XR-082 N Search Results

XR-082

Abstract: XR-082CP TL083 XR082CP XR-083 XR-082CN Xr083 XR-082 N XR082M OP tl 082
Contextual Info: Z * EX4R XR-082/083 Dual Bipolar JFET Operational Amplifier FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION The XR-082/XR-083 family of dual bipolar JF E T opera­ tional amplifiers are designed to offer higher perform­ ance than conventional bipolar op amps. Each amplifier

T1451

Abstract: 471 1kv 101 2KV CAP 103 2KV 472 1kv CAP f 103 2KV 821 2kv 681 1kv 103 1KV SEC CAP 250V 4700
Contextual Info: HC Series Multilayer Ceramic Chip Capacitors High Voltage MERITEK PECIFICATIONS CODE NPO (1B) X7R (2R1) o ∆C ±15% Temperature Characteristics 0 ±30ppm/ C Dissipation Factor (D.F.) 0.15% max. 2.5% max. (+25oC, 1Vrms, 1MHz) (+25oC, 1Vrms, 1 KHz) Insulation

MSC 501 302

Abstract: MSC 501 302 diode B 103 K 1KV SEC ceramic capacitor ceramic capacitor 1kV 6.8 nF X7R 3KV 3300 pf ceramic capacitor 6,8 nF 1kV p 5 capacitor 103 1KV 1210 ceramic capacitor .22uf 10 250V Meritek 6.8 nF ceramic capacitor MSC 501
Contextual Info: MA Series Multilayer Ceramic Chip Capacitors MERITEK FEATURES AND APPLICATIONS Dielectric x COG x NPO x x x X7R/X5R x x x Y5V x Features Ultra-stable Low dissipation factor Tight tolerance available Good frequency performance No aging of capacitance

300N-120

Abstract: 233110
Contextual Info: ± i g b t ^ ^ z l - ; 1 MBI300N-120 r N '> y - X j u J 1200V/300A/ 1 • 4^^ : Features 'V + ' s V High •^/± SERj Speed Switching Voltage Drive Low Inductance Module Structure • o : Applications 4 > '< — $ Inverter for Motor Drive — • A C ,D C '9 '“ # 7 * > 7 P AC and DC Servo Drive Amplifier

Contextual Info: BASIC ORDER UNIT nichicon • Request on O rder Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Bulk Size o f product Long lead Taping L ead fo rm e d ¿3 ¿4 ¿5 — — 2.000

2SC3733

Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Contextual Info: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier

ad2410

Abstract: adv7682 ADV7782WBBCZ ADV7782 AD8465 APIX2 AD7908
Contextual Info: Automotive Recommended Part List ARPL PRODUCT CATEGORY GENERIC NUMBER AMBIENT TEMP RANGE MATERIAL DESCRIPTION Updated: 10-Jul-2015 PACKAGE MATERIAL NUMBER ITEM Amplifiers and Comparators AD8040 -40C to 125C Quad Low Power R-R I/O Amp. 14-TSSOP_4.4-4.4_MM

jb 5531

Abstract: JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A
Contextual Info: 5 P — S 7 • 5^— K SEC m '> « ;□> yxor7 S ilic o n P o w e r T ra n s is to r f * T i\ r x 2SC3567 lif f l h'/-? < 7- 2 S C 3 5 6 7 i i i f F i l Ë l ï i X -i v & y ÿ " m t l- 7 > x x n - , X ^ y f > 7 - u J f i U - i ' , 0 H Ï2 IH Jp - fï : m m

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

UPA61A

Abstract: UPA60A PA60A UPA61 T108
Contextual Info: NEC j m + T t v r x Y = 7 7 . 9 C o m p o u n d F ie ld -E ffe c t T ra n s is to r A / / P A 6 A , 6 1 A i i f t i m m N-Channel Silicon Dual Junction FET Differential Am plifier Industrial Use HP A 60 A , 9YMM /PACKAGE DIMENSIONS Unit: mm 6 1 A ii,N f- -v ^ ;U x > ;

oc60

Abstract: ICX206AKB X492 KA2 V3
Contextual Info: SONY IGX206AKB í í £ 4 .5 mm 1/ 4 SÜ N TSC* ~y — ICX 206A K B (i, M L tz y' - ë - r t jj ¿ 7K 4 y 9 *74 > Í 5C C D # :ífít^ - 7-’tr'to Super ÍÍÉ^pqICX086A K B H ^ HAD CCDfètÎiO^fffl U S J t, L fz o )V ? £ L T Y e , Cy, Mg, G 7 + - ;v

Contextual Info: 155 Mbps ATM SAR CONTROLLER WITH ABR SUPPORT FOR PCI-BASED NETWORKING APPLICATIONS PRELIMINARY INFORMATION IDT77252 Integrated Device Technology, Inc. KEY FEATURES • Full-duplex Segmentation and Reassembly SAR at 155 Mbps "wire-speed" (310 Mbps aggregate speed).

