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    Microchip Technology Inc LXP1002-23-4

    SI PIN NON HERMETIC EPSM SMT
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    DigiKey LXP1002-23-4 Bulk 500 1
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    Microchip Technology Inc LXP1002-23-4 7,833 18 Weeks
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    Microchip Technology Inc LXP1000-23-2

    SI PIN NON HERMETIC EPSM SMT
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    DigiKey LXP1000-23-2 Bulk 484 1
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    Microchip Technology Inc LXP1000-23-2 27,566 18 Weeks
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    Microchip Technology Inc LXP1004-23-2

    SI PIN NON HERMETIC PLASTIC SMT
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    DigiKey LXP1004-23-2 Bulk 480 1
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    Mouser Electronics LXP1004-23-2 500
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    Microchip Technology Inc LXP1004-23-2 1,939 30 Weeks
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    NAC LXP1004-23-2 76
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    Avnet Silica LXP1004-23-2 32 Weeks 500
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    Microchip Technology Inc LXP1004-23-0

    SI PIN NON HERMETIC PLASTIC SMT
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    DigiKey LXP1004-23-0 Bag 126 1
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    Microchip Technology Inc LXP1004-23-0 1,227 18 Weeks
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    NAC LXP1004-23-0 92
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    Microchip Technology Inc LXP1002-23-0

    SI PIN NON HERMETIC EPSM SMT
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    DigiKey LXP1002-23-0 Bulk 62 1
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    Avnet Americas LXP1002-23-0 Reel 18 Weeks 500
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    Microchip Technology Inc LXP1002-23-0 13,485 18 Weeks
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    NAC LXP1002-23-0 92
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    Master Electronics LXP1002-23-0
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    XP100 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XP1000 Mimix Broadband 17.0-24.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1000 Mimix Broadband 17.0-24.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1001 Mimix Broadband 26.0-40.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1001000-01 Lantronix Interface, the most compact, integrated solution available to web-enable any edge device Original PDF
    XP1001000-03 Lantronix Ethernet, Standard XPort Original PDF
    XP1001000-05R Lantronix Integrated Circuits (ICs) - Embedded - Microcontroller, Microprocessor, FPGA Modules - XPORT ROHS EXTENDED TEMP. -40 TO Original PDF
    XP1001000M-05R Lantronix Integrated Circuits (ICs) - Embedded - Microcontroller, Microprocessor, FPGA Modules - XPORT XE ROHS EXTENDED TEMP MODB Original PDF
    XP100100K-01 Lantronix Interface, the most compact, integrated solution available to web-enable any edge device Original PDF
    XP100100S-01 Lantronix Interface, the most compact, integrated solution available to web-enable any edge device Original PDF
    XP10010NMK-01 Lantronix Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - XPORT UNIVERSAL DEMO BOARD (MODU Original PDF
    XP1002 Mimix Broadband 26.0-40.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1002 Mullard Quick Reference Guide 1977/78 Scan PDF
    XP1002000-01 Lantronix Interface, the most compact, integrated solution available to web-enable any edge device Original PDF
    XP1002000-03 Lantronix Ethernet, Standard XPort with 256-bit AES encryption Original PDF
    XP1002000-05R Lantronix Integrated Circuits (ICs) - Embedded - Microcontroller, Microprocessor, FPGA Modules - XPORT ROHS EXTENDED TEMP. -40 TO Original PDF
    XP100200K-03 Lantronix Development Tools, XPort Development Kit with encryption Original PDF
    XP100200S-01 Lantronix Interface, the most compact, integrated solution available to web-enable any edge device Original PDF
    XP100200S-03 Lantronix Ethernet, XPort Sample with encryption Original PDF
    XP100200S-05R Lantronix Integrated Circuits (ICs) - Embedded - Microcontroller, Microprocessor, FPGA Modules - XPORT ROHS SAMPLE EXTENDED TEMP. Original PDF
    XP1003 Mimix Broadband 27.0-35.0 GHz GaAs MMIC Power Amplifier Original PDF

    XP100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XP1006-BD

    Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
    Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech PDF

    P1014

    Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		APH478 P1014 14-Apr-06 XP1006/7 MIL-STD-883 XP1014 I0005129 P1014 xp1014 84-1LMI XP1006 bonding GHz HPA PDF

    p1014

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		01-Nov-06 APH478 P1014 XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1 PDF

    Chip Advanced Tech

    Abstract: XP1006 XP1006 bonding
    Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		XP1014-BD XP1006 MIL-STD-883 01-Sep-10 XP1014 I0005129 Chip Advanced Tech XP1006 bonding PDF

    Untitled

    Abstract: No abstract text available
    Text: XP1005-BD Power Amplifier 35.0-43.0 GHz Rev. V2 Features Chip Device Layout •     Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power


