injection moulding machine plc controlled system
Abstract: relay safety telemecanique telemecanique safety relays telemecanique emergency stop relay relays telemecanique xps-mp XPSMP telemecanique hand switch telemecanique telemecanique emergency stop button
Text: Telemecanique XPS-MP 43 53 13 2374 Y84 Y94 2 I Y + 2 Y C C1 I 1 C3 I 3 A1 2 4 A 4 I I6 C6 I 5 C5 64 63 54 34 44 33 24 14 Module de sécurité pour deux fonctions de sécurité indépendantes Safety Controller for two independent safety functions Safety-Controller für zwei
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1800VA/180VA)
EN954-1
injection moulding machine plc controlled system
relay safety telemecanique
telemecanique safety relays
telemecanique emergency stop relay
relays telemecanique
xps-mp
XPSMP
telemecanique hand switch
telemecanique
telemecanique emergency stop button
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PDF
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Telemecanique XPS
Abstract: XPS AF HX-JE Telemecanique injection moulding machine plc controlled system circuit diagram of keypad door lock system TP 3212 IEC 60947-5-1 Telemecanique magnetic telemecanique safety relays
Text: Telemecanique XPS-MP Farnell Codes: 4275901 43 53 13 2374 Y84 Y94 2 I Y + 2 Y C C1 I 1 C3 I 3 A1 2 4 A 4 I I6 C6 I 5 C5 64 63 54 34 44 33 24 14 Module de sécurité pour deux fonctions de sécurité indépendantes Safety Controller for two independent safety functions
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Original
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EN954-1
Telemecanique XPS
XPS AF
HX-JE
Telemecanique
injection moulding machine plc controlled system
circuit diagram of keypad door lock system
TP 3212
IEC 60947-5-1
Telemecanique magnetic
telemecanique safety relays
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PDF
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SR130DD00
Abstract: No abstract text available
Text: Safety Monitoring Relays SR130DD SR130DD For full product information, visit www.sti.com. Use the SpeedSpec Code for quick access to the specific web page. Dual-Channel Dual-Device Safety Monitoring Relay • Power requirements—the SR130DD will accept 24 VDC
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SR130DD
SR130DD
SR130DD00
SR130DD00
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telemecanique XCS-E
Abstract: Telemecanique XPS Preventa xps-ac XPSAT5110 XPSAF5130 xpsav11113 XPS-AT3410 telemecanique xps-ak XPS-AC XPSAC5121P
Text: Machine Safeguarding Products PREVENTA XPS Safety Relays Supplement Catalog 03 File 9007 CONTENTS Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10 General Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-12
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1-888-SquareD
9007CT0203
telemecanique XCS-E
Telemecanique XPS
Preventa xps-ac
XPSAT5110
XPSAF5130
xpsav11113
XPS-AT3410
telemecanique xps-ak
XPS-AC
XPSAC5121P
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PDF
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Untitled
Abstract: No abstract text available
Text: Safety Monitoring Relays SR230DD SR230DD For full product information, visit www.sti.com. Use the SpeedSpec Code for quick access to the specific web page. Dual-Channel Dual-Device Safety Monitoring Relay • Power requirements—the SR230DD will accept 24 VDC
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SR230DD
SR230DD
SR230DD00
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Photo sensitive diode
Abstract: PIC96601 KHP2032 KSM-50X PIC79603 PIC95603 PIC96337 kodenshi
Text: ñW¡M vu RoHS Automotive solution m ÊÊÊ wtm ¥ / y rL 3 V 0 SISH0 | For solar radiation light detection For wireless control of car navigation equiment = l> 7 * Y94*- \ HP5F Infrared receiver module Silicon photo diode with transparent molding resin HP5F
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OCR Scan
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PIC79603
PIC95603
KSM-50X*
KSM-55D2M
KHP2032*
PIC96601
K0E1007*
PIC96337
PIC9623G
Photo sensitive diode
KHP2032
KSM-50X
PIC96337
kodenshi
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PDF
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Untitled
Abstract: No abstract text available
Text: ESAD25M C,N,D <i5A> ¡ a a g g it » f'f = t - K FAST RECOVERY DIODE • Features >W y # I t A' MUR £ t l f t 7 J l ^ - Y94 Insulated package by fully molding. High voltage by mesa design. ►S S i f S t t High reliability ìé m m C onnection D iagram
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OCR Scan
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ESAD25M
ESAD25M-DDC
ESAD25M-DDN
ESAD25M-DDD
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PDF
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Untitled
Abstract: No abstract text available
Text: T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:53:00 amp36051 /home/amp36051/edmmod AL L R IG H T S R E S E R V E D . ,19 n 2 LOC AA
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OCR Scan
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amp36051
/home/amp36051/edmmod
NLE55
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H I S DRAWING C 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. ,19 AL L R IG H T S R E S E R V E D . D C 4 .88 [ . 192] 17.53 [ .690] -1 2 .58 [.495] A I 13- M A R —01 AMP 1 4 7 1 - 9 REV 09MA Y94
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OCR Scan
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09MAY94
13-MAR-01
amp36051
/honie/amp36051
0U1C-0040-01
09MAR01
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PDF
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Untitled
Abstract: No abstract text available
Text: r 4 T H I S DRAWING T 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. AL L R IG H T S R E S E R V E D . QUANTITY AMP 1 4 7 1 - 9 REV 09MA Y94 i 1 1 -MA Y-0 1 10:38:29 amp36051 /home/amp36051/edmmod
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OCR Scan
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amp36051
/home/amp36051/edmmod
NLE55
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PDF
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6-229912-7
Abstract: 1-229912-1 229912-1 229912-4
Text: 4 T H I S DRAWING C 3 R E L E A S E D FOR P U B L I C A T I O N 15 U N P U B L IS H E D . CO PYRIGHT BY AMP INCORPORATED. 19 C Q D C 4-40 2 0NC-2B HOLES A AMP 1 4 7 1 - 9 REV 09MA Y94 i 09-MAR-01 1 7 :0 7:2 7 amp36051 /home/amp36051/edmmod ,19 AL L R IG H T S R E S E R V E D .
