6R190C6
Abstract: smd TRANSISTOR code marking PR smd transistor marking da IPP60R190C6 EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 1.0, 2009-06-19 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
smd TRANSISTOR code marking PR
smd transistor marking da
EL series SMD transistor
TRANSISTOR marking ar code
6r190
smd transistor marking 1 da
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6R199P
Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description
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IPL60R199CP
150mm²
6R199P
mosfet 6R199
ipl60r199cp
6R199P DATA SHEET
smd transistor AR 6
JESD22
EL series small size SMD transistor
6R19
IPL60R199
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6r385P
Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description
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IPL60R385CP
150mm²
6r385P
IPL60R385CP
JESD22
EL series small size SMD transistor
infineon msl
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EL series SMD transistor
Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description
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IPL60R299CP
150mm²
EL series SMD transistor
6R299P
ipl60R299cp
mosfet 600v
JESD22
ipl60r
IPL60
6r299
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80N75
Abstract: No abstract text available
Text: STL80N75F6 N-channel 75 V, 4.5 mΩ typ., 18 A STripFET DeepGATE™ VI Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on max ID STL80N75F6 75 V 5.5 mΩ 18 A • Low gate charge 1 2 • Very low on-resistance
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STL80N75F6
DocID018785
80N75
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Untitled
Abstract: No abstract text available
Text: STFI5N95K3 N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3 Power MOSFET in I2PAKFP package Datasheet − production data Features 1 2 Order code VDS RDS on max ID PTOT STFI5N95K3 950 V 3.5 Ω 4A 25 W • Fully insulated and low profile package with
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STFI5N95K3
O-281)
AM01476v1
DocID023624
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TRANSISTOR bHrt
Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE
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STT3PF20V
OT23-6L
TRANSISTOR bHrt
transistor 9a2a
ga8c
STT3PF20V
bhrt
transistor a6 s
STT3PF20
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Untitled
Abstract: No abstract text available
Text: STY130NF20D N-channel 200 V, 0.01 Ω typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS RDS on max. STY130NF20D 200 V 0.012 Ω ID PTOT 130 A 450 W • Exceptional dv/dt capability
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STY130NF20D
Max247
Max247
DocID15300
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7N80K5
Abstract: V/7N80K5
Text: STL7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)
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STL7N80K5
DocID025551
7N80K5
V/7N80K5
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Untitled
Abstract: No abstract text available
Text: STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD10NF30 300 V 0.33 Ω 10 A • Designed for automotive applications and
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STD10NF30
AEC-Q101
DocID026136
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BN384M2.5X6
Abstract: No abstract text available
Text: STL70N4LLF5 N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on ID STL70N4LLF5 40 V 6.7 mΩ 18 A • RDS(on) * Qg industry benchmark 1 2 3 • Extremely low on-resistance RDS(on)
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STL70N4LLF5
DocID15229
BN384M2.5X6
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Untitled
Abstract: No abstract text available
Text: STL70N4LLF5 Automotive-grade N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS RDS on max ID STL70N4LLF5 40 V 6.7 mΩ 18 A • Designed for automotive applications and
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STL70N4LLF5
AEC-Q101
DocID15229
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Untitled
Abstract: No abstract text available
Text: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω
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STF1N105K3,
STFW1N105K3,
STP1N105K3
O-220FP,
O-220
STF1N105K3
STFW1N105K3
O-220FP
O-220
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STW19NM50N
Abstract: No abstract text available
Text: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1
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STF19NM50N,
STP19NM50N,
STW19NM50N
O-220FP,
O-220
O-247
STF19NM50N
O-220FP
O-220
STP19NM50N
STW19NM50N
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Untitled
Abstract: No abstract text available
Text: STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDS RDS on max. ID STL90N3LLH6 30 V 0.0045 Ω 24 A (1) 1. The value is rated according Rthj-pcb
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STL90N3LLH6
DocID15573
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fs8205A
Abstract: FS8205A-DS-12 fs8205
Text: FS8205A-DS-12_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.2 FS8205A Fo Dual N-Channel Enhancement Mode Power MOSFET FS8205A Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8205A-DS-12
FS8205A
25Deg
125Deg
Rds25
25mohm
32mohm
Rds45
fs8205A
fs8205
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IRFR48Z
Abstract: IRFU48Z U120
Text: PD - 95950 AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description IRFR48ZPbF IRFU48ZPbF HEXFET Power MOSFET D VDSS = 55V
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IRFR48ZPbF
IRFU48ZPbF
IRFR/U48ZPbF
O-251AA)
IRFR48Z
IRFU48Z
U120
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K204 transistor
Abstract: k2045 transistor smd XH UA356
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK200-50Y DESCRIPTION BUK204-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK200-50Y
BUK204-50Y
K204 transistor
k2045
transistor smd XH
UA356
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irf840 mosfet drive circuit diagram
Abstract: Application of irf840 TPS2812 power supply IRF840 APPLICATION SCHEMATIC POWER SUPPLY irf840 irf840 power supply TPS2811 TPS2812D TPS2813 TPS2814
Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS S LVS132C - N O VE M B E R 1995 - R EVISED JA N U A R Y 1997 • Industry-Standard Driver Replacement • 25-ns Max Rise/Fall Times and 40-ns Max Propagation Delay - 1-nF Load, V c c = 14 V
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PDF
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TPS2811,
TPS2812,
TPS2813,
TPS2814,
TPS2815
SLVS132C
TPS2813
25-ns
irf840 mosfet drive circuit diagram
Application of irf840
TPS2812
power supply IRF840 APPLICATION
SCHEMATIC POWER SUPPLY irf840
irf840 power supply
TPS2811
TPS2812D
TPS2813
TPS2814
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PowerMOS transistor TOPFET high side switch
Abstract: BUK203-50Y
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK203-50Y
BUK203-50Y
OT263
T0220
PowerMOS transistor TOPFET high side switch
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diode sg 5 ts
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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PDF
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BUK203-50Y
BUK207-50Y
diode sg 5 ts
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PowerMOS transistor TOPFET high side switch
Abstract: 100-P BUK200-50Y C6560
Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK200-50Y
OT263
T0220
PowerMOS transistor TOPFET high side switch
100-P
BUK200-50Y
C6560
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5g smd transistor
Abstract: transistor 5d smd smd transistor 3U
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK203-50Y DESCRIPTION BUK207-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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PDF
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BUK203-50Y
BUK207-50Y
BUK207-50Y
5g smd transistor
transistor 5d smd
smd transistor 3U
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6898~| P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. unit : mm 2078B Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENN6898~
2SJ569LS
2078B
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