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    Bourns Inc CRS1206-FX-1004ELF

    RES 1M OHM 1% 1/2W 1206
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    DigiKey CRS1206-FX-1004ELF Digi-Reel 32,485 1
    • 1 $0.26
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    CRS1206-FX-1004ELF Cut Tape 32,485 1
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    CRS1206-FX-1004ELF Reel 30,000 5,000
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    Avnet Americas CRS1206-FX-1004ELF Reel 14 Weeks 5,000
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    RS CRS1206-FX-1004ELF Bulk 16 Weeks 5,000
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    Avnet Abacus CRS1206-FX-1004ELF Reel 15 Weeks 5,000
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    Master Electronics CRS1206-FX-1004ELF 20,000
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    Bourns Inc CRS0805-FX-1004ELF

    RES 1M OHM 1% 1/4W 0805
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    DigiKey CRS0805-FX-1004ELF Cut Tape 16,637 1
    • 1 $0.18
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    • 100 $0.0536
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    CRS0805-FX-1004ELF Digi-Reel 16,637 1
    • 1 $0.18
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    Newark CRS0805-FX-1004ELF Cut Tape 3,207 10
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    RS CRS0805-FX-1004ELF Bulk 16 Weeks 5,000
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    Avnet Abacus CRS0805-FX-1004ELF Reel 15 Weeks 5,000
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    Master Electronics CRS0805-FX-1004ELF
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    Diodes Incorporated PI3EQX1004E2ZTFEX

    USB3 EQX U-QFN2545-34 T&R 3.5K
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    DigiKey PI3EQX1004E2ZTFEX Digi-Reel 10,250 1
    • 1 $3.14
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    PI3EQX1004E2ZTFEX Cut Tape 10,250 1
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    PI3EQX1004E2ZTFEX Reel 7,000 3,500
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    Mouser Electronics PI3EQX1004E2ZTFEX 2,534
    • 1 $3.14
    • 10 $1.7
    • 100 $1.37
    • 1000 $1.01
    • 10000 $0.929
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    Avnet Silica PI3EQX1004E2ZTFEX 10 Weeks 3,500
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    Bourns Inc CRM1206AFX-1004ELF

    RESHIGHPOWERA 1206 1M 1% 500MW T
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    DigiKey CRM1206AFX-1004ELF Cut Tape 4,150 1
    • 1 $0.22
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    • 100 $0.0635
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    CRM1206AFX-1004ELF Digi-Reel 4,150 1
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    Avnet Americas CRM1206AFX-1004ELF Reel 14 Weeks 5,000
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    Mouser Electronics CRM1206AFX-1004ELF 9,656
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    • 1000 $0.039
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    Master Electronics CRM1206AFX-1004ELF
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    Diodes Incorporated PI3EQX1004EZTFEX

    USB3 EQX U-QFN2545-34
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PI3EQX1004EZTFEX Digi-Reel 3,300 1
    • 1 $3.6
    • 10 $2.304
    • 100 $1.583
    • 1000 $1.18267
    • 10000 $1.18267
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    PI3EQX1004EZTFEX Cut Tape 3,300 1
    • 1 $3.6
    • 10 $2.304
    • 100 $1.583
    • 1000 $1.18267
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    Mouser Electronics PI3EQX1004EZTFEX 4,023
    • 1 $2.68
    • 10 $1.97
    • 100 $1.59
    • 1000 $1.19
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    Win Source Electronics PI3EQX1004EZTFEX 85,491
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    • 100 $1.345
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    X1004 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    X1004 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    X1004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Jan-07 X1004-BD XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-000W XX1004-BD-EV1 XX1004-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		X1004-BD 16-Feb-07 XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-EV1 XX1004-BD PDF

    12DBL0409

    Abstract: DM6030HK TS3332LD XR1002 XX1004-BD XX1004-BD-000V X1004-BD 3 pin ir receiver module 0038 ultrasonic amplifier circuit diagram
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		X1004-BD 16-Feb-07 XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-EV1 XX1004-BD 12DBL0409 DM6030HK TS3332LD XX1004-BD-000V X1004-BD 3 pin ir receiver module 0038 ultrasonic amplifier circuit diagram PDF

    SUP90P06-09L

    Abstract: No abstract text available
    Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS


    Original     		SUP90P06-09L 2002/95/EC O-220AB SUP90P06-09L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP90P06-09L PDF

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 PDF

    MH 1004 SMPS

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF830A, SiHF830A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MH 1004 SMPS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated


    Original     		IRFZ48R, SiHFZ48R SiHFZ48 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SUP75P03-07-E3

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 SUP75P03-07-E3 PDF

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE PDF

    IRFB9N65

    Abstract: No abstract text available
    Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFB9N65 PDF

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281 PDF

    any circuit using irf830

    Abstract: No abstract text available
    Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF830, SiHF830 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 any circuit using irf830 PDF

    irf740lc

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF740LC, SiHF740LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf740lc PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR D 1402 PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    Untitled

    Abstract: No abstract text available
    Text: METRIC Dimensions are millimeters over inches Ribbon Cable Interconnect Solutions Micro-MaTch Miniature Connector System — Crimp On Snap In COSI Connector C 2.54 [.100] 1.27 [.050] 2.65 [.104] Basic Part Number 338095 and Contacts Part Numbers 338096 and 338097


    Original     		are15 PDF

    SUP53P06-20

    Abstract: SUP53
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		SUP53P06-20 O-220AB SUP53P06-20-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP53P06-20 SUP53 PDF

    awm 2896 flat RIBBON CABLE

    Abstract: Flat Ribbon Connector - 636 60 IDC 768340-1 20 pin Polarized IDC Male Headers with Latch 5499910-1 1-111626-7 5104338-2 609-1030lf 5103309-3 1761686-3
    Text: Catalog 82012 Revised 10-09 TE logo and Tyco Electronics are trademarks of the Tyco Electronics group of companies and its licensors. tycoelectronics.com 82012–2.5M–CIS–FP–10-09 Ribbon Cable Interconnect Solutions Tyco Electronics Corporation Harrisburg, PA


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 11-Mar-11 PDF

    CX10047

    Abstract: sony CX10047 CX10045 CX10046 VOH14 sony camera WF01
    Text: SONY C O R P / C O M P O N E N T P R O D S 77 D e J a3fl53fl3~llQ003l]fl b | % 'xi T" 77^/7 X10046 S O N Y AGC and AUTO IRIS for B/W CAMERA Description: C X10046 is a bipolar 1C designed for B/W Package outline Unit: mm camera signal processing. It consists of an AGC


    OCR Scan     		CX10046 CX10046 CX10045 16-pin 15max CX10045and CX10047. VIN11 ol09vF2-vF1" CX10047 sony CX10047 VOH14 sony camera WF01 PDF

    CX10047

    Abstract: sony CX10047 CX10045 CX10046 ccd sony sony CX10045 SONY CAMERA BW82 cx10047 sony
    Text: mutœutam* h M .jft»-. •. ri—" ■ lliiTMt SONY CORP/COMPONENT PRODS 7? D e | 0302303 DDDQ30M T I D T - 7 7-/7 X10045 CCD CAMERA SIGNAL PROCESSING WITH SAMPLE-HOLD CIRCUIT Description: C X 10045 is a bipolar 1C designed for CCD camera signal processing. It samples the CCD image


    OCR Scan     		CX10045 CX10045 CX10046 CX10047. 16-pin 15MAX 05MIN fiBfl53fi3 CX10047 sony CX10047 ccd sony sony CX10045 SONY CAMERA BW82 cx10047 sony PDF