XNOR TTL Search Results

XNOR TTL Result Highlights (5)

Part	Manufacturer	Description
MM54C901J/883	Rochester Electronics LLC	54C901 - Hex Inverting TTL Buffer
74141PC	Rochester Electronics LLC	74141 - Display Driver, TTL, PDIP16
DM8136N	Rochester Electronics LLC	DM8136 - Identity Comparator, TTL, PDIP16
9317CDC	Rochester Electronics LLC	9317 - Decoder/Driver, TTL, CDIP16
5496J/B	Rochester Electronics LLC	5496 - Shift Register, 5-Bit, TTL

XNOR TTL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
xnor gate motorola Abstract: QUAD XNOR BR1339 MC74LCX810 2 input XNOR GATE xnor ttl Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MC74LCX810 Low-Voltage CMOS Quad 2-Input XNOR Gate With 5V-Tolerant Inputs The MC74LCX810 is a high performance, quad 2–input XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible	Original	MC74LCX810 MC74LCX810 MC74LCX810/D BR1339 xnor gate motorola QUAD XNOR 2 input XNOR GATE xnor ttl	PDF
QUAD XNOR Abstract: MC74LCX810 Text: Product Preview Low-Voltage CMOS Quad 2-Input XNOR Gate MC74LCX810 With 5V–Tolerant Inputs The MC74LCX810 is a high performance, quad 2–input XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers	Original	MC74LCX810 MC74LCX810 r14525 MC74LCX810/D QUAD XNOR	PDF
TRANSISTOR SMD MARKING CODE WM Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MC74LCX810 Low-Voltage CMOS Quad 2-Input XNOR Gate With 5V-Tolerant Inputs The MC74LCX810 is a high performance, quad 2–input XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible	Original	MC74LCX810 MC74LCX810 BR1339 TRANSISTOR SMD MARKING CODE WM	PDF
ecl nand Logic Family Specifications Abstract: No abstract text available Text: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 NB7L86M: 2.5 V / 3.3 V, 12 Gb/s Differential Clock/Data Smart Gate 2:1 Mux, AND/NAND, OR/NOR, XOR/XNOR w/CML Output and Internal Termination For complete documentation, see the data sheet	Original	NB7L86M: NB7L86M NB7L86MMNR2G QFN-16 QFN-16 NB7L86MMNG ecl nand Logic Family Specifications	PDF
xnor ttl Abstract: xnor gate ttl QUAD XNOR B303 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M C 74LC X 810 L o w -V o lta g e CMOS Quad 2 -In p u t XN O R G a te With 5V-Tolerant Inputs The MC74LCX810 is a high performance, quad 2 -in put XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible	OCR Scan	MC74LCX810 xnor ttl xnor gate ttl QUAD XNOR B303	PDF
XOR Gates Abstract: 8 bit XOR Gates 4 input, 4 D flip-flops 2-bit adder layout schematic XOR Gates TTL ALU of 4 bit adder and subtractor ALU of 4 bit adder and subtractor CMOS XNOR Gates Nand gate Crystal Oscillator high frequency tristate xnor gate Text: Standard Cell General Features • • • • • 0.8µm single poly, double metal CMOS technology Operating voltage 5V/3V Propagation delay of 2-input NAND with fanout=2 – 0.3ns for 5V high performance – 0.5ns for 5V high density – 0.5ns for 3V high performance	Original	64words 64bits/word 32bits/word 64words 128words 32Kbits 128bits 128Kbits XOR Gates 8 bit XOR Gates 4 input, 4 D flip-flops 2-bit adder layout schematic XOR Gates TTL ALU of 4 bit adder and subtractor ALU of 4 bit adder and subtractor CMOS XNOR Gates Nand gate Crystal Oscillator high frequency tristate xnor gate	PDF
schematic of TTL XOR Gates Abstract: TTL XOR Gates ttl 2-bit half adder cmos XOR Gates schematic XOR Gates xnor ttl ALU of 4 bit adder and subtractor "XOR Gates" XNOR GATE cmos gate nand nor xor Text: 0.8µm Standard Cell General Features • • • • 0.8µm single poly, double metal CMOS technology Operating voltage: 5V/3V Propagation delay of 2-input NAND with fanout=2 – 0.3ns for 5V high performance – 0.5ns for 5V high density – 0.5ns for 3V high performance	Original		PDF
MB81F643242B-10FN-X-S Abstract: MB81F643242B-10FN-X Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.3E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B-10FN-X CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing	Original	MB81F643242B-10FN-X 288-Word MB81F643242B 32-bit MB81F643242B-10FN-X-S MB81F643242B-10FN-X	PDF
MB81N643289 Abstract: Dynamic Memory Refresh Controller Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11401-2E MEMORY CMOS 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MB81N643289-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT Fast Cycle Random Access Memory FCRAM with Double Data Rate • DESCRIPTION The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864	Original	DS05-11401-2E MB81N643289-50/-60 144-WORD MB81N643289 32-bit Dynamic Memory Refresh Controller	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate	Original	DS05-11402-1E MB81P643287-50/-60 144-WORD MB81P643287 32-bit F0005	PDF
MB81N643289 Abstract: mikroelektronik DDR Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MB81N643289-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT Fast Cycle Random Access Memory FCRAM with Double Data Rate • DESCRIPTION The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864	Original	MB81N643289-50/-60 144-WORD MB81N643289 32-bit MB81Nwith F0003 mikroelektronik DDR	PDF
AE4E Abstract: MB81F643242B-70 Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B-70/-10 CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing	Original	MB81F643242B-70/-10 288-Word MB81F643242B 32-bit AE4E MB81F643242B-70	PDF
MB81P643287 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-2E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate	Original	DS05-11402-2E MB81P643287-50/-60 144-WORD MB81P643287 32-bit	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11401-1E MEMORY CMOS 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MB81N643289-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT Fast Cycle Random Access Memory FCRAM with Double Data Rate • DESCRIPTION The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864	Original	DS05-11401-1E MB81N643289-50/-60 144-WORD MB81N643289 32-bit	PDF

