MD3-33
Abstract: MD333S 5050 ir led MAKING ED
Text: DESCRIPTION AND FEATURES These T-1 3/4 LED lamps, available in both diffused and non-diffused packages, provide exceptional luminous intensity when compared to conventional LED lamps. Luminous intensities as high as 2000 millicandela are available making these lamps excellent indicators in
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MD333UG
MD333S
MD333HR
MD333UR
MD3-33
5050 ir led
MAKING ED
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CMD67-21
Abstract: No abstract text available
Text: DESCRIPTION AND FEATURES 4# 2# 3# 1# 2.40 DIA. R E D C AT HODE 4# Surface Mount Technology • Tape and reel packaged for high-speed autoinsertion. • Convection and vapor-phase eflow compatible. • Compact form enables high density placement. • Packaged 2000 pieces per reel.
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CMD67-21
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ID500A-030
Abstract: EVM31-050 ID500A030 2DI75S-050A ET127 EVK75-050 etn81-055 ET1275
Text: COLLHER SEMICONDUCTOR INC MAE D 2236712 ÜGDlbSñ 2 Mb w Power Darlington Modules ICOL T - 3 > ^ '3 > 5 ' S ü t EO volts Device yp*W mMs M í£ i9 & ~ € : Switchinq Time max i ton ts tf fisec j.sec /isec. VCEO (sus) volts Pac' m w È â m Single Darlington Modules (Isolated)
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ETG81-050
ETK81
ETK85-050
ETL81
ETN81-055
1DI240A-055
ETN85-050
1DI480A-055
35kgcm
ID500A-030
EVM31-050
ID500A030
2DI75S-050A
ET127
EVK75-050
ET1275
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FCR16
Abstract: No abstract text available
Text: CB-C8 VX 0SB5 - HHL FCR16.93M2G Vdd- 3.3 CV] F lg .a - d Ta- 20 Cdeg] * T yp ical a. V1H/V1L 7 5 3 CV3 1 -1 b. V2H/V2L CV] 7 5 3‘1 3 i l l 314 3*.3 j 1 L. a .i BL • —-—' i i i i -1 c . Fosc 1*41 .5 2.9 2.7 : .4 •? : .3 0 -.017 .1 -P -.1
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FCR16
93M2G
93K2G
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Untitled
Abstract: No abstract text available
Text: Wide Band Bi-Phase Modulator DMK2-18 Features .125 3 18 • 2 - 18 G H z (Usable I -26 G Hz) ■ 3 nsec. Max. Switching Speed ■ L ow Cost ._ .250 T YP “ (6 35i 300 ,i 7 62i 1.250 :3- 75) OK » 4 -4 0 N C -2 - .188:4 78101=^ (2H O LE SI 1.500 38 10i Description
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DMK2-18
dc-500
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Untitled
Abstract: No abstract text available
Text: 2SB1391 Silicon PNP Triple Diffused HITACHI Application P o w e r s w itc h in g Outline T O -2 2 0 F M 2 A 1 . 1 Base |'o 2. C o lle c to r 3. E m itte r 1; 2 3 kQ 200 Q T y p (T yp ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SB1391
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6c33c-b
Abstract: 6C33C 6c33C-B tube 6C33C tube 6c33 tube 6c33c MAX4080 ctek bt 450
Text: TPMOfl TRIODE 6C33C-B Tpnofl 6C33C-B npeflHa3HaHeH ,qrm paôOTbi b KanecTBe nponycKaiomeM JiaMnbi b aneKTpoHHbix cTa6 n n n 3 a T o p a x HanpaweHMH CTaMMOHapHOü m noflBn>KHoii ann a p a T yp b i. OBll^ME CBEflEHMfl KaTOfl - OKCMflHbiM KocßeHHoro HaKana.
