transistor application
Abstract: transistor XMFP1-M3 power transistor 23 transistor marking transistor mesfet low noise transistor "Power transistor" mesfet low noise DECT 6.0
Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor 1.5 0.4 0.65 (2) (3) B 2.9 1.9 A (4) 0.8 0.3 (1) XMFS2-M1 Pin (1):Source (2):Gate (3):Source (4):Drain Marking A : Part No. B : Lot No. in mm Type Application Gain
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transistor marking E39
Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.
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OT-143)
transistor marking E39
E1491
E407 transistor
E391
E308
E138
e696
E302
e798
marking E72
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Untitled
Abstract: No abstract text available
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS SMALL SIGNAL FET’S XMFS Series FEATURES • Low noise figure ■ Excellent associated gain APPLICATIONS ■ Low noise applications up to c-band 6GHz ■ WLAN, WLL, DBS tuner/converter, GPS ■ Low noise amplifiers or oscillator circuits
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100mA
0-35-E,
CG01-I
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K 1358 fet transistor
Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
Text: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。
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O35webPDF
CGRM39
RMCR03
1000pF
4700pF
K 1358 fet transistor
28428
A 27631 transistor
xmfp1-m3
XMFP3-M3
064110
9-8318
GaAS fet sot89
S0731
65851
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XMFS2
Abstract: TS12 TS16 TS24 TS30
Text: ICs for Communications Interworking Element IWE8 PXB 4220 E Version 3.1 Connecting the IWE8 to the Quad E1/T1 Frame and Line Interface Component QFALC PEB 22554 Application Note 07.98 DS 1 PXB 4220 E CONFIDENTIAL Revision History: Current Version: 07.98 Previous Version:
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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gaas fet marking B
Abstract: marking K gaas fet gaas fet marking a marking A 04dB murata devices marking
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS SMALL SIGNAL FET’S XMFS Series FEATURES • Low noise figure ■ Excellent associated gain APPLICATIONS ■ Low noise applications up to c-band 6GHz ■ WLAN, WLL, DBS tuner/converter, GPS ■ Low noise amplifiers or oscillator circuits
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100mA
0-35-E,
CG01-J
gaas fet marking B
marking K gaas fet
gaas fet marking a
marking A
04dB
murata devices marking
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gaas fet marking B
Abstract: part marking id gaas fet marking a marking .A Frequency Devices marking A marking K gaas fet Field Effect Transistors
Text: HIGH FREQUENCY DEVICES GAAS FIELD EFFECT TRANSISTORS SMALL SIGNAL FET’S XMFS Series FEATURES • Low noise figure ■ Excellent associated gain APPLICATIONS ■ Low noise applications up to c-band 6GHz ■ WLAN, WLL, DBS tuner/converter, GPS ■ Low noise amplifiers or oscillator circuits
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100mA
0-35-E,
CG01-H
gaas fet marking B
part marking id
gaas fet marking a
marking .A
Frequency Devices
marking A
marking K gaas fet
Field Effect Transistors
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DFY2R902
Abstract: DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9
Text: This is the PDF file of catalog No.K09E-4. No.K09E4.pdf 99.8.31 Murata Products for Mobile Communications GSM DCS1800 PCN E-TACS DECT CT-2 PCS (IS136) AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 PDC800 PDC1500 NTACS/CDMA PHS GSM CDMA E-TACS/AMPS PHS DECT
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K09E-4.
K09E4
DCS1800
IS136)
CDMA800
ISM900
PDC800
PDC1500
DFY2R902
DFY2R902CR947BHG
MuRata Gigafil
XMFP1-M3
DFY21R88
DFY2R902CR947
DFC3r
LFJ30-03
Ferrite Circulators at 15 ghz
MQE9
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transistor XM
Abstract: transistor power transistor k 30 transistor TRANSISTOR P 3 transistor mesfet transistor l 2 xmfp1-m3
Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor r •■ i m cd (3l (2 ) '~'B - (4) m -m l XMFS2-M1 Pm M arking (1) So urce 12V. G a te (3): Source (4) : Dram A : Part No. B . Lo i No. in mm Gain (dB) Minimum Noise Figure
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OCR Scan
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AS15D
Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
Text: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB
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OCR Scan
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T-143)
OT-89)
Po--23dBm
LDA36A1907A
ANACLC1R90J025AAA
R89J020AAa
ANACGC1R48U024AAC
AS15D
sot89 fet
GaAs FET sot89
FET SOT89
ANCLC2R45J100AAA
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marking A
Abstract: No abstract text available
Text: OTHER PRODUCTS G a A s field e ffe ct tra n sisto rs SMALL SIGNAL FET'S m u f i n tn /hAom tortA fie e tw u ts XMFS Series FEATURES i • Low noise figure ■ Excellent associated gain APPLICATIONS * ■ Low noise applications up to c-band 6 G H z ■ W LAN, WLL, DB S tuner/converter, G PS
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OCR Scan
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0-35-E.
marking A
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