Untitled
Abstract: No abstract text available
Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O Document Title 4Bank x 2M x 32bits 4Bank x2M x16 *2 Stack Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary Dec. 2004 Preliminary Mar. 2005 Preliminary
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256Mb
32bits
11Preliminary
256Mbit
8Mx16bit
HY5V52E
456bit
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xt90
Abstract: No abstract text available
Text: LR0G732208XB2JXT SHARP Preliminary Data Sheet 16M 2 x2M x 32 Flash Memory Module PIN ASSIGNMENT • High Performance C M O S Silicon Gate Process • Low Power Dissipation • All Inputs and Outputs Are Fully TTL And CM O S Compatible • Power Supplies:
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80-pin
LH28F160S5
56-pin
LR0G732208XB2JXT
LR0G732208XB2JXT
LR0G732208XB2J
XT-90
LR0G732208XB2JXT-120
xt90
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3222S
Abstract: No abstract text available
Text: LH59F3222S5TAA SHARP Preliminary Data Sheet 16M 2 x2M x 32 Flash Memory Module • All Inputs and Outputs Are Fully TTL And CMOS Compatible • Power Supplies: - 5.0 V +10% Normal Operation - 5.0 V +10% Programming • 90 ns And 120 ns Access Time DESCRIPTION
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80-pin
LH28F160S5,
56-pin
LH59F3222S5TAA
LH59F3222S5TAA
LH59F3222S5TAA-90
LH59F3222S5T
AA-12
3222S
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Untitled
Abstract: No abstract text available
Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O Document Title 4Bank x 2M x 32bits 4Bank x2M x16 *2 Stack Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jul. 2005 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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256Mb
32bits
11Preliminary
256Mbit
8Mx16bit
HY5V52E
456bit
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PDF
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E2EL-X1R5F1-M1
Abstract: Data Sheet X2M E2EL-X2E1-DSL E2EL-X1R5F1-M1L E2EL-C2MF2-L E2EL-X1R5F1-M3L E2EL-C1R5F2-M3L E2ELC1R5F1M3 inductive proximity sensor E2EL-X1R5F2-M3
Text: F502-EN2-04.book Seite 99 Dienstag, 26. Juli 2005 5:48 17 High Frequency Inductive Proximity Sensor E2EL Increased response frequency for high speed applications • • • • Max 5 kHz, switching frequency M8 or dia 6.5 mm housing Brass or stainless steel housing
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F502-EN2-04
D06E-EN-01
D-106
E2EL-X1R5F1-M1
Data Sheet X2M
E2EL-X2E1-DSL
E2EL-X1R5F1-M1L
E2EL-C2MF2-L
E2EL-X1R5F1-M3L
E2EL-C1R5F2-M3L
E2ELC1R5F1M3
inductive proximity sensor
E2EL-X1R5F2-M3
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PU3226
Abstract: 6 "transistor arrays" ic
Text: Power Transistor Arrays PU3226 PU3226 Silicon NPN Triple-Diffused Planar Type Power Amplifier Package Dimensions U nitlm m • Features • High D C c u rre n t gain Kfe and good lin earity • Low c o lle c to r -e m itte r sa tu ratio n v o lta g e (Vc£<Sao)
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PU3226
0Q17037
PU3226
6 "transistor arrays" ic
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ift6
Abstract: No abstract text available
Text: KIA8445K SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT VERTICAL DEFLECTION OUTPUT CIRCUIT FOR COLOR TELEVISION The KIA8445K is a power amplifier for driving a deflection circuit of a middle and large screen size color television. The KIA8445K combines the vertical output circuit and the
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KIA8445K
KIA8445K
50/60Hz
ift6
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2SB596
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)
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2SB596
2SD526.
100x100x2m
100X100X
2SB596
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LT3502
Abstract: No abstract text available
Text: DE M O CIR CU IT 1221 Q U ICK S TA R T GLT3502 U IDE LT3 5 0 2 1.1M H z , 5 0 0 m A , S te p -d o w n R e g u la to r in 2m m x2m m DF N DESCRIPTION Demonstration circuit 1221 is a monolithic step-dow n DC/DC sw itching regulator featuring the LT3502. The
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LT3502
LT3502.
LT3502
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SC14CVM2.4FLN
Abstract: No abstract text available
Text: ISOCOPI COMPONENTS LTD 4SE D • MflflbSlQ 00Q03S1 2 ■ ISO " p 2 5 - 3 l Preliminary Data Sheet Solid State Relays - 4 Pin SIP Package ISOCOHI ISRT44080 / ISRT46080 / ISRT44160 / ISRT46160 ISRX44080 / ISRX46080 / ISRX44160 / ISRX46160 • Features • •
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00Q03S1
ISRT44080
ISRT46080
ISRT44160
ISRT46160
ISRX44080
ISRX46080
ISRX44160
ISRX46160
400/600V
SC14CVM2.4FLN
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S202S02
Abstract: X2M ST S102SO2 S102SO1 S202S02 application triac control s202s02 S202S01 triac D 982 LR63705 slo2s02
Text: slo2sol/slo2s02/s202sol slo2sol/slo2s02 S202S01 /s202s02 9 Features /s202s02 SIP Type SSR for Medium Power Control • Outline Dimendons 1. High radiation resin mold package 2. RMS ON-state current Unit : mm * The metal parts marked * are common to terminal ~L,.