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6C33C-B
6C33C-B
280J20
6C33C
6c33C-B tube
6C33C tube
6c33
tube 6c33c
MAX4080
ctek
bt 450
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SD5400CY
Abstract: No abstract text available
Text: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max
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DIP16
T0220AA
P1087
SST174
SST175
SST176
SST177
SD210DE
SD211DE
SST211
SD5400CY
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Untitled
Abstract: No abstract text available
Text: 2SD970 K Silicon NPN Triple Diffused HITACHI Application Medium speed and power switching complementary pair with 2SB791(K) Outline T O -2 2 0 A B 2 1. B a s e 2. C o lle c to r (F la n g e ) 1 3. E m itte r 2 3 2 kQ (T y p ) 200 Q ~ ^ (T yp ) ¿ ^ 3 Absolute Maximum Ratings (T a 25 °C)
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2SD970
2SB791
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3 PIN LED
Abstract: TPJ52 toshiba tape and reel
Text: TOSHIBA 7.5 [3 ] Explanations LED Lam p Tap e P a ck a g in g S p e cifica tio n s T yp e A • • • • • • 7.5.1 Tape specifications for automatic insertion machine 03 and ^5 diameter types Standard reel, folding tape type Anode / cathode selectable
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TLRA180AP
TPK51)
100-g
3 PIN LED
TPJ52
toshiba tape and reel
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MB90F462
Abstract: FCR16 J200
Text: MB90F462 FCR4.0MC5 Udd= 5 [Ul Fig.a~d TcP 20 [deg] -0 T yp ica l a. U1H/U1L EU] 4 3 4.5 4.6 4.6 UlH V UlL — ó— ò— u .3 .1 -.1 -.3 -.5 800 600 400 200 60 55 50 45 40 4 F05C - V o' J. I i I I I - J - i I I I I I l_ [/] - - _l_ I_ I_ I_ I_ I_ I_ I_ I_ I_I_ I_ l_
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MB90F462
FCR16
J200
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Untitled
Abstract: No abstract text available
Text: MICROPAC INDUSTRIES INC 1SE D • oooou73 4 ■ V S O - 1 OOO S ER IES H YP ER A B R U P T VARACTOR TUNED V O LTA G E C O N TR O LLED O SC ILLATO RS uiEb4D PRELIMINARY* -/s" FEATURES: • 50 MHz to 3000 MHz Frequency Coverage • Fast Tuning, 100 NS Typical 3
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oooou73
-550C
VSO-1000
VSO-1007
50-OHM
7504Q
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diode KBE
Abstract: 2SB1387 2SD1978 T25E
Text: HITACHI 2SD1978 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Compìùmonlary pair with 2SB1387 ; 10 • Mrt 1. EnwKf 2. i ’ullîci« 3 ÏW2 vC i ASáS ¡ •ijf- .l <:yp.> O H im I I 'ii i ic im iiiii in rr.:nj Sí PO PC * (JEDEC TO-92 MOD. I ABSOLUTE MAXIMUM RATINGS (Ta=2$°C)
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2SD1978
2SB1387
2SDI978
diode KBE
2SB1387
2SD1978
T25E
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Z 0103 NA GE 704
Abstract: IC lc 8635 320
Text: DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR 4 PINS M INI MOLD PA C K AG E D R A W IN G S FEATU RES • L o w V o lta g e O p e ra tio n , L o w Phase D is to rtio n • L o w N o is e N F = 1.5 d B T YP. @ Vce = 3 V, Ic = 7
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2SC5192
SC-61
2SC5192-T1
2SC5192-T2
Z 0103 NA GE 704
IC lc 8635 320
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UEL51
Abstract: uel71 Scans-048 UL44 DSAGER00041 L172U
Text: U A F21 U Á F 41 U A F 42 T yp e Vf 20 12,6 12,6 0,1 0,1 0,1 = SÉ gk H eizart D + H° Verw. D + H° D + H fl 200 200 - 200 u - 0,18 l5) 100 -2 115 . . .200 -2 8 6 1,6 -3 4 6 — 1,9 2,8 - 1,9 - — 1500 > 1 0 0 0 0 17) . i») -2 ,4 0,019 6«) 1300 > 1 0 0 0 0 17)
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UL172
UEL51
uel71
Scans-048
UL44
