YMB 24
Abstract: 28C256ERP f2807
Text: 32K X 8 EEPROM SPACE ELECTRONICS INC. 28C256ERP SPACE PRODUCTS GROUP A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O3 13 16 I/O4 GND 14 15 I/O3 SEi 28C256ERP
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28C256ERP
A0-15
A6-14
F28-07
99Rev4
F28-13
YMB 24
28C256ERP
f2807
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PDF
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Untitled
Abstract: No abstract text available
Text: HY30FR060P FAST RECOVERY EPITAXIAL DIODE 600V / 30A VF=1.8V@IF=15A, trr=28ns FEATURES • • • • • • TO - 247AB UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant
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HY30FR060P
247AB
247AB
UL94-0
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PDF
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Untitled
Abstract: No abstract text available
Text: HY60FR060EP FAST RECOVERY EPITAXIAL DIODE FEATURES • • • • • • 600V / 60A VF=1.9V@IF=60A, trr=35ns TO - 247AC Modified UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant
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HY60FR060EP
247AC
UL94-0
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PDF
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diode sy 710
Abstract: YMB 24 H 04 D 35 sy 164 16-BYTE 80386DXRP 80386DXRP-16 80386DXRP-20 3BS16 T2716
Text: 80386DXRP SPACE PRODUCTS GROUP SE22V10B SEGMENTATION UNIT EFFECTIVE ADDRESS BUS PAGING UNIT 3-INPUT ADDER BUS CONTROL 34 PAGE CACHE LIMIT AND ATTRIBUTE PLA BUS PROTECTION TEST UNIT CONTROL AND ATTRIBUTE PLA INTERNAL CONTROL BUS BARREL SHIFTER, ADDER DECODE AND
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80386DXRP
SE22V10B
32-BIT
98Rev0
Q164-01
diode sy 710
YMB 24
H 04 D 35
sy 164
16-BYTE
80386DXRP
80386DXRP-16
80386DXRP-20
3BS16
T2716
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PDF
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F28-01
Abstract: YMB 24
Text: HIGH-SPEED EPI-CMOS 2048 X 9-BIT PARALLEL FIFO SPACE ELECTRONICS INC. 7203ERP SPACE PRODUCTS GROUP W 1 28 D8 D4 D3 D5 D2 D6 D1 D7 D0 FL/RT SEi 7203ERP XI FF W WRITE CONTROL WRITE POINTER THREESTATE BUFFERS EF XO/HF Q1 Q7 Q2 Q6 Q3 Q5 Q8 R READ CONTROL READ POINTER
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7203ERP
im1999
D28-03
99Rev3
F28-01
YMB 24
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F28-01
Abstract: No abstract text available
Text: HIGH-SPEED EPI-CMOS 4096 X 9-BIT PARALLEL FIFO SPACE ELECTRONICS INC. 7204ERP SPACE PRODUCTS GROUP W 1 28 D8 D4 D3 D5 D2 D6 D1 D7 D0 FL/RT SEi 7204ERP XI FF W WRITE CONTROL WRITE POINTER THREESTATE BUFFERS EF XO/HF Q1 Q7 Q2 Q6 Q3 Q5 Q8 R READ CONTROL READ POINTER
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7204ERP
im1999
D28-03
99Rev3
F28-01
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PDF
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TM5004
Abstract: No abstract text available
Text: PRELIMINARY HIGH-SPEED EPI-CMOS 8192 X 9-BIT PARALLEL FIFO SPACE ELECTRONICS INC. 7205ERP SPACE PRODUCTS GROUP W VCC D8 D4 D3 D5 D2 D6 D1 D7 D0 FL/RT SEi 7205ERP XI FF Q0 DATA INPUTS D0-D8 W WRITE CONTROL WRITE POINTER READ POINTER RS EF XO/HF R Q1 Q7 Q2
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7205ERP
98Rev0
TM5004
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PDF
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D 2395
Abstract: 99C100032RP-7 TM5005
Text: 1 GIGA BIT DYNAMIC RANDOM ACCESS MEMORY MCM SPACE ELECTRONICS INC. 99C100032RP SPACE PRODUCTS GROUP 99C100032RP Block Diagram RAS0 - RAS3 CAS0 - CAS3 A0 - A11 256Megabit (32M x 8-bit) WE0 OE0 CAS3 RAS3 CAS2 RAS2 CAS1 RAS1 CAS0 RAS0 WE0 OE0 A0 - A11 DQ0 - DQ7
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99C100032RP
99C100032RP
256Megabit
98Rev6
D 2395
99C100032RP-7
TM5005
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PDF
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SD-87832-006
Abstract: Tube 4-400 ee 2020
Text: 10 CKT SIZE 4 A RIBS LOCATION VARY DEPENDING ON CKT. SIZES 10 14 16 L -TT-â 4.50 S 5.00 1.00 6.50 - TYP 2.00 TYP - 0 1 . 0 0 ± 0.05 - 4 .6 0 /8 \ |-$-|o s o Iy I (TYP) 26.65 Ï.65 30.65 1.50 <> 4.85 6.85 8.85 10.85 12.85 14.85 16.85 18.85 3.85 22.85 24.85
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OCR Scan
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SD-87832-006
SD-87832-006
Tube 4-400
ee 2020
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PDF
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Untitled
Abstract: No abstract text available
Text: HY8LFR060T FAST RECOVERY EPITAXIAL DIODE 600V / 8A VF=1.7V@IF=8A, trr=32ns FEATURES • • • • • • TO-220AC UltraFast Recovery Time Soft Recovery Characteristic Low Forward Voltage Low Recovery Loss High Surge Current Capability RoHS Compliant APPLICATION
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HY8LFR060T
O-220AC
O-220AC
UL94-0
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PDF
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Untitled
Abstract: No abstract text available
Text: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current
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PJP24N10
PJF24N10
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
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B24N10
Abstract: YMB 06
Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch
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PJB24N10
2002/95/EC
O-263
MIL-STD-750
B24N10
O-263
800PCS/REEL
2010-REV
B24N10
YMB 06
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PDF
