X32M Search Results

Contextual Info: POWER ENTRY MODULE EMI FILTERS SERIES INTRODUCTIONS SPECIFICATIONS 1. Power module incorporates an IEC connector, single or doublefuse IEC 5 x 20mm or 3AG 6.3 x32mm holder, optional voltage selector switch and double-pole power switch, plus an EMI filter

Contextual Info: DENSE-PAC MICROSYSTEMS 32 Megabit CMOS SRAM D PS1M X 32M L/D P S1M X 32M W PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The DPS1M X32M L/X32MW is a 1 Meg x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high perform ance computers and digital signal processing

Contextual Info: DENSE-PAC MICROSYSTEMS 32 Megabit C M O S SRAM D P S1M X32M L/D PS1M X32M W PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The D P S 1 M X 3 2 M L /D P S 1 M X 3 2 M W is a 1 M e g x 32 high density, high-speed Static Random Access M em ory SRAM module, intended

Contextual Info: MITSUBISHI M EM ORY CARD D Y N A M I C R A M CARDS 1x512/ x32M DRAM Card 2x512/Oc326/i DRAM Card M F12M 1-L57A TXX" M F14M 1-L57ATXX Connector Type Two-piece 88-pin S D E S C R IP T IO N These DRAM • Extend CARDs are developed based on refresh mode is available. ( 1 2 8 m s / 1024

Contextual Info: Type LPA-01 In-Line Fuse Holder ¼” x 1¼” 6.3 x 32mm Fuses www.optifuse.com (619) 593-5050 Ratings: Part number format Fuse Type: ¼” x 1¼” (6.3 x32mm) LPA-01X-##Z Electrical Rating: 20A 32VDC where X = Body color Body: Nylon / Polypropylene ## = Wire gauge

LPA-08

Contextual Info: Type LPA-08 In-Line Fuse Holder ¼” x 1¼” 6.3 x 32mm Fuses www.optifuse.com (619) 593-5050 Ratings: Part number format Fuse Type: ¼” x 1¼” (6.3 x32mm) LPA-08X-##Z Electrical Rating: 20A 32VDC where X = Body color Body: Polycarbonate ## = Wire gauge

RATING30A

Abstract: LPA-03Y
Contextual Info: Type LPA-03 In-Line Fuse Holder ¼” x 1¼” 6.3 x 30mm Fuses Splashproof Ratings: Fuse Type: ¼” x 1¼” (6.3 x 30mm or 6.3 x32mm) Electrical Rating: 30A 32VDC Body: PVC Contacts: Brass Available for wire sizes: # 10 ~ #22 AWG www.optifuse.com (619) 593-5050

03EB3S

Abstract: 06EB3 SA1015 10EB3S 03EB3 03EB3A 220-240V UL-10A
Contextual Info: POWER ENTRY MODULE EMI FILTERS SERIES INTRODUCTIONS SPECIFICATIONS 1. Power module incorporates an IEC connector, single or doublefuse IEC 5 x 20mm or 3AG 6.3 x32mm holder, optional voltage selector switch and double-pole power switch, plus an EMI filter

SDHC physical layer

Abstract: SONY GERMANIUM TRANSISTOR FAT32 8gb toshiba memory silicon power sdhc class 10 Silicon SDHC silicon power 8GB
Contextual Info: EYE 12 December 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 173 CONTENTS New Products Toshiba Introduces World's Highest Class of SDHC Card to the World Market .2 INFORMATION Toshiba, Sony and NEC Electronics Unveil Mass

MICRON diode 2u

Abstract: 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n
Contextual Info: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES

Contextual Info: S E M I C O N D U C T O R Revised M arch 1999 TM 74LCX32 Low Voltage Quad 2-Input OR Gate with 5V Tolerant Inputs General Description Features The LCX32 contains fo u r 2-input O R gates. The inputs to l­ erate voltages up to 7V allowing the interface of 5 V sys­

276 f16n

Abstract: vc 4050 PT7C PT7C4050 2n 4409 NRZ clock recovery
Contextual Info: Data Sheet PT7C4050 PLL with Integrated VCXO |

Contextual Info: Revised March 1999 SEMICONDUCTOR TM 74LCX32 Low Voltage Quad 2-Input OR Gate with 5V Tolerant Inputs General Description Features The LCX32 contains fo u r 2-input O R gates. The inputs to l­ erate voltages up to 7V allowing the interface of 5 V sys­ tem s to 3V system s.

AL016J

Abstract: GL128N Al016 AM29LV800 AL016JT diode 27h AM29F400 JEP-137
Contextual Info: Quick Guide to Common Flash Interface Application Note By: Frank Cirimele 1. Introduction Common Flash Interface, or CFI, is a standard introduced by the Joint Electron Device Engineering Council JEDEC to allow in-system or programmer reading of Flash device characteristics, which is equivalent to

Contextual Info: Data Sheet: JN5148-001 IEEE802.15.4 Wireless Microcontroller Features: Transceiver Overview The JN5148-001 is an ultra low power, high performance wireless microcontroller targeted at JenNet and ZigBee PRO networking applications. The device features an enhanced 32-bit RISC processor

QG5100MCH

Abstract: BIOS Specification Marking code mps DMA12 T9400 i960 mc errata intel Chipset CRB Schematics TD10 srid
Contextual Info: Intel 5100 Memory Controller Hub Chipset Specification Update April 2010 Revision 010US Notice: The Intel® 5100 Memory Controller Hub Chipset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are

Contextual Info: UL Series Red Laser Diode Module Part No: UL5-0.4G-650 Specification OPTICAL Wavelength 650 nm Optical Output Power <0.4 mW Stability <1% Wavelength Drift 0.2nm/°C Noise 20MHz Bandwidth <0.5% RMS Laser Class Class I (IEC-European) Laser Operation Continuous

Am29BDD160GB64C

Contextual Info: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

am29f date code markings

Abstract: am29lv date code markings Am29BDD160GB64C
Contextual Info: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

smd diode schottky code marking 2U

Abstract: smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U
Contextual Info: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES

Jet 10A 250v fuse

Abstract: Jet 2A 250v fuse FUSE JET Jet bel 250V 2A fast blow fuse 3AP 15 Jet 12.5A 250v fuse Jet fuse, 12.5A Jet 15A 250v fuse
Contextual Info: Type 3AG / 3AP 6 x 32 mm Glass Tube RoHS 6 Compliant Fast Blow Fuse Series 3AG May 2012D Pb 3AG / 3AP Series, 6 x 32mm Fast Blow Fuse Description x32mm Fast Blow,glass tube body cartridge fuse designed, approved and complied with UL and CSA standard 248-14.

Contextual Info: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks

FAT32

Abstract: SD-HC008GT4
Contextual Info: EYE 12 December 2006 東芝半導体情報誌アイ 2006年12月号 VOLUME 173 CONTENTS 新製品情報 大容量8ＧＢのＳＤＨＣメモリカード （クラス4対応高速タイプ）. 2 INFORMATION 45ｎｍ世代の高性能システムLSI量産技術を

PQR080

Abstract: JC42 S29CD016G Am29BDD160GB64C
Contextual Info: Am29BDD160G Data Sheet For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifications and ordering information. The following document contains information on Spansion memory products. Although the doc-ument