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slo2sol/slo2s02/s202sol
slo2sol/slo2s02
S202S01
/s202s02
s102s02/s202s02)
S102SO1/S102S02
/S202S02
4000Vrms)
S202S02
X2M ST
S102SO2
S102SO1
S202S02 application
triac control s202s02
triac D 982
LR63705
slo2s02
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SF10J41
Abstract: No abstract text available
Text: SF10G41 A,SF10J41A TO SHIBA SF10G41A, SF10J41A T O SH IB A TH YR ISTO R SILICON D IFFUSED TYPE Unit in mm M E D IU M P O W E R CO N TRO L A PPLIC A TIO N S. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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SF10G41
SF10J41A
SF10G41A,
--15mA
SF10G41A
SF10J41A
SF10J41
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T6164
Abstract: 8 bit 92112 XRT6165CP PE-65535 XR-T6165 XR-T6165CD XR-T6165CP XR-T6165ID XR-T6165IP Digital Alarm Clock 40 pin
Text: XR-T6165 C o d ire c tio n a l Digital D a ta P ro c e s s o r .the a n a lo g p lu s co m p a n y May 1 9 9 7 -3 FEATURES APPLICATIONS Low P ow er C M O S Technology C C IT T G .703 C om pliant 64kbps C odirectional Interface All R eceiver and T ra n sm itte r Inputs and O utputs are
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XR-T6165
125ns
64kbps
3422blÃ
3452bia
T6164
8 bit 92112
XRT6165CP
PE-65535
XR-T6165
XR-T6165CD
XR-T6165CP
XR-T6165ID
XR-T6165IP
Digital Alarm Clock 40 pin
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Untitled
Abstract: No abstract text available
Text: I SL5 4 4 0 9 , I SL5 4 4 1 0 Fe a t u r e s The I nt ersil I SL54409 and I SL54410 are Dual SPST Single Pole/ Single Throw swit ches t hat provide a very low dist ort ion audio pat h for a st ereo headphone and can be connect ed in a wired- OR configurat ion at t he
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SL54409
SL54410
5m-1994.
FN6983
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QXA2602
Abstract: CM1Y9777 TRIAC ACS 12 QXA2604 cm1y9775 X2M ST
Text: s Room thermostats with KNX communications 3 191 RDG100KN RDG160KN – For fan coil unit applications – For universal applications – For use with compressor in DX type equipment • • • • • • • • • • • • • • • • KNX bus communication S-mode and LTE mode
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RDG100KN
RDG160KN
RDG100KN,
RDG160KN
CE1N3191en
QXA2602
CM1Y9777
TRIAC ACS 12
QXA2604
cm1y9775
X2M ST
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EC10QS06
Abstract: No abstract text available
Text: SBD Type : EC10QS06 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly
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EC10QS06
100Volts
EC10QS06
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EC21QS04
Abstract: No abstract text available
Text: SBD Type : EC21QS04 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly
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EC21QS04
100Volts
EC21QS04
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EC10QS03L
Abstract: No abstract text available
Text: SBD Type : EC10QS03L OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly
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EC10QS03L
100Volts
EC10QS03L
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ZD 607
Abstract: npn power amplifier circuit fibre optic led Connector 52 pin led 503000E02M050 cons Data Sheet X2M din 5 connector F2R-NPN 503001E02M050
Text: fibre optic sensors F2 SERIES FIBRE OPTIC AMPLIFIER • Unique compact design • Response time 0.5ms • 0.03mm minimum object size detection • IP65 sealed • Sensitivity adjustment Dual LED setting • Light On/Dark On selectable • NPN or PNP types available
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660nm)
24VDC
503000E02M050
503001E02M050
ZD 607
npn power amplifier circuit
fibre optic led
Connector 52 pin led
503000E02M050
cons
Data Sheet X2M
din 5 connector
F2R-NPN
503001E02M050
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SM 12G45,SM 12J45,SM 12G45A,SM 12J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45, SM12J45, SM12G45A, SM12J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • • Repetitive Peak Off-StateVoltage : Vj R]y[ = 400, 600V R.M.S On-State Current
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12G45
12J45
12G45A
12J45A
SM12G45,
SM12J45,
SM12G45A,
SM12J45A
SM12G45
SM12G45A
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PDF
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Untitled
Abstract: No abstract text available
Text: SBD Type：EC10QS09 EC10QS09 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings
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TypeEC10QS09
EC10QS09
EC10QS09
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Untitled
Abstract: No abstract text available
Text: SBD Type：EC10QS04 EC10QS04 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings
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TypeEC10QS04
EC10QS04
EC10QS04
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PDF
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Untitled
Abstract: No abstract text available
Text: SBD Type：EC21QS03L EC21QS03L •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード ＳＢＤ Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification
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TypeEC21QS03L
EC21QS03L
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c2497
Abstract: 2SC2497 2SC2497A 2SA1096 2SA1096A
Text: P o w e r T ra n s is to rs 2S C 2497, 2SC2497A 2SC2497, 2 S C 2 4 9 7 A S ilico n NPN E p ita xia l P la n a r Type P ackage D im ensions AF Pow er A m plifier C om plem entary P air w ith 2 S A 1 0 9 6 . 2S A 1096A timi : no ai • Features • High co llccto r-em itter voltage Vcso
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2SC2497,
2SC2497A
2SA1096.
2SA1096A
O-126
2SC2497
Vet-10
c2497
2SC2497A
2SA1096
2SA1096A
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