power Diode 800V 20A
Abstract: CM50TF-28H
Text: CM50TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/1400 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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CM50TF-28H
Amperes/1400
power Diode 800V 20A
CM50TF-28H
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BUP 312
Abstract: bup 313 BUP 312 drawing m4 12h CM75TF-12H
Text: CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 75 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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CM75TF-12H
Amperes/600
BUP 312
bup 313
BUP 312 drawing
m4 12h
CM75TF-12H
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300 volt 5 ampere IGBT a 31
Abstract: CM100TF-12H aa 118 diode m4 12h
Text: CM100TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 100 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P
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CM100TF-12H
Amperes/600
300 volt 5 ampere IGBT a 31
CM100TF-12H
aa 118 diode
m4 12h
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CM50TF-24H
Abstract: No abstract text available
Text: CM50TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/1200 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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CM50TF-24H
Amperes/1200
Millimeters925-7272
CM50TF-24H
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Untitled
Abstract: No abstract text available
Text: Surface Mount Zener Diodes Dynamic Resistance Marking Code Zener1 Voltage @ IZT Test Current VZ V I ZT(mA) BZX384-C13 BZX384-C15 BZX384-C16 BZX384-C18 BZX384-C20 BZX384-C22 BZX384-C24 BZX384-C27 BZX384-C30 BZX384-C33 BZX384-C36 BZX384-C39 WJ WK WL WM WN
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BZX384-C13
BZX384-C15
BZX384-C16
BZX384-C18
BZX384-C20
BZX384-C22
BZX384-C24
BZX384-C27
BZX384-C30
BZX384-C33
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Untitled
Abstract: No abstract text available
Text: SP601 Semiconductor July 1998 WN ITHDRA PART W OBSOLETE SS S PROCE DESIGN N NO EW Features File Number 2429.5 Half Bridge 500VDC Driver • Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V The SP601 is a smart power high voltage integrated circuit
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SP601
500VDC
SP601
AN8829
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HV-2405E
Abstract: 240v - 30vdc transformer 4284V RB-17 41VRMS
Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark HV-2405E TM WN ITHDRA PART W OBSOLETE SS S PROCE DESIGN N NO EW September 1998 File Number World-WideSingle Chip Power Supply Features
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HV-2405E
HV-2405E
24VDC
15Vrms
275Vrms
200Hz
-40oC
-25oC
240v - 30vdc transformer
4284V
RB-17
41VRMS
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PC113 SHARP
Abstract: PC111 8705121 sharp pc111 PC111L DPC113 pc113
Text: PC110L/PC111L/PC112L/PC113L SMHUM9HP PC110L/PC111L PC112L/PC113L Long Creepage Distance Type Photocoupler Leadformingtype Itype land tapingreel type(Ptype arealsoavailable. (PC1«MJ / PC111U / PC112U/PC113U, PC110LP0 / PC111LP0/PC112LP0 i PC113LP0) i WN-VDE0884 approvedtype is alsoavailable as anoption.
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PC110L/PC111L/PC112L/PC113L
PC110L/PC111L
PC112L/PC113L
-VDE0884
PC111U
PC112U/PC113U,
PC110LP0
PC111LP0/PC112LP0
PC113LP0)
E64380)
PC113 SHARP
PC111
8705121
sharp pc111
PC111L
DPC113
pc113
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AN8829
Abstract: 10MFD SP601 smart ups 750 circuit
Text: SP601 July 1998 WN ITHDRA PART W OBSOLETE SS PROCE IGNS W DES N NO E Features File Number 2429.5 Half Bridge 500VDC Driver • Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V The SP601 is a smart power high voltage integrated circuit
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SP601
500VDC
SP601
AN8829
10MFD
smart ups 750 circuit
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MOS-Controlled Thyristor
Abstract: MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off
Text: MCT3A65P100F2, MCT3D65P100F2 Semiconductor CE April 1999 [ /Title MCT3 A65P1 00F2, MCT3 D65P1 00F2 /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark IGNS WN DRA EW DES H T I TW ON PAR ETE - N
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MCT3A65P100F2,
MCT3D65P100F2
A65P1
D65P1
-1000V
150oC
MO-093AA
MOS-Controlled Thyristor
MOS Controlled Thyristor
MCT thyristor
TA49226
MCT harris
MCT3A65P100F2
MCT thyristor 1000v
MCT3D65P100F2
"MOS Controlled Thyristors"
100A gate turn-off
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DIODE 1N1206
Abstract: BROWN BOVERI n1204a N4508 1n4508 D-6840 S2110 S2120 1N1202 N1200
Text: -FMC BBC BROWN BOVERI BR O WN , BOVERI & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers Geschäftsbereich Halbleiter und Strom richter Telefon 06206 503-1, Telex 04-65727 Postfach 200, D-6840 Lampertheim Series 21 22 Amperes Average Brochure Order No.
