A 420B 237 610A 79F 3 5 7A 79F 25A 24C 420A 420 A u . 420B ou . a s t u o= e — »C ^ J<0 C O C O U P 237 sssss 6 10A S S IS I 357A ISSSS N ^O L O C J > m w N 03 C S ! g f V > r + > r ' V > , v \ v N ' • T n e , a K 1K M» S i £ JP f ^ " Yr ^ > ,


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    PDF MZL308 MZL309 MZL310 MZL312 MZL314 40msrà 75mV/t; 40ms-cai] 40ms-Cfii| SiS40msTfl MZL336 RD2.0UH RD2.2L MZL316 MZL318

    Untitled

    Abstract: No abstract text available
    Text: AMD £ 1 R E V IS IO N S LTR DATE YR-MO-DA DESCRIPTION AiUml /Vrhpniir. «'*<|ua t i on tnr unbiased hake under marqin test K f ' l m a A, back end iM r q in te st step i. C orr ec te d m i l i t a r y ¡;fjr-t numbers for d evi ce types 01 ana 0 2 , Technical channes


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    PDF --MS-904

    2N6506 applications

    Abstract: 2N6506
    Text: 2N6504* thru* 2N6509* T hyristors S ilic o n Controlled Rectifiers ^Motorola preferred devices . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and pow er supp ly crowbar circuits. • G la ss Passivated Junctions with Center Gate Fire for Greater Parameter


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    PDF 2N6504* 2N6509* 2N6504 2N6505 2N6506 2N6507 2N6508 2N650MBOLS 2N6509 2N6506 applications

    PZ627

    Abstract: MZL310 RD2.2L MZL308 MZL309 MZL312 MZL314 MZL316 MZL318 MZL320
    Text: 237 420B 420 A 420A 24C 79F 25A 79F 3 5 7A 610A 237 420B 420A 6 10A 357A ISSSS SSISI sssss ou . u . a s t u o= e — »C ^ J C O C O U P <0 N^O L O C J > m 03 w N C S ! g f V > r + > r ' V > , v \ v N ' • T n e , a 1 KKM » J P fff s sssss lll'fg a


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    PDF MZL308 MZL309 MZL310 MZL312 MZL314 40ms-CÂ 10MAX -25MIN- 23MAX- PZ627 RD2.2L MZL316 MZL318 MZL320

    Untitled

    Abstract: No abstract text available
    Text: 2M B I25F-1 20 25A IGBT l- ; : Outline Drawings u IGBT MODULE Features Low Saturation Voltage • W /E E ift (M O S -y— h tttifi) • Voltage Drive Variety of Power Capacity Series I A p p licatio ns • t —9 — W < —9 • AC, D C — • Inverter for M otor Drive


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    PDF I25F-1 95t/R89 Sh150

    V5F110BB3

    Abstract: No abstract text available
    Text: LATALOGLE SWITCH - BASIC OL\ VA V, \//LQU r ot CL LIS T IN G V5F110BB3 o Lü D _<l o in 8.3+0. CO 4 . 3 0 +0 . I 5 ca ca - o LO > n 0.3 6 . 3 +0 JLa +0 -0 0I .65 LO LÜ L3 HOLE IN TE RMINALS 3 < _l CL LÜ +0 . I 0 GL 03. I - 0 . 0 5 HOLE ±0.25 PRETRAVEN


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    PDF V5F110BB3 P051TI I25VDC 250VDC I25/250VAC 01MPNS10NS PA03P V5F110BB3