X BAND PULSED AMPLIFIER Search Results

Contextual Info: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation

SSPA

Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while

X-band radar module

Abstract: MAAP-009748-000000
Contextual Info: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs

AETHERCOMM

Abstract: Acros
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It

MS2601

Abstract: radar amplifier s-band
Contextual Info: MS2601 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 x 400 2NL FLG DESCRIPTION: 1 The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. 2 4 3 FEATURES INCLUDE: • Input/Output Matching • Gold Metallization

ASI2223-20

Abstract: ASI10533
Contextual Info: ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .310 2L FLG The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications A 4x .062 x 45° .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Networks

Contextual Info: M/A-COM Technology Solutions Inc. 100 Chelmsford Street Lowell, Massachusetts 01851 +1 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40%

Contextual Info: MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Rev. V2 Features •        12 W X-Band Power Amplifier 21 dB Large Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested

Contextual Info: MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Rev. V1 Features •        12 W X-Band Power Amplifier 36 dB Small Signal Gain 41 dBm Saturated Pulsed Output Power 40% Power Added Efficiency On Chip Gate Bias Circuit 100% On-wafer DC & RF Power Tested

Contextual Info: April 28, 2014 MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed Output Power and 40% Power Added Efficiency LOWELL, Mass.- BUSINESS WIRE - M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high performance

varian klystron

Abstract: UG-573 B568 klystron 1CE-279A klystron varian RCA-8568 8568 two cavity klystron klystron tubes
Contextual Info: 8568 Super-Power Klystron FIVE-RESONATOR, F I X E D - T U N E D , M A GN E TI CA LL Y- FO C US E D WATER-COOLED TYPE 2 1-MEGAWATT PEAK PULSE OUTPUT AT 285 6 M c / s For RF-Pulsed Amplifier inS-Band Accelerator Linear Service ELECTRICAL Heater, f o r M a trix -T y p e O x ide -C oa te d

x-band power transistor

Abstract: x band pulsed amplifier
Contextual Info: CHA5010a X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010a is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

SSPA

Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier Aethercomm P/N SSPA 1.08-1.10-10 is a high power, • Minimum output power = 40 Watts 40 watt pulsed, L band SSPA used in Secondary • Pulse droop < 0.05 dB for a 1 uSec pulse

mmm6022

Abstract: MMM6025
Contextual Info: Freescale Semiconductor Advance Information MMM6025/D Rev. 4, 12/2004 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch 1 Introduction

SAS 251

Contextual Info: CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: Freescale Semiconductor Advance Information MMM6025 Rev. 5, 02/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch 1 Introduction

Contextual Info: Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch

MMM6025

Abstract: MMM6025R2
Contextual Info: Freescale Semiconductor Advance Information Document Number: MMM6025 Rev. 5.1, 03/2005 MMM6025 Package Information Case 1603-2 9.85 x 9.0 × 1.4 mm HDI Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch

SAS 251

Contextual Info: u n ite d m o n o lit h ic se m ico n d u cto rs CHA5010a o e ° 9V X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010a is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

Contextual Info: Technical Data MMM5062/D Rev. 3, 9/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/

MMM6025

Contextual Info: Freescale Semiconductor Advance Information MMM6025/D Rev. 3.0, 12/2004 MMM6025 Package Information Case TBD Organic Multi-Chip Module MMM6025 Quad-Band GSM/GPRS Power Amplifier Front-End Module with PA and Antenna Switch 1 Introduction The MMM6025 is a 50 Ω Tx Power Amplifier

TRANSISTOR 1383

Abstract: gsm crosstalk mesfet datasheet by motorola motorola gsm range power amplifier module DCS1800 GSM900 MMM5062 PCS1900
Contextual Info: Technical Data MMM5062/D Rev. 1, 06/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/