uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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PB1505GR
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿¿PB1505GR 3.0 GHz PRESCALER DIVIDED BY 256, 128, 64 FOR BS/CS TUNER DESCRIPTION ¡1PB1505GR is a silicon prescaler IC operating up to 3.0 GHz and divided by 2 5 6 ,1 2 8 , 64. Due to 3.0 GHz operation and high division, this IC can contribute to produce BS/CS tuners with kit-use of 17K series DTS controller or standard CMOS
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uPB1505GR
PB1505GR
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2SJ460
Abstract: MEI-1202 X10679E
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION
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2SJ460
2SJ460
MEI-1202
X10679E
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d1072
Abstract: 2SJ460 MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching device which can be driven directly by a 2.5 V power source. PACKAGE DRAWINGS in millimeter The MOS FET has excellent switching characteristics and is suitable
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2SJ460
2SJ460
d1072
MEI-1202
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C10535* MANUAL NEC
Abstract: 2SJ461 C10535E MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ461
2SJ461
C10535* MANUAL NEC
C10535E
MEI-1202
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2SJ461
Abstract: MARKING H19 C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a PACKAGE DRAWINGS in millimeter 2.5 V pow er source. The M O S FET has excellent switching characteristics and is suitable
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PDF
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2SJ461
2SJ461
MARKING H19
C10535E
MEI-1202
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2SJ460
Abstract: MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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PDF
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2SJ460
2SJ460
MEI-1202
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