Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Y PARAMETERS OF TRANSISTORS Search Results

    Y PARAMETERS OF TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    Y PARAMETERS OF TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Top Considerations When Buying or Specifying an RF Switch

    Abstract: No abstract text available
    Text: 12| wirelessdesignmag.com  c ata g o r y eye on switches Top Considerations When Buying or Specifying an RF Switch When choosing or specifying RF switches, all parameters must be considered simultaneously as they set the topology and circuit architecture of the switch.


    Original
    PDF

    HALL EFFECT 21E

    Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
    Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original
    PDF 26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original
    PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    2N918 motorola

    Abstract: 2N918 MHQ918 MHQ918H MHQ918HX MHQ918HXV MIL-STD-750 2072 14NB
    Text: I MHQ918 MHQ918H MHQ918HX MHQ918HXV I I I I QUAD DUAL NPN HERMETIC HIGH FREQUENCY designed for low-level, Low Noise Figure fT= 850 Transistors IC Automatic applications. Product — to 2N918 Package — Compact Insertion for Hi-Rel See Tables MAXIMUM amplifier


    Original
    PDF MHQ918 MHQ918H MHQ918HX MHQ918HXV 2N918 2N918 motorola 2N918 MHQ918 MHQ918H MHQ918HX MIL-STD-750 2072 14NB

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors s-parameter definitions 1 General SCATTERING PARAMETERS For the use of s-parameters for the specification of The scattering or s-parameters described in this document are in accordance with IE C 60747-7, Chapter II, Section 5. 1.1 In distinction to the conventional h-, y- and z-parameters,


    OCR Scan
    PDF g2000 28ain:

    Untitled

    Abstract: No abstract text available
    Text: LM139/139A,339/339A RAYTHEON/ 11E D | OQO blM a S | Comparators -p _ y j, - S I.'M I CON D U CT 0 R LM139/139A, 339/339A, Single-Supply Quad Comparators They are intended for applications not needing response time less than 1 |a.S, but demanding excellent op amp input parameters of offset


    OCR Scan
    PDF LM139/139A 339/339A LM139/139A, 339/339A, 14-Lead

    yr yf transistor

    Abstract: ITT Intermetall
    Text: Technical Information Index of Symbols b bf bi bo br B Bq C Ci Co CcBO C EBO Ciss Cr E f fr F Fc g 9f 9i 9m 9o 9r 9s GC GP Gpav Gp max Gy h hf hi h0 hr hFE Iß Ibm Ibi >B2 !c !c a v leso !c e o !c e r 6 Imaginary part of y-Parameters Imaginary part of forward


    OCR Scan
    PDF

    TIPP31

    Abstract: TIPP31A TIPP31B TIPP31C TIPP32 TIPP32A TIPP32B TIPP32C
    Text: TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS _ M A Y 1989 • R EVISED M A Y 1995 20 W Pulsed Pow er Dissipation • 100 V C apability 1 LP PACKAGE TOP VIEW • 2 A C ontinuous Collector Current • 4 A Peak C ollector Current


    OCR Scan
    PDF TIPP31, TIPP31A, TIPP31B, TIPP31C TIPP31 TIPP31A TIPP31B TIPP32 TIPP32A TIPP32B TIPP32C

    100-C

    Abstract: BY205-400 TIPL760 TIPL760A TIPL760B TIPL760C
    Text: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS _ A U G U S T 1978 • R E V IS E D M A Y 1995 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at 100°C


    OCR Scan
    PDF TIPL760B, TIPL760C O-220 TIPL760 TIPL760A TCP741AC 100-C BY205-400 TIPL760B

    Y parameters of transistors

    Abstract: SCC50
    Text: Philips Semiconductors Product specification Microwave Transistors General RELIABILITY GRADES Microwave transistors are available from different quality levels which are listed as follows: • Standard grade This applies to devices following the designation rules


    OCR Scan
    PDF

    tip320

    Abstract: texas instruments tip32 c2688 Texas Instruments TIP32C TIP32B texas 2N4301 TRANSISTOR 36774 TIP32 equivalent TIP32 TIP32A
    Text: "Tl x a s INSTR -COPTO} t2 DE | Ö T b l 7 5 h Ö 9 6 1 7 2 6 TEXAS INSTR O P T Ò T 6 2C 0D3L7tifl Ö 36768 TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F P-N-P SILICON POWER TRANSISTORS JU LY 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With TIP31 Series


    OCR Scan
    PDF TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F TIP31 O-220AB TIP32 tip320 texas instruments tip32 c2688 Texas Instruments TIP32C TIP32B texas 2N4301 TRANSISTOR 36774 TIP32 equivalent TIP32A

    bd743 transistor

    Abstract: BD744 bd744c BD743B TEXAS INSTRUMENTS BD743 BD743A BD743B BD743C T1S63 bd744c texas instruments
    Text: BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS _ A U G U ST 1978 - R E V IS E D M A Y 1995 • Designed for Complementary Use with the BD744 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current


    OCR Scan
    PDF BD743, BD743A, BD743B, BD743C O-220 BD744 BD743 BD743A BD743B bd743 transistor bd744c BD743B TEXAS INSTRUMENTS T1S63 bd744c texas instruments

