X777777 Search Results

mJI 1032

Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Contextual Info: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a

TC55V4376FF

Abstract: TC55V4376FF-100
Contextual Info: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

NEC 424400

Abstract: NEC 424400-70 424400 60 424400 80 uPD424400 424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /IPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

am79c940

Contextual Info: a Advanced Micro Devices Am79C940 Media Access Controller for Ethernet MACE DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ Integrated Controller with 10BASE-T transceiver and AUI port Supports IEEE 802.3/ANSI 8802-3 and Ethernet standards

Contextual Info: A m 79C 900 In t e g r a te d L o c a l A re a C o m m u n ic a tio n s C ontroller ILACC™ Distinctive Characteristics. 1-51 General Description. 1-51

dp8477

Abstract: PC87560UBD nec 8237 ex hcl notebook l19 MOTHERBOARD CIRCUIT diagram N82077 8259 interface with 8051 Peripheral FXA16 ic 8038 APPLICATIONS PC87570 DS1287
Contextual Info: P R E L IM IN A R Y N a tiona l Semiconductor November 1997 PC87560UBD — PCI System I/O 1.0 General Description 2.0 Features The PC87560 is a highly integrated IC which incorporates PCI Interface, Bus Mastering Fast IDE Controller, Universal Serial Bus USB Host Controller, commonly-used I/O pe­

Contextual Info: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD 4264160, 4265160 64 M BIT DYNAMIC RAM 4M -W O R D BY 16-BIT, FAST PAGE MODE Description The /iPD4264160, 4265160 are 4,194,304 words by 16 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: HM-65642/883 S 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random

NEC 424400-80

Abstract: NEC 424400-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The JUPD424400 is a 1,048,576 w ords by 4 bits CMOS dynam ic RAM. The fast page mode capability realizes high speed access and low power consum ption.

424260-60

Abstract: 4275a5
Contextual Info: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode

Contextual Info: Preliminary CAT33C704 4K-Bit Secure Access Serial E2PROM FEATURES • Single 3V Supply ■ Low Power Consumption: Active: 3 mA Standby: 250 |iA ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ Memory Pointer WRITE Protection ■ 100,000 Program/Erase Cycles

TC55V4336FFI-83

Abstract: 032J
Contextual Info: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: Preliminary CAT35C704 4K-Bit Secure Access Serial E2PROM FEATURES • Single 5V Supply ■ Operating Frequency: D C -3M H z ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ Low Power Consumption: -A ctive: 3 mA -S tandby: 250 jiA ■ Memory Pointer WRITE Protection

HM53461ZP-12

Abstract: HM53461ZP-10 53461P
Contextual Info: HM53461 Series 65,536-word x 4-bit Multiport CMOS Video RAM • DESCRIPTION H M 53461P Series The HM53461 is a 262,144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4-bit Serial A ccess Memory SA M port. The SA M port is connected to an internal 1,024-bit data register through a 256-word

HM53461ZP

Contextual Info: HM53461 Series 65,536-word x 4-bit Multiport CMOS Video RAM The HM53461 is a 262, 144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4bit Serial Access Memory SA M port. The SA M port is con­ nected to an internal 1,024-bit data register through a 256-word x

FAX508-836-4850

Abstract: hd1131
Contextual Info: ^EDI EDI2GG43264V 1M egabyte S yn ch ron o u s C ard Edge DIMM ELECTRONIC DESIGNS. INC. 4x64Kx32, 3.3 V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM 120 contacts Module, orga­

Contextual Info: •HYUNDAI 128K X H Y 6 3 8 1 0 0 FAST SRAM 8 -b it PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai’s high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,

mhtl

Contextual Info: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22,1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5221605 is offered in 2 banks for improved performance.

Contextual Info: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)

manchester

Abstract: rxc 50 NATIONAL DP8390 SL4000 LTAB
Contextual Info: STARLAN INTERFACE SL4000 PRELIMINARY PIN O UT FEATURES - 1 XTAL2- 2 19 - PSEL RXDOUT- 3 18 - RXDIN TXD IN -CTS -CRS - 4 RTS 5 7 -16 -15 -14 - LPBK - 8 13 - CD2 XTAL1 8X CLKIN o INTERFACE FOR THE LAN CONTROLLERS o UP TO 4 MBITS PER SECOND DATA RATE

PC87560UBD

Abstract: ic lcl 8038
Contextual Info: PRELIM INARY National Semiconductor November 1997 PC87560UBD — PCI System I/O 1.0 General Description 2.0 Features The PC87560 is a highly integrated IC which incorporates PCI Interface, Bus Mastering Fast IDE Controller, Universal Serial Bus USB) Host Controller, commonly-used I/O pe­