ABB 07 kr 240

Abstract: IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101
Contextual Info: M O S*tt0 SS MOS Integrated Circuit u P D645 3 CMOS LSI ’V'f ?n=r > £ * - ? izffiAfr b l t X TV, t ' T * * T -i X 9 & £ // P D 6 4 5 3 i , _hC H ^iJ, -f-v V 7 > /f ffl C M 0 S L S I T ' T o fz, • -? -> '< & • h ' 6 0 X :? : £ ^ 7 * t ~ & ^ ' > • x ; iJ - > ' ^ - V 7 ^ i ' * f V X

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20

Halbleiterbauelemente DDR

Abstract: information applikation MAA725 information applikation mikroelektronik VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik applikation "Mikroelektronik" Heft mikroelektronik DDR applikation heft
Contextual Info: LnnJütkilr'l; E l d - t = n a | - | i l - C Information Applikation D/A WandlerFamilie wvReferenz Stromquellen­ schalter /« Widerstands­ netzwerk 1 J • -CCI w f f i ni ö l k ä r i' t s i s l s S - t f c s n o r i i l - t i iforma t l o n pplikation

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

Contextual Info: f PRELIMINARY CYPRESS C Y 7 C 92 4D X 200 MBaud HOTLink Transceiver Features Second generation HOTLink™ technology Fibre Channel and ESC O N com pliant 8B /10B encoder/decoder 10- or 12-bit pre-encoded data path raw m ode 8- o r 10-bit encoded data transport (using 8B/10B

LA 7821

Abstract: LM 7821 str wg 753 pj 0266 lu 7821 YCR02 p46ad F7821 NEC 7924 PD78213
Contextual Info: J. 8 I I ih Y N E C ^ M os M O S In te g ra te d C ir c u it //PD78212 A ,78213 (A),78214 (A) t f -y h • is > V iV j- 7 7°* v > r ^ P = i V b 0 zL — ^ ¿iPD78212(A), 78213(A), 78214(A) tt, 78K/II -> U- X ' W i S T t . 78K/II v 'J - X l i , ^ Î Æ â R H J : U 1M

T49470

Abstract: ht presidio Presidio CERAMIC CAP BQ15-4 Presidio Components BR186 Marking J1N S208X7R br126 EIA-469
Contextual Info: SMPS STACKED CAPACITORS CATALOG 1001 TABLE OF CONTENTS MIL-PRF-49470 SPECIFICATION .1 DSCC DRAWING 88011 NPO STACKED

vlt 2900

Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Contextual Info: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „

120m tdk

Abstract: 78P312 D78P312A pd78312 PA-78P312GF IEM-5086 uPD78P312 uPD78P312A uPD78P312AGQ-36 uPD78P312AL
Contextual Info: — S • S '— h mmmfà NEC m os M O S Integrated Circuit P D 7 8 P312A m ^ f n r l S c f A I 6 / 8 £ ' y V • ' > > & J U ? - 7 7 ° - - ^ > T ^ □ =1 > fc° z l — ^ ,«PD78P312A ü , ,uPD78312A<7 |*]/I-^X 7 ROM £ >7 > • M A PROM £ fciiE P R O M f c ë

vw polo

Abstract: 7A SF CQ MEF PD7821 an7q mc 13516 UPD78214 PD78218A 5532 ic sub P65a
Contextual Info: 1 — • s S '— h m jü fltm æ o s M O S In te g ra te d C irc u it ¿¿PD7 8 2 1 7 A , 7 8 2 1 8 A § //PD 78217A , 78218A i, i* S , m îÆ OTîÆ^IOTÎï * '! ! , ? I T - T 0 / ï 'J ^ m C P U £ Î l i c L tz 7 8 K /I v U - X ( 7 » nnn T", ¿¡PD78213, 78214O T > ï >J

NTP 7100

Abstract: UM 7107 17p107 7107 dmm HTR 512-1 IR LFN C712 PC-9800V IC-8311A
Contextual Info: M O S J M J I0 S& M O S Integ rated C ircu it P D 1 7 1 0 7 L ,1 7 1 0 7 L ÎA 4 fcf'y h • 7 7 °#T-f //PD17107L, 17107LCA) It, ROM I K ' U b 512 X hP - 7 16 fcf'y h), RAM 16 x 4 b'>y h, I/O tH— h 11 □ — ^ T-To U J M C /i I ' 1 « t z m t m 'M 2 ^ * W :<M£TZ>m£h^<n