    TIP41C EQUIVALENT

    Abstract: TIP41A equivalent TIP41 Texas Instruments TIP41 equivalent c2688 texas instruments tip41 t1p41 TIP41c Texas Instruments TRANSISTOR tip41c schematic c2688 transistor
    Text: IN STR -COPTO} t i 8 9 6 1 7 2 6 T E XA S INSTR OPTO D F jlflT b lT a b OOBt fl Of l 62C 3 6 8 0 8 TIP41, TIP41 A, TIP41B, TIP41C, TIP41D, TIP41E, TIP41F N-P-N SILICON POWER TRANSISTORS J U LY 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With TIP42 Series


    OCR Scan
    PDF 89ei726 TIP41, TIP41A, TIP41B, TIP41C, TIP41D, TIP41E, TIP41F TIP42 TQ-220AB TIP41C EQUIVALENT TIP41A equivalent TIP41 Texas Instruments TIP41 equivalent c2688 texas instruments tip41 t1p41 TIP41c Texas Instruments TRANSISTOR tip41c schematic c2688 transistor

    c2688

    Abstract: TIP33C equivalent TIP33A equivalent TIP33C TIP33A TIP33D C-2688 c2688 transistor br c2688 120v 120v 10a 80w transistor
    Text: DE |flelbl7Sb 0 0 3 L 7 7 L 7 TE XAS I N S T R -COPTO} 62C 36776 S96t726 TEXAS INSTR OPTO TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F N-P-N SILICON POWER TRANSISTORS JU L Y 196 8 - R EVISED O CTO BE R 1984 • Designed for Complementary Use With TIP34 Series


    OCR Scan
    PDF 003L77L 96t726 T-33-S3 TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F c2688 TIP33C equivalent TIP33A equivalent TIP33C TIP33A TIP33D C-2688 c2688 transistor br c2688 120v 120v 10a 80w transistor

    sw 357 opto

    Abstract: b39 transistor TIP33C equivalent
    Text: DE |flelbl7Sb 0 0 3 L 7 7 L 7 TE XA S I N S T R -COPTO} 62C 3 6 7 7 6 S96t726 TEXAS INSTR OPTO TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F N-P-N SILICON POWER TRANSISTORS JU LY 1968 - RE V ISE D OCTO BER 1984 • Designed for Complementary Use With T IP34 Series


    OCR Scan
    PDF S96t726 TIP33, TIP33A, TIP33B, TIP33C, TIP33D, TIP33E, TIP33F sw 357 opto b39 transistor TIP33C equivalent

    TIp328

    Abstract: TIP31 PNP Transistor T1P32A
    Text: TIP32, TIP32A,TtP32B, TIP32C PNP SILICON POWER TRANSISTORS C o p y right 1997, Pow er Innovations Limited, U K • Designed tor Complementary Use with the TIP31 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current


    OCR Scan
    PDF TIP32, TIP32A TtP32B, TIP32C TIP31 O-220 TIP32 TIP32B TIp328 TIP31 PNP Transistor T1P32A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Small-signal Field-effect Transistors QUALITY General section • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •


    OCR Scan
    PDF TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F TIP30 T0-220AB

    C2688

    Abstract: C 2688 TEXAS INSTRUMENTS TIP29 c2688 transistor 74ti c2688 L TIP29 TIP29A TIP29B TIP29D
    Text: INSTR -COPTO* bS »E^jflTt.l7SL 0□ 3b744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 36744 r - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS JU LY 1968 - REVISED OCTOBER 1984 • Designed for Complementary Use With TIP30 series


    OCR Scan
    PDF 003tj744 TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F TIP30 T0-220AB C2688 C 2688 TEXAS INSTRUMENTS TIP29 c2688 transistor 74ti c2688 L TIP29 TIP29A TIP29B TIP29D

    2N9860

    Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan
    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N9860 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N3858

    TIP42C EQUIVALENT

    Abstract: TIP42C texas instruments c2688 TIP42C texas TIP42 Texas Instruments TIP42A TEXAS TIP42A equivalent tlp42c TIP42D C-2688
    Text: TEXAS INSTR -COPTO} "8 9 & 1 7 2 6 tS TEXAS J.NSTR D F /ë lb m b <OPIU> DÜ3 tf l lt i 62C 3 6 8 1 6 TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed for Complimentary Use With TIP41 Series


    OCR Scan
    PDF 36T72^ TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F TIP41 T0220AB TIP42C EQUIVALENT TIP42C texas instruments c2688 TIP42C texas TIP42 Texas Instruments TIP42A TEXAS TIP42A equivalent tlp42c TIP42D C-2688

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors General Small-signal Field-effect Transistors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one


    OCR Scan
    PDF

    DA 2688

    Abstract: transistor DA 2688 transistors TIP32 TIP32 PNP Transistor TIP32B texas
    Text: "TEXAS INSTR i O P T O F 8961726 t.5 T EX A S IN S T R D E T J M b lT S h O PTO 0D 3L7tifl Ö 62C 3 6 7 6 8 TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F P-N-P SILICON POWER TRANSISTORS J U L Y 1968 - R EV ISED OCTOBER 1984 • Designed for Complementary Use With TIP31 Series


    OCR Scan
    PDF TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F TIP31 O-220AB 0Thl72b DA 2688 transistor DA 2688 transistors TIP32 TIP32 PNP Transistor TIP32B texas

    spice germanium diode

    Abstract: SNW-EQ-611
    Text: Philips Semiconductors Small-signal Transistors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one ultimate standard, that of zero defects. This aim is guided


    OCR Scan
    PDF