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D-6840
S2110
R2110
N1200,
N1200A,
N2248,
1N3616
S2120
R2120
1N1202,
DIODE 1N1206
BROWN BOVERI
n1204a
N4508
1n4508
1N1202
N1200
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4 digit object counter circuit
Abstract: IC 7217 Unit COUNTER CD4013 UP DOWN COUNTER two digit common anode multiplexed 7-segment disp ICM7217 IC CD4069 not gate CD4011 APPLICATIONS cd4013 pin configuration cd4069 on off switch icm7213
Text: [ /Title ICM7 217 /Subject (4Digit LED Display, Programmable Up/Do wn Counte r) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Programmable UpDown Counte r, Common Anode, LED, Com- July 2001 UCT PROD E PRODUCT E T E L UT OBSO UBSTIT 88-INTERSIL
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-888-INTERS
ICM7217
ICM7217
4 digit object counter circuit
IC 7217 Unit COUNTER
CD4013 UP DOWN COUNTER
two digit common anode multiplexed 7-segment disp
IC CD4069 not gate
CD4011 APPLICATIONS
cd4013 pin configuration
cd4069 on off switch
icm7213
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RTL030P02
Abstract: No abstract text available
Text: RTL030P02 Transistors 2.5V Drive Pch MOSFET RTL030P02 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. (90mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Abbreviated symbol : WN
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RTL030P02
RTL030P02
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AN8829
Abstract: 10MFD A114M SP600 G2U TR
Text: SP600 Semiconductor July 1998 WN ITHDRA TE W T R A P OLE SS OBS NS PROCE S DE IG NO NEW Features File Number 2428.4 Half Bridge 500VDC Driver • Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V The SP600 is a smart power high voltage integrated circuit
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SP600
500VDC
SP600
AN8829
10MFD
A114M
G2U TR
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AN8829
Abstract: 10MFD SP600 G2U TR
Text: SP600 July 1998 WN ITHDRA TE W T R A P O LE SS OBS NS PROCE IG S W DE NO NE Features File Number 2428.4 Half Bridge 500VDC Driver • Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V The SP600 is a smart power high voltage integrated circuit
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SP600
500VDC
SP600
AN8829
10MFD
G2U TR
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SHINDENGEN DIODE
Abstract: diode tw
Text: wn&T/UT. . j. . î i i - / j. LSurface Mounting Device y a 7 T - h v-om Schottky Barrier Diode _Twin Diode iv OUTLINE DIMENSIONS DE5SC3ML 30V 5A im •S M D • T j 1 5CTC • f i V r = 0 .4 5 V # P b rs m 7* A 5 > S ' i t i SI
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SCR TRIGGER PULSE TRANSFORMER
Abstract: HV400IP 1W carbon resistor SCR 30v triggering circuit 4 pin SCR gate drive circuit SCR DRIVING SCR TRIGGER PULSE circuit 1N914 HV400 HV400IB
Text: HV400 Semiconductor July 1998 WN ITHDRA PART W OBSOLETE SS S PROCE DESIGN N NO EW Features High Current MOSFET Driver • Fast Fall Times . . . . . . . . . . . . . . . . . . 16ns at 10,000pF The HV400 is a single monolithic, non-inverting high current driver designed to drive large capacitive loads at high slew
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HV400
000pF
HV400
1000nC.