DSAGER00041
L172U
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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PH1516-2
Abstract: LT 1146 d 1047 transistor Cbc 183 cl PH1516
Text: /M Îh C m a n A M P com pany Wireless Bipolar Power Transistor, 2W 1.45 -1.60 GHz PH1516-2 Features • • • • • • D e s ig n e d f o r C e llu la r B ase S ta tio n A p p lic a tio n s C lass AB: -33 d B c T yp 3 rd IM I a t 2 W atts PEP C lass A; +4-4 d B m I'yp 3 rd O r d e r I n te r c e p t P o in t
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PH1516-2
PH1516-2
LT 1146
d 1047 transistor
Cbc 183 cl
PH1516
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EMA11
Abstract: 6 pin yp
Text: E-Series Plug-In Mixer 5 — 2000 MHz EMA-11 R-1 Features • +7 dBm LO Power • Up to +1 dBm RF • Hermettically Sealed 0 .3 1 0 M A X 7 .8 8 0 0 3 0 ± 0 .0 0 5 (0 .7 6 ± .1 3 ) D IA . 8 P L A C E S Specifications @ 25°C Frequency Range RF, LO IF
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EMA-11
EMA11
6 pin yp
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Untitled
Abstract: No abstract text available
Text: fax id: 7026 CY54/74FCT374T CY54/74FCT574T 8-Bit Registers Features • • • • • Matched rise and fall times Fully compatible with TTL input and output logic levels ESD > 2000V Extended commercial range of -4 0 ° C to +85°C Sink Current 64 mA C om ’l , 32 mA (Mil)
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Y54/74FCT374T
Y54/74FCT574T
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Untitled
Abstract: No abstract text available
Text: Who I HEWLETT mL'HM P A C K A R D Avantek Products Wideband High Efficiency Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2020 Series Features Description Pin Configuration • Low Current: 52 mA T yp UTO—TO-8T • M ixer P o st Amp -Broadband Match
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Untitled
Abstract: No abstract text available
Text: A fa SP4T RF Switch 10-2000 MHz • ■ ■ ■ SW-114 Ultra Broadband High Isolation — 60 dB Typical Integral TTL Driver Hermetic Package DI-2 0.97 24.6 ±0.5 " S S ? » -1111111\ s r \ x 1046 l 0 -13) 16 PINS — - I 0 100 h -,j ” t YP f [ MIN
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IL-STD-883
SW-114
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Untitled
Abstract: No abstract text available
Text: 11 •1 MATCHED GaAs SP4T SWITCH MODELS SW -254/257 5-2000 MHz Low Insertion Loss, 1.0 dB Typical Fast Switching Speed, 20 ns Typical Ultra Low DC Power Consumption, 0.3m A Typical Integral TTL SW -254 or C M O S (SW -257) Driver Guaranteed Specifications*
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SW-254)
SW-257}
SW-254
SW-257
SW-257)
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Untitled
Abstract: No abstract text available
Text: AMP Catalog 65814 FDDI 2000 Bypass Switches Revised 5-95 Features • Increases re lia b ility of m ission-critical network applications ■ M eets or exceeds all ANSI standards ■ Low insertion loss — 1.1 dB typ ical, including connectors ■ M eets ANSI FDDI power
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1N4002
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SAH03
Abstract: saa01 SAC01 SDC01
Text: SANKEN DISCRETE POWER SMDS Type no. Equivalent Circuit 2 ?r' r 2? SAA01 2 Current V (A) hFE and others VCE(sat) and others (V) Ri : 4k£l r T y , i chK 1 _ 4 typ R?: ioon "T 3,4 SAB04 W ithstand Voltage -1.2 -60 2000 to 12000 -1 .4max (-2.0A pulse) wp 2.0
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SAA01
SAB04
100ns
SAC01
SAC02
SAC03
SAC04
SAH02
150fttyp
SDH01
SAH03
SAC01
SDC01
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