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Untitled
Abstract: No abstract text available
Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch
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Original
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PJB24N10
2002/95/EC
O-263
MIL-STD-750
B24N10
O-263
800PCS/REEL
983A5F
2010-REV
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PDF
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P24N10
Abstract: PJP24N10
Text: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current
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Original
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PJP24N10
PJF24N10
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P24N10
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PDF
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mitsumi actuator camera
Abstract: No abstract text available
Text: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation
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DRV201A
10-bit
DRV201
mitsumi actuator camera
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DDR266
Abstract: MS488A872DS-07
Text: MACROTRON MS488A872DS-07 8Mb x 72, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 64MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES T h e M a c r o t r o n M S 488A872DS - 07 i s an 8M bit x 72 bit DDR266 Synchronous Dynamic RAM high speed memory
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MS488A872DS-07
184-Pin
488A872DS
DDR266
DQS17
A0-A11
A0-A11:
MS488A872DS-07
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PDF
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DDR266
Abstract: DS-07 MS488A864DS-07
Text: MACROTRON MS488A864DS-07 8Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 64MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS488A864 DS-07 is an 8M bit x 64 bit DDR266 Synchronous Dynamic RAM high speed memory module. It consists of eight CMOS 8M x 8 bit Double Data
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MS488A864DS-07
184-Pin
MS488A864
DS-07
DDR266
A0-A11
A0-A11:
MS488A864DS-07
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PDF
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Untitled
Abstract: No abstract text available
Text: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation
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DRV201A
10-bit
DRV201
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PDF
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Untitled
Abstract: No abstract text available
Text: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation
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Original
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DRV201A
10-bit
DRV201
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PDF
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mitsumi actuator camera
Abstract: No abstract text available
Text: DRV201A www.ti.com SLVSBN6 – JUNE 2013 VOICE COIL MOTOR DRIVER FOR CAMERA AUTO FOCUS Check for Samples: DRV201A FEATURES 1 • • • • • • Configurable for Linear or PWM Mode VCM Current Generation High Efficiency PWM Current Control for VCM Advanced Ringing Compensation
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DRV201A
10-bit
DRV201
mitsumi actuator camera
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PDF
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DDR266
Abstract: MS4168A3264DS-07 power window control
Text: MACROTRON MS4168A3264DS-07 32Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 256MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES T h e M a c r o t r o n M S4816A3264DS - 0 7 i s an 32M bit x 64 bit DDR266 Synchronous Dynamic RAM high speed
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MS4168A3264DS-07
184-Pin
256MB
S4816A3264DS
DDR266
A0-A11
A0-A11:
MS4168A3264DS-07
power window control
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PDF
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DDR266
Abstract: MS488A1672DS-07
Text: MACROTRON MS488A1672DS-07 16Mb x 72, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 128MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS488A1672DS-07 is an 16M bit x 72 bit DDR266 Synchronous Dynamic RAM high speed memory module. It consists of eighteen CMOS 8M x 8 bit
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MS488A1672DS-07
184-Pin
128MB
MS488A1672DS-07
DDR266
operat120
A0-A11
A0-A11:
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PDF
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DDR266
Abstract: MS488A1664DS-07
Text: MACROTRON MS488A1664DS-07 16Mb x 64, 184-Pin DIMM 2.5V DDR SDRAMs with SPD 128MB DDR SDRAM Module FRONT VIEW BACK VIEW GENERAL DESCRIPTION FEATURES The Macrotron MS488A1664DS-07 is an 16M bit x 64 bit DDR266 Synchronous Dynamic RAM high speed memory module. It consists of sixteen CMOS 8M x 8 bit Double
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MS488A1664DS-07
184-Pin
128MB
MS488A1664DS-07
DDR266
A0-A11
A0-A11:
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PDF
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Untitled
Abstract: No abstract text available
Text: BD540YT~BD5200YT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes TO-251AB Unit : inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .264(6.7) .248(6.3) • For surface mounted applications
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BD540YT
BD5200YT
O-251AB
2002/95/EC
2010-REV
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