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    X BAND LOW NOISE Search Results

    X BAND LOW NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPC4570GR-9LG-E2-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC4570GR(20)-9LG-E1-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    F6922AVRI8 Renesas Electronics Corporation Dual-Channel Low Noise Amplifier for Ka-Band SATCOM Visit Renesas Electronics Corporation
    UPC4570G2-E1-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC4570G2-E2-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation

    X BAND LOW NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Medium Power Amplifiers

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input


    Original     		PDF

    miteq amf

    Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
    Text: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input


    Original     		PDF

    B3RX1620

    Abstract: X-band amplifier WR90 waveguide switch X-band marine radar
    Text: B3RX1620 X-Band Low Noise Front End TYPICAL OPERATION Operating Conditions DESCRIPTION Operating voltage . . . . Signal frequency . . . . Local Oscillator frequency tuning voltage 4V . . . . tuning voltage 24V . . . The B3RX1620 is a low noise front end for X-band


    Original     		PDF B3RX1620 M209915A X-band amplifier WR90 waveguide switch X-band marine radar

    RF1136

    Abstract: RF113 RF327
    Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features „ „ „ „ „ „ Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB


    Original     		PDF RF1136 12-Pin, RF1136 DS090630 RF113 RF327

    Untitled

    Abstract: No abstract text available
    Text: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features       Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB


    Original     		PDF RF1136 12-Pin, RF1136 DS090630

    S11 SCHOTTKY diode

    Abstract: MA4E2054B-287T MA4E2054-1141T MA4E2054 MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes
    Text: MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diode Features • • • • • • • • • Package Outlines Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB (SSB) at X-Band


    Original     		PDF MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 S11 SCHOTTKY diode MA4E2054B-287T MA4E2054-1141T MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes

    MA4E1245KE

    Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
    Text: Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features ● ● ● ● ● ● ● Designed for High Volume Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB SSB at X-Band High Detector Sensitivity: -55 dBm TSS


    Original     		PDF MA4E1245 OT-23 -j100 MA4E1245KE MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 transistor schottky model spice microwave diode

    WR284* ISOLATOR

    Abstract: MS3116E-10-6S WR340 flange dimensions
    Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS


    Original     		PDF 2002/96/EC 2002/96/EC C-39B WR284* ISOLATOR MS3116E-10-6S WR340 flange dimensions

    Untitled

    Abstract: No abstract text available
    Text: RF1147 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features       Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.45 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage


    Original     		PDF RF1147 16-pin, RF1147 DS110103

    1417A

    Abstract: No abstract text available
    Text: X-BAND FREQUENCY SYNTHESIZER Data Sheet 1417A Rev. E N-DCN-DC103-102 V2 – IR X-Band Frequency Synthesizer RoHS Features * Extremely Low Close-in Phase Noise : ≤-95Bc/Hz @ 100Hz offset * Internal Reference : 1GHz OCXO * High Frequency Stability : 5 x 10E-8


    Original     		PDF N-DCN-DC103-102 -95Bc/Hz 100Hz 10E-8 12dBm -95dBc/Hz 100Hz -105dBc/Hz -120dBc/Hz 10KHz 1417A

    LG diode 831

    Abstract: MA4E2054-287T
    Text: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer


    Original     		PDF MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 LG diode 831 MA4E2054-287T

    LNA x-band

    Abstract: TGA2600-EPU
    Text: Advance Product Information March 4, 2004 X-band Ultra Low Noise Amplifier TGA2600-EPU Key Features • • • • • • • • Product Description Primary Applications • Radar • X band LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates


    Original     		PDF TGA2600-EPU TGA2600-EPU LNA x-band

    RF1156

    Abstract: No abstract text available
    Text: RF1156 BROADBAND MEDIUM POWER SP5T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features „ „ „ „ „ „ Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.60 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage


    Original     		PDF RF1156 16-pin, RF1156 DS090709

    SIFAM

    Abstract: No abstract text available
    Text: Page 1 of 2 980nm Pump WDMs C-band 1 x 2, 2 x 2 ports, 980/1550 nm operation Features and Benefits • Very low insertion loss • Proven reliability • Enables low noise figure SIFAM’s 980/1550nm WDM allows for combination of pump and signal in C-band 980 nm


    Original     		PDF 980nm 980/1550nm 22SWM SIFAM

    FMC1819LN-02

    Abstract: Fujitsu Ku microwave
    Text: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)


    Original     		PDF FMC1819LN-02 12dBm FMC1819LN-02 Fujitsu Ku microwave

    1N831

    Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
    Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and


    Original     		PDF 1N831 1N831A 1N831B 1N831C 1N832 1N832A 1N832B 1N832C 1N831 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes

    FMC2223LN-03

    Abstract: fujitsu k-band
    Text: FMC2223LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)


    Original     		PDF FMC2223LN-03 12dBm FMC2223LN-03 fujitsu k-band

    sot 14L

    Abstract: sot-23 ma4
    Text: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band


    OCR Scan     		PDF 100nA 500nA MA4E2054 MA4E2054A-287T MA4E2054C-287T sot 14L sot-23 ma4

    diode L44

    Abstract: Surface Mount RF Schottky Barrier Diodes
    Text: r M a n A M P ic om pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low I R clOOnA @ IV, <500nA @ 3Y • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band


    OCR Scan     		PDF 500nA MA4E2054 MA4E2054A-287T MA4E2054C-287T diode L44 Surface Mount RF Schottky Barrier Diodes

    ma4e12

    Abstract: No abstract text available
    Text: an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • Designed for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS


    OCR Scan     		PDF MA4E1245 OT-23 ma4e12

    Untitled

    Abstract: No abstract text available
    Text: M/A-COM PCS 1900 ULTRA LOW LOSS FULL BAND RECEIVE FILTER Features • • • • Full PCS Rx Band 1850 - 1910 MHz Ultra Low Insertion Loss < 0.4 dB (typical) High Rejection in Tx Band (1930 - 1990 MHz) > 60 dB Small Size - 4.65 x 3.15 x 1.7 Description


    OCR Scan     		PDF

    MA4E1245

    Abstract: S11 SCHOTTKY diode
    Text: M MôM m an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • D esigned for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS


    OCR Scan     		PDF MA4E1245 OT-23 S11 SCHOTTKY diode

    EL36

    Abstract: ND5052-3G
    Text: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST


    OCR Scan     		PDF ND5052-3G ND5052-3G EL36

    Untitled

    Abstract: No abstract text available
    Text: AMFW SATCOM AMPLIFIER SERIES ULTRA LOW NOISE LIMAs • C-BAIMD • X-BAND • Ku-BAINID


    OCR Scan     		PDF