    Original     		XP1005-BD Mil-Std-883 PDF

    P1014

    Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1014-BD 03-Aug-07 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000V XP1014-BD-EV1 XP1014 P1014 DM6030HK TS3332LD XP1014-BD-000V XP1006 bonding PDF

    XP1006-FA-0N00

    Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA
    Text: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		XP1006-FA 01-Sep-10 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA PDF

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		APH478 P1014 01-Nov-06 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 May 2005 - Rev 05-May-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		APH478 P1014 05-May-05 XP1006/7 MIL-STD-883 XP1014 I0004966 PDF

    xp1014

    Abstract: P1014-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		14-Nov-08 P1014-BD XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000V XP1014-BD-EV1 PDF

    XP1005

    Abstract: XP1005-BD XP1005-BD-000V XP1005-BD-EV1
    Text: XP1005-BD Power Amplifier 35.0-43.0 GHz Rev. V2 Features Chip Device Layout •     Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power


    Original     		XP1005-BD Mil-Std-883 XP1005 XP1005-BD XP1005-BD-000V XP1005-BD-EV1 PDF

    XP1005

    Abstract: No abstract text available
    Text: XP1005 page 1 2 3 4 5 6 sheet 1 2 3 4 5 FP date 1970.03 1969.04 1970.03 1968.03 1968.03 1999.09.09


    Original     		XP1005 XP1005 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 August 2005 - Rev 03-Aug-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency


    Original     		03-Aug-05 APH478 P1014 XP1014 I0005129 XP1006/7 MIL-STD-883 PDF

    XP1001000-03R

    Abstract: XP1001000M-03R XP1004 xport XE lantronix XPort XP1001001-03R 910-430 XP1001 XP1001001 XP100200K-03
    Text: XPort Embedded Device Server Minimal engineering effort required to web-enable virtually any electronic device Remote command and control of edge devices EMC/EMI-compliant; RoHS-compliant Everything you need – all in a single RJ45 package Build Network Connectivity into Your Products,


    Original     		DGS2500 XP1001000-03R XP1001000M-03R XP1004 xport XE lantronix XPort XP1001001-03R 910-430 XP1001 XP1001001 XP100200K-03 PDF

    U1001

    Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
    Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		U1001 13-May-05 MIL-STD-883 U1001 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter PDF

    P1000 diode

    Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain


    Original     		P1000 05-May-05 MIL-STD-883 P1000 diode diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000 PDF

    38TX0768-QB

    Abstract: 38TX0768-QB-0L00 38TX0768-QB-0L0T 38TX0768-QB-EV1 XP1005
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm 38TX0768-QB October 2006 - Rev 05-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level


    Original     		38TX0768-QB 05-Oct-06 38TX0768-QB 38TX0768-QB-0L00 38TX0768-QB-0L0T 38TX0768-QB-EV1 XP1005 PDF

    XP1005

    Abstract: XU1006-QB XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1
    Text: 36.0-42.0 GHz GaAs Transmitter QFN, 7x7 mm U1006-QB October 2006 - Rev 19-Oct-06 Features Sub-harmonic, Image Reject Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +17.0 dBm Output Third Order Intercept OIP3 +2.0 dBm LO Drive Level 5.0 dB Conversion Gain


    Original     		U1006-QB 19-Oct-06 XU1006-QB XP1005 XU1006-QB-0L00 XU1006-QB-0L0T XU1006-QB-EV1 PDF

    inductance R600

    Abstract: No abstract text available
    Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection


    Original     		01-Mar-05 MIL-STD-883 inductance R600 PDF

    pHEMT transistor MTBF

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match


    Original     		01-Mar-05 P1000P1 XP1000 pHEMT transistor MTBF PDF

    tanaka gold wire

    Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip PDF

    B1000

    Abstract: Mimix xb1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		10-May-03 B1000 MIL-STD-883 Mimix xb1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32.0-45.0 GHz GaAs MMIC Transmitter U1004 August 2006 - Rev 02-Aug-06 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept OIP3 +4.0 dBm LO Drive Level 5.0 dB Conversion Gain 100% On-Wafer RF and DC Testing


    Original     		U1004 02-Aug-06 MIL-STD-883 PDF

    JEDEC B14-38

    Abstract: PIN BASE B14-38 electronic 40 w tube light circuit dynode XP1005 B14-38 photo multiplier tube radiation tube FE1001 tungsten electrodes
    Text: XP1005 T he tube is intended fo r u se in a p p licatio n s su ch as in f ra -r e d telec o m m u n ic atio n and ran g in g and in o p tical in s tru m e n ts o p e ra tin g in th e fa r re d and n e a r in f r a ­ re d re g io n . QUICK REFERENCE DATA S p e c tra l re s p o n se


    OCR Scan     		XP1005 14-pin B14-38) max52 FE1001 JEDEC B14-38 PIN BASE B14-38 electronic 40 w tube light circuit dynode XP1005 B14-38 photo multiplier tube radiation tube tungsten electrodes PDF