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    lchb

    Abstract: Marking LCHB smd laya marking code NF SMD Diode smd regulator 5pin m5 smd marking laya transistor smd marking NA sot-23 marking UM smd 5pin
    Contextual Info: LP2985LV Micropower SOT, 150 mA Low-Noise Low-Dropout Regulator in SOT-23 and micro SMD packages for Applications with Output Voltages ≤ 2.3V Designed for Use with Very Low ESR Output Capacitors General Description Features The LP2985LV is a 150 mA, fixed-output voltage regulator


    Original     		LP2985LV OT-23 lchb Marking LCHB smd laya marking code NF SMD Diode smd regulator 5pin m5 smd marking laya transistor smd marking NA sot-23 marking UM smd 5pin PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    BAV70-A4

    Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
    Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan     		BAV70 OT-23 BAV70 C9/C20 50MHz ZC830A ZC831A ZC832A BAV70-A4 Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 PDF

    smd marking code lcsb

    Abstract: smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB
    Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or


    Original     		LP3985 150mA smd marking code lcsb smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB PDF

    smd marking code lcsb

    Abstract: LCRB lcjb ldo regulator MARKING CODE x2 sot23-5 OFA1202
    Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or


    Original     		LP3985 150mA furth49 smd marking code lcsb LCRB lcjb ldo regulator MARKING CODE x2 sot23-5 OFA1202 PDF

    LCJB

    Abstract: LDQB LDRB LCRB smd marking code lcsb marking ldqb SOT23-5 smd sot 23 code x1 OFA1202 LCSB LCUB MF05A
    Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or


    Original     		LP3985 150mA LP3985 LCJB LDQB LDRB LCRB smd marking code lcsb marking ldqb SOT23-5 smd sot 23 code x1 OFA1202 LCSB LCUB MF05A PDF

    1GX04

    Abstract: 2929 sop
    Contextual Info: SN74LVC1GX04 CRYSTAL OSCILLATOR DRIVER www.ti.com SCES581A – JULY 2004 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • • • Available in Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V


    Original     		SN74LVC1GX04 SCES581A SN74LVC1GU04) SN74LVC1G04) 24-mA 000-V 1GX04 2929 sop PDF

    SMD transistor 2x sot 23

    Abstract: diode 2.0x smd DIODE smd marking A3 General Electric scr SOT-23 NATIONAL SEMICONDUCTOR MARKING CODE sot LP2980 LP2980-ADJ LP2980LV MF05A smd transistor marking A3 sot23
    Contextual Info: December 5, 2008 LP2980LV Micropower SOT, 50 mA Low-Voltage Low-Dropout Regulator For Applications With Output Voltages < 2V General Description Features The LP2980LV is a 50 mA, fixed-output voltage regulator designed for high performance in applications requiring output


    Original     		LP2980LV LP2980LV OT-23 SMD transistor 2x sot 23 diode 2.0x smd DIODE smd marking A3 General Electric scr SOT-23 NATIONAL SEMICONDUCTOR MARKING CODE sot LP2980 LP2980-ADJ MF05A smd transistor marking A3 sot23 PDF

    BC237

    Abstract: jedec package TO-226AA
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA PDF

    BC237

    Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage


    Original     		BFR30LT1 BFR31LT1 236AB) BFR30LT1 CHAR218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement PDF

    IR3575

    Abstract: BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc


    Original     		MMBD2835LT1 MMBD2836LT1 MMBD2836LT1 236AB) MAR218A MSC1621T1 MSC2404 MSD1819A MV1620 IR3575 BC237 PDF

    BC237

    Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


    Original     		BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet PDF

    transistor 5BM

    Abstract: BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current


    Original     		MMBD6100LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor 5BM BC237 PDF

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book PDF

    NCV4264

    Abstract: NCV8664 Q100 smd A1 t IEC62132-4
    Contextual Info: NCV8664 Ultra−Low Iq Low Dropout Linear Regulator The NCV8664 is a precision 3.3 V and 5.0 V fixed output, low dropout integrated voltage regulator with an output current capability of 150 mA. Careful management of light load current consumption, combined with a low leakage process, achieve a


    Original     		NCV8664 NCV8664 NCV4264 NCV4264-2, NCV8664/D Q100 smd A1 t IEC62132-4 PDF

    DELTA fan bfb

    Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original     		MPSH81 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 DELTA fan bfb BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS PDF

    V6645

    Abstract: F2 ferrite NCV8664 NCV4264 Q100 On semiconductor date Code dpak suffix V66450G V66450 V66-4 On semiconductor date Code dpak YEAR A
    Contextual Info: NCV8664 Very Low Iq Low Dropout Linear Regulator The NCV8664 is a precision 3.3 V and 5.0 V fixed output, low dropout integrated voltage regulator with an output current capability of 150 mA. Careful management of light load current consumption, combined with a low leakage process, achieve a


    Original     		NCV8664 NCV8664 NCV4264 NCV4264-2, NCV8664/D V6645 F2 ferrite Q100 On semiconductor date Code dpak suffix V66450G V66450 V66-4 On semiconductor date Code dpak YEAR A PDF

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 PDF

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568 PDF

    diode l 0607

    Abstract: BC237
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		M1MA141/2KT1 inch/3000 M1MA141/2KT3 inch/10 M1MA141KT1 M1MA142KT1 70/SOT M1MA142KT1 MSC1621T1 diode l 0607 BC237 PDF

    BC237

    Abstract: 16 pin dip with heat sink
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which


    Original     		M1MA141/2WAT1 inch/3000 M1MA141/2WAT3 inch/10 M1MA141WAT1 M1MA142WAT1 70/SOT M1MA142WAT218A MSC1621T1 BC237 16 pin dip with heat sink PDF

    BC237

    Abstract: 2N3019 MOTOROLA
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR 3 2 BASE MAXIMUM RATINGS TA = 25°C 3 1 EMITTER 2 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage


    Original     		MSD601-RT1 MSD601-ST1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N3019 MOTOROLA PDF

    BC237

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60


    Original     		MSB709-RT1 m218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF