Untitled
Abstract: No abstract text available
Text: RF3446D • Ideal Front-End Filter for European Wireless Receivers • Low-Loss, Coupled-Resonator Quartz Design • Simple External Impedance Matching • Complies with Directive 2002/95/EC RoHS 433.92 MHz SAW Filter Pb The RF3446D is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 433.92 MHz receivers. Receiver designs using this filter include superhet with
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RF3446D
2002/95/EC
RF3446D
SM3838-8
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EX 470
Abstract: No abstract text available
Text: LEADED, LOW FREQUENCY KHZ BAND CERAMIC RESONATORS LXZT FEATURES: • Excellent environmental resistance • Low cost • Low resonant impedance • Standard frequency range from 190 kHz to 1250 kHz • Packaging Tape and Reel Option -T STANDARD SPECIFICATIONS
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Untitled
Abstract: No abstract text available
Text: RF3404E • • • • • Ideal Front-End Filter for European Wireless Receivers Low-Loss, Coupled-Resonator Quartz Design Simple External Impedance Matching RoHS Compliant Complies with Directive 2002/95/EC RoHS 433.92 MHz SAW Filter Pb The RF3404E is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide
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RF3404E
2002/95/EC
RF3404E
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Untitled
Abstract: No abstract text available
Text: FORMED LEAD • LOW FREQUENCY kHz BAND SURFACE-MOUNT • CERAMIC RESONATORS LXZTG See table 2 FEATURES: • Excellent environmental resistance. • Standard frequency range from 375kHz to 1250kHz. • Gull-wing surface-mount. • Low cost. • Low resonant impedance.
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375kHz
1250kHz.
1250kHz
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Untitled
Abstract: No abstract text available
Text: RF3446E • Ideal Front-End Filter for European Wireless Receivers • Low-Loss, Coupled-Resonator Quartz Design • Simple External Impedance Matching • Complies with Directive 2002/95/EC RoHS 433.92 MHz SAW Filter Pb The RF3446E is a low-loss, compact, and economical surface-acoustic-wave (SAW) filter designed to provide front-end selectivity in 433.92 MHz receivers. Receiver designs using this filter include superhet with
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RF3446E
2002/95/EC
RF3446E
SM3030-6
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IRF3205ZPBF
Abstract: No abstract text available
Text: PD - 95705 IRF3205ZPbF IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-220 is available in PbF as Lead-Free
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IRF3205ZPbF
IRF3205ZS
IRF3205ZL
O-220
AN-994.
O-220AB
IRF3205ZPBF
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IRF3205Z
Abstract: IRF3205ZL IRF3205ZS
Text: PD - 94653A IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V
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4653A
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
IRF3205Z
IRF3205ZL
IRF3205ZS
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diode 66a
Abstract: IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS
Text: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V
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94653B
IRF3205Z
IRF3205ZS
IRF3205ZL
AN-994.
O-220AB
diode 66a
IRF 640 mosfet
IRF3205Z
IRF3205ZL
IRF3205ZS
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Untitled
Abstract: No abstract text available
Text: MC10H186 Hex D Master−Slave Flip−Flop with Reset The MC10H186 is a hex D type flip−flop with common reset and clock lines. This MECL 10H part is a functional/pinout duplication of the standard MECL 10K family part, with 100% improvement in clock toggle frequency and propagation delay and no increase in
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MC10H186
10K-Compatible
PLCC-20
PDIP-16
10H186
CDIP-16
MC10H186P
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B140HB
Abstract: B140HB-13 B140HB-13-F J-STD-020A
Text: B140HB 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT SPICE MODEL: B140HB Features • · · · · Ultra-low Leakage Current Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B140HB
J-STD-020A
MIL-STD-202,
DS30128
B140HB
B140HB-13
B140HB-13-F
J-STD-020A
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Augat
Abstract: MIL-STD-202 METHOD 208 LED E-46765 TRD11494
Text: Rocker Switch For Additional Options Refer to Page E4-E6 TRD Series MATERIAL SPECIFICATIONS: TYPICAL PERFORMANCE CHARACTERISTICS: Contacts . Gold over nickel or silver plate Case Material . Polyamide, black matte finish
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TRD10979
TRD11494
Augat
MIL-STD-202 METHOD 208 LED
E-46765
TRD11494
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3727FE, MN3727AE 6mm 1/3 inch 681H CCD Area Image Sensor • Overview ■ Pin Assignments M Di ain sc te on na tin nc ue e/ d The MN3727FE and MN3727AE are 6mm (1/3 inch) Interline Transfer CCD (IT-CCD) solid state image sensor devices.
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MN3727FE,
MN3727AE
MN3727FE
MN3727AE
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L3103L
Abstract: k 1542 igbt IRGB14C40L IRGS14C40L IRGS14C40LTRL IRGS14C40LTRR IRGSL14C40L igbt 50V 10A
Text: PD - 95193A IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Ignition IGBT IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy
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5193A
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
O-263AB
O-262AA
O-220AB
IRGS14C40L
igni41)
EIA-418.
L3103L
k 1542 igbt
IRGB14C40L
IRGS14C40L
IRGS14C40LTRL
IRGS14C40LTRR
IRGSL14C40L
igbt 50V 10A
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Untitled
Abstract: No abstract text available
Text: 6_ APPROVED: . DATE:_ TITLE: .197 [5 .0 0 ] -.100 [2 .5 4 ] B SPECIFICATIONS: Material: Insulator: PBT, glass reinforced, rated UL 94V— 0 Insulator color: Black C ontacts: Brass Plating: Gold flash over Nickel underplate overall Electrical: Operating voltage: 250 VAC max
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S00059T
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Untitled
Abstract: No abstract text available
Text: fr m s m m : s s m SPE C IFIC A T IO N S Materials: P APPLICAT rife: In sulator M aterial: Black LCP Insulation R esistance: 5000 M U min Term inal M aterial: P hosphor Bronze C urrent Rating: 1A O perating T em p Range: -65CC to +105-C with Tin: -65,:C to +125 C with Goid
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105-C
1-800-SAM
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Untitled
Abstract: No abstract text available
Text: High Power Coaxial Switches RLC Electronics' High Power Coaxial Switch is a single pole, two position type providing extremely high reliability, long life and excellent electrical performance over the frequency range of DC-6 GHz. The switches will handle 2000 Watts at 100 MHz
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SRP75-2â
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WE-MIDCOM
Abstract: No abstract text available
Text: SOLDER SUFFIX CUSTOMER TERMINAL RoHS LEAD Pb -FREE LF3 SnIOOX Yes No compliant RoHS WE-MIDCOM ELECTRICAL SPECIFICATIONS 25°C u n le ss oth erw ise noted: .105 [2.67] [21.60] INDUCTANCE: 350uH m in., 100kHz, lOOmV, SmADC, J1 - J 2 ; J3 - J 6 , Lp. DIELECTRIC RATING:
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350uH
100kHz,
1500Vrms
100MHz.
30MHz.
45MHz.
60MHz.
80MHz.
WE-MIDCOM
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A1620
Abstract: No abstract text available
Text: E SRA1620 - SRA16100 TAIWAN SEMICONDUCTOR 16.0 AMPS. Schottky Barrier Rectifiers RoHS I_Q=22flAC ass C O M P L IA N C E Features •s' 4<> ❖ 4<> Low p o w e rle s s , h igh e fficie n cy. High current capability, Low VF. High reliability High surge current capability.
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SRA1620
SRA16100
22flAC
O-22GAC
A1620
SRA16100)
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E5.D. HANDUNG PROCEDURES WHEN WORKING WITH THIS PART. REV, A B 03.00 E0O.118] PART NUMBER REV. SSL-LX3054SBC/A B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 0 2 8 3 . E.C.N. #10BRDR. & REDRAWN IN 3D.
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SSL-LX3054SBC/A
10BRDR.
470nm
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PA R T N U M B E R REV. S M L -L X 1 2 1 OSBSGC-TR ELECTRO-OPTICAL CHARACTERISTICS Ta =25T PARAMETER BLUE 2.00 [0.079] i 1,10 [0 ,04 3 ] CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART.
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marking code nt
Abstract: marking A3 Taiwan semiconductor "MARKING DIAGRAM" 122J SRA1620 41211
Text: TAIWAN SRA1620 - SRA16100 SEMICONDUCTOR 16.0 AMPS. Schottky Barrier Rectifiers b RoHS I_Q=22flA C COM PLIANCE nw 4 i2 n » !> Wtl ~ y un* l1W £•?> ■<aa Mi -e - i: ii Features ■i' 4«• ❖ -$■ «• ■i' Low power loss, high efficiency. High correni capability. Low VF.
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SRA1620
SRA16100
22flAC
O-22GAC
MIL-STD-202.
SRA16100)
marking code nt
marking A3 Taiwan semiconductor
"MARKING DIAGRAM"
122J
41211
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT 4.00 [0.157] - T - -1 2.3 t o .091] REV. 0 3.0 0 [00.118] 5,50 [0,217] PA R T N U M B E R REV. S S F — L X H 3 0 5 S B D —TR c E.C.N. N U M B E R AN D R E V ISIO N C O M M E N T S DATE A E.C.N. # 1 0 B R D R & REDRAW N.
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SSF--LXH305SBD
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marking code Iay
Abstract: SR20150 SR2020
Text: Sb TAIWAN SEM ICONDUCTO R SR2020 - SR20150 20.0 AMPS. Schottky Barrier Rectifiers RoHS TO-22ÖAB C O M P L IA N C E .• -¡g u n -iaS.tóI Features ■ i' Low power loss, high efficiency. High currerit capabilily. Low VF. < ' High re lia b ility High su rge curre fit capabi lily.
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SR2020
SR20150
O-220AB
Z20150)
marking code Iay
SR20150
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO S AMPERES EXCELLENT SAFE OPERATING AREA MAXIMUM RATINGS* RATINGS
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NSP6190
300ns,
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