1N914
100mA/div
50ns/div
200mA,
SCR TRIGGER PULSE TRANSFORMER
HV400IP
1W carbon resistor
SCR 30v triggering circuit
4 pin SCR gate drive circuit
SCR DRIVING
SCR TRIGGER PULSE circuit
1N914
HV400IB
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diode 22ph
Abstract: x877
Text: 19-0204; Rev 1; 5/94 A li1 X I> k l «FMW-UMION* 5V/3.3V/3V/Adjustable-O utput, Step-Up/Step-Do wn DC-DC C onverters _ F eatures ♦ Regulates from Inputs Above & Below the Output The MAX877 delivers a regulated 5V output from 2.5V to
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210mA
195jiA
MAX877/MAX8/8/MAX8/9
MAX878CPA
MAX878CSA
MAX878C/D
MAX878EPA
MAX878ESA
MAX878MJA
MAX877)
diode 22ph
x877
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AN9863
Abstract: ICL3224 ICL3226 ICL3238 ICL3244 MAX3224 MAX3226 AUTO INDICATOR MONITOR 321 106
Text: ICL3224, ICL3226, ICL3238, ICL3244 TM Data Sheet itle L32 , L32 , L32 , L32 bjec croa , V to .5V, 0kb RS2 nsc ers th hanc tom c wer wn) utho ) eyw s tersi rpor on, ico ucto ata quis July 2001 1 Microamp, +3V to +5.5V, 250kbps, RS-232 Transceivers with Enhanced
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ICL3224,
ICL3226,
ICL3238,
ICL3244
250kbps,
RS-232
ICL32XX
ElA/TIA-232
AN9863
ICL3224
ICL3226
ICL3238
ICL3244
MAX3224
MAX3226
AUTO INDICATOR MONITOR 321 106
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IS1832
Abstract: diode 1800v 0.5a TFR1L
Text: 9 0 9 7 2 50 TOSHIBA 3T DE I TDTTSSD 000223e] T TFR1T 39C 0 2239 DISCRETE/OPTO 0 T 1 0 3 “// FAST RECOVERY DIODE _ Unit in wn 1500V 0.5A MAXIMUM RATINGS C H A R A C T E R IS T IC TFR 1L TFR1N Repetitive Peak R everse Voltage TFR1Q TFR1T Average F orw ard C urrent
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000223e
IS1832
diode 1800v 0.5a
TFR1L
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WN diode
Abstract: No abstract text available
Text: FEA TU R ES m • 1 0 0 -6 0 0 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm MODEL NO. Dsosoejj WN Diode SP6T ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP 2 6 14 3 CONT1 ^ " CONT2 ■■All 1 5 7 8 9 11 12 13 15 19 GND
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MCT thyristor
Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC
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MCTV75P60E1,
MCTA75P60E1
O-247
-600V
150oC
MO-093AA
O-218)
MCT thyristor
MCTV75P60E1
MOS Controlled Thyristor
MCT harris
"MOS Controlled Thyristors"
mct thyristor datasheet
MCTA75P60E1
MCTV75P6
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TA 8825 AN toshiba
Abstract: BA 9515 TC9183F S1-S17 td6133 LCD 1602 D1 varactor 650 manual
Text: 02E ! 9097247 TOSH IB A • ELECTRO N IC 18261 wn£ ^ D : T-77-21 DTS-11 LOW VOLTAGE FM/AM 2 BAND DTS CONTROLLER. Unit in mm 31 TC9183F is LSI for digital tuning system capable of making 3V low voltage operation. 30 46 It contains PLL circuit, LCD indicating function
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T-77-21
DTS-11
TC9183F
maximum28
TC9183F
TA 8825 AN toshiba
BA 9515
S1-S17
td6133
LCD 1602 D1
varactor 650 manual
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Untitled
Abstract: No abstract text available
Text: 0: 41 PM S/UNI10xGE Telecom Standard Product Data Sheet Released ob sd ay ,2 8O ct S/UNI-10xGE er ,2 00 4 02 :3 PM3388 er In co n Th ur Ten-Port Gigabit Ethernet Controller Proprietary and Confidential Released Issue No. 6: September 2002 Do wn lo ad ed by
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S/UNI10xGE
S/UNI-10xGE
PM3388
PMC-2000340,
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