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OCR Scan
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09may94
09-MAR-01
amp36051
/honie/amp36051
09MAR0'
6-229912-7
1-229912-1
229912-1
229912-4
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PDF
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MMIC marking code S2
Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match
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OCR Scan
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CGY94
Q68000-A9124
577ms
235bD5
MMIC marking code S2
SIEMENS MMIC
powaramp ta
CGY so
SMD F09
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PDF
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FT-63
Abstract: No abstract text available
Text: 'HYUNDAI H Y 5 1 V 4 8 1 0 B 5 1 2 K X 8- b lt C M O S DRAM w it h S e r ie s W r tte - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V4810B
p51V4810B
1AC20-00-MAYM
HY51V4810BJC
HY51V4810BSUC
HY51V4810BTC
FT-63
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PDF
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Untitled
Abstract: No abstract text available
Text: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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OCR Scan
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HY51V4410B
1AC14-00-MA
HY51V4410BJ
HY51V4410BU
HY51V4410BSU
HY51V441OBT
HY51V4410BLT
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V17400A
HY51V17400A
1AD35-00-MA
4b750flÃ
HY51V17400AJ
HY51V17400ASU
HY51V17400AT
HY51V17400ASLT
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HY531000S
Abstract: No abstract text available
Text: H Y 5 3 1 0 0 0 S e r ie s IM X 1-bit CMOS DRAM "H Y U N D A I DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY531000
300mil
1AB04-30-MAY94
4b750flÃ
HY531000S
HY531000J
1AB04-30-MAÅ
HY531000S
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PDF
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4410b
Abstract: IC 4410B
Text: "HYUNDAI H Y 5 1 V 4 4 1 0 B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PRELIMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced
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OCR Scan
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HY51V4410B
1AC14-00-M
HY51V4410BJ
HY51V4410BU
HY51V4410BSU
HY51V4410BT
HY51V4410BLT
4410b
IC 4410B
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PDF
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2-767004-2
Abstract: No abstract text available
Text: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION AB •POSI TI ON #1 REVISED P ER I35EP02 DK5 DRD 0512-0258-02
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OCR Scan
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35EP02
60SSES
7-2S-97
1710B-360E
09MAY94
13-5EP-02
aoip26463
/home/amp26463/dmmod/u
2-767004-2
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 TH 5 DRAWING CO PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 2 3 ,1 9 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION AA •POSI TI ON #1 REVISED P ER EC 0S1B-0020-01 DD 0 9 J UL 0
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OCR Scan
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0S1B-0020-01
18-JUL-97
/home/ssrvl72a/dsk01/dept3621/ampi
2439/drawinas/mictor
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PDF
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OQ0005
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 4 8 0 0 B S e r ie s 512Kx8-blt C M O S DRAM PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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512Kx8-blt
HY51V4800B
400mil
28pin
1AC18-00-MAY94
OQ0005
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PDF
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cs40
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 4 4 1 0 A S e r íe s 1M X 4-bit CMOS DRAM with Wrlte-Per-Blt DESCRIPTION The HY514410A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. Tine HY514410A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced
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OCR Scan
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HY514410A
1AC06-20-MAY94
HY514410AJ
HY514410AU
HY514410AT
HY514410ALT
HY514410AR
cs40
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PDF
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HY514100J70
Abstract: HY514100J PSIM 9
Text: • H Y U N D A I HY514100 Series 4M X 1 -bit CMOS DRAM DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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HY514100
1AC01-204IA
1AC01-20-MAY94
679tV17
1AC01
HY514100J70
HY514100J
PSIM 9
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 4 3 7 0 B S e r ie s 256K* 16-bit CMOS DRAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY51V4370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve
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OCR Scan
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16-bit
HY51V4370B
400mil
40pin
40/44pin
1AC24-00-MA
DDD27M
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 TH 5 DRAWING C O PY R IG H T IS U N P U B L IS H E D . 19 RELEASED BY AMP IN CO RP O RA TE D. ALL FOR RI C PUBLICATION HTS 6 4 5 3 2 ,19 DI ST LOC R ES ER V ED . AD REVISIONS 47 DESCRIPTION Y •POSI TI ON #1 REVISED P ER EC 0G22-0025-99 SS 4- 26-99 INDICATOR
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OCR Scan
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0G22-0025-99
C17510.
18-JUL-97
/home/ssrvl72a/dsk01/dept3621/ampi
2439/drawinas/mictor
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PDF
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