MB81P643287 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION	Original	MB81P643287-50/-60 144-WORD MB81P643287 32-bit F0003	PDF
Verilog code of 1-bit full subtractor Abstract: Verilog code "1-bit full subtractor" verilog hdl code for D Flip flop accumulator verilog code for jk flip flop vhdl code for barrel shifter verilog code for 64 bit barrel shifter XOR Gates 5D208 8 BIT ALU design with verilog code full adder using x-OR and NAND gate Text: Full Custom Design Expertise • • • • • • • • • • Microcontroller DSP PC peripheral Remote controller Telephone Communications Speech synthesizer Melody/Rhythm Home appliances Hand-held LCD games Process Process Operating Voltage 7.0µm TOCMOS	Original	2V/24V 0V/30V Verilog code of 1-bit full subtractor Verilog code "1-bit full subtractor" verilog hdl code for D Flip flop accumulator verilog code for jk flip flop vhdl code for barrel shifter verilog code for 64 bit barrel shifter XOR Gates 5D208 8 BIT ALU design with verilog code full adder using x-OR and NAND gate	PDF
2220G8C Abstract: No abstract text available Text: TRww TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 3 2 Bit, 20MHz 1 x 128 Bit, 20MHz The TM C 2220 20M H z, TTL com patible CMOS is composed of four separate 1 x 32 correlator The correlation scores of the four modules are com bined and output on tw o separate parallel,	OCR Scan	TMC2220/TMC2221 20MHz 2220G8C	PDF
74F2960 Abstract: No abstract text available Text: MC74F2960/ Am2960 MC74F2960A Advance Information E R R O R D E T E C T IO N A N D C O R R E C T IO N C IR C U IT E R R O R D E T E C T IO N A N D C O R R E C T IO N C IR C U IT A D V A N C E D LOW POW ER SCH O TTK Y The MC74F2960 w ill be dual m arked w ith th e A M D p art num ber	OCR Scan	MC74F2960/ Am2960 MC74F2960A MC74F2960 MC74F2960A 74F2960	PDF
D2 Package diagram Abstract: ds1012s DS1012 DS1012M DS1012Z Text: APPLICATION NOTE 1 Application Note 1 Pulse–Doublers Using the DS1012 Delay Line with Logic FEATURES • All Silicon Delay Line with logic • Low Power Operation: 53 µW max quiescent mode • Two input device/four independent buffered delays • TTL/CMOS compatible	Original	DS1012 DS101SE DS1012 D2 Package diagram ds1012s DS1012M DS1012Z	PDF
RAS 2415 Abstract: hamming code mc74f MC74F2960A Text: Order this data sheet by MC74F2960/D M MOTOROLA MC74F2960/ Am2960 MC74F2960A SEM ICO N D U CTO RS P.O BO X 20912 • P H O EN IX , A R IZ O N A 85036 A d v an ce In fo rm atio n E R R O R D ET EC T IO N A N D C O R R E C T IO N C IR C U IT E R R O R D E T E C T IO N A N D C O R R E C T I O N C IR C U I T	OCR Scan	MC74F2960/D MC74F2960/ Am2960 MC74F2960A C74F2960 74F2960A C6460B RAS 2415 hamming code mc74f MC74F2960A	PDF
Untitled Abstract: No abstract text available Text: Signetics 2960 Error D etection a n d Correction EDC Unit Product Specification Logic Products FEATURES • Boosts Memory Reliability — Corrects all single-bit errors. Detects all double and some triple-bit errors. Reliability of dynamic RAM systems is	OCR Scan	60-fold. 64-Bit L003750S	PDF
Untitled Abstract: No abstract text available Text: DS1012 PRELIMINARY D S 10 1 2 2- in -1 Sub-M iniature Silicon Delay Line with Logic DALLAS SEMICONDUCTOR FEATURES PIN DESCRIPTION • All-silicon time delay IN1 [ • 53 uW max. CMOS quiescent mode O U T3[ O U T l[ • Surface mount 8-pin mini-SOIC and standard	OCR Scan	DS1012 DS1012	PDF
AOX2053 Abstract: No abstract text available Text: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells	OCR Scan	Am3550 WFR02682 AOX2053	PDF
OS1012 Abstract: No abstract text available Text: DS1012 2-in-1 Sub-Miniature Silicon Delay Line with Logic DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT • All-silicon tim e delay • Surface m ount 8-pin m ini-SOIC and standard 8-pin DIP L 1 B —i OUT3 C 2 7 H 1N2 OUT 1 3 6 D OUT2 4 5 J OUT4 INI • 53 \iW max. CM OS quiescent mode	OCR Scan	DS1012 DS1012M DS1012-2, DS1012-4, DS1012-5 OS1012	PDF

XNOR TTL Search Results

XNOR TTL Result Highlights (5)

XNOR TTL Datasheets Context Search

xnor gate motorola

QUAD XNOR

TRANSISTOR SMD MARKING CODE WM

ecl nand Logic Family Specifications

xnor ttl

XOR Gates

schematic of TTL XOR Gates

MB81F643242B-10FN-X-S

MB81N643289

Untitled

MB81N643289

AE4E

MB81P643287

Untitled

MB81P643287

Verilog code of 1-bit full subtractor

2220G8C

74F2960

D2 Package diagram

RAS 2415

Untitled

Untitled

AOX2053

OS1012