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    WK 2 E TRANSISTOR Search Results

    WK 2 E TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    WK 2 E TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MICA WAFER

    Abstract: Glass Fibre Reinforced Plastics "WST 30" silicone caoutchouc WSI220225 unterlegscheiben 3159 WKT300 WK220
    Text: Silikongummierte Unterlegscheiben für Halbleiter E Silicone rubber washers for semiconductors Rondelles gommées au caoutchouc silicone pour semiconducteurs Scheibe/Washer/Rondelle Isolierkappe/Insulator cap/Capot isolant Isolierschlauch/Insulating tube/Tuyau isolant


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    PDF O-220 MICA WAFER Glass Fibre Reinforced Plastics "WST 30" silicone caoutchouc WSI220225 unterlegscheiben 3159 WKT300 WK220

    Untitled

    Abstract: No abstract text available
    Text: Blackfin Dual Core Embedded Processor ADSP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 FEATURES MEMORY Dual-core symmetric high-performance Blackfin processor, up to 500 MHz per core Each core contains two 16-bit MACs, two 40-bit ALUs, and a 40-bit barrel shifter


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    PDF SP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 16-bit 40-bit 349-ball

    SAA 1075

    Abstract: LP1 K06 LP1 K09 LPD70 bayer 2803 SAA 1006 32 bit SECDED* encoder adds 5 bit ecc camera motors
    Text: Blackfin Dual Core Embedded Processor Preliminary Technical Data ADSP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 FEATURES MEMORY Dual-core symmetric high-performance Blackfin processor, up to 500 MHz per core Each core contains two 16-bit MACs, two 40-bit ALUs, and a


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    PDF 16-bit 40-bit 349-ball ADSP-BF609BBCZ-5X SP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 PR10659-0-4/13 SAA 1075 LP1 K06 LP1 K09 LPD70 bayer 2803 SAA 1006 32 bit SECDED* encoder adds 5 bit ecc camera motors

    LP1 K06

    Abstract: LP1 K09 153 ball eMMC memory saa 1900 emmc controller 4.5 10LP3 "DATA VISION" 16 X 2 LCD MODULE simple circuit motor forward reverse control diagram ADSP-BF60X
    Text: Blackfin Dual Core Embedded Processor ADSP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 FEATURES MEMORY Dual-core symmetric high-performance Blackfin processor, up to 500 MHz per core Each core contains two 16-bit MACs, two 40-bit ALUs, and a 40-bit barrel shifter


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    PDF SP-BF606/ADSP-BF607/ADSP-BF608/ADSP-BF609 16-bit 40-bit 349-ball LP1 K06 LP1 K09 153 ball eMMC memory saa 1900 emmc controller 4.5 10LP3 "DATA VISION" 16 X 2 LCD MODULE simple circuit motor forward reverse control diagram ADSP-BF60X

    bosch ecu 0 261 200 218 connection diagram

    Abstract: CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838
    Text: Canada Wieland Electric Inc. 2889 Brighton Road Oakville, Ontario L6H 6C9 Phone: 905 829-8414 Fax: (905) 829-8413 e-mail: oakville@wielandinc.com On the Internet: www.wielandinc.com DIN rail terminal blocks • with screw connection • with spring connection


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    PDF 1-800-wieland bosch ecu 0 261 200 218 connection diagram CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838

    iso 9141 interface avr

    Abstract: 7259g AVR-M1608C270MBAAB BAS16 MMZ2012Y202B TLE7259G
    Text: A pp l i c a t i o n N ot e , A p r 20 0 5 TLE 7259G Application Note Automotive Power N e v e r s t o p t h i n k i n g . Edition 2005-04-20 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.


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    PDF 7259G 7259G, iso 9141 interface avr 7259g AVR-M1608C270MBAAB BAS16 MMZ2012Y202B TLE7259G

    LHI 778 datasheet

    Abstract: TLE8261E TLE8262-2E 3010A circuit diagram for automatic voltage regulator LHi 778 LIN bus can gateway SAE J2602-2 J2284 TLE8262E
    Text: D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 9 TLE8264E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8264E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8264E LHI 778 datasheet TLE8261E TLE8262-2E 3010A circuit diagram for automatic voltage regulator LHi 778 LIN bus can gateway SAE J2602-2 J2284 TLE8262E

    TLE8261E

    Abstract: DIODE 921 sbc 8261 Kemet CAPACITOR DATE CODE MARKING ON PACKING TLE8264-2E circuit diagram for automatic voltage regulator Kemet DATE CODE MARKING ON PACKING TLE8262E TLE8263E J2284
    Text: D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 9 TLE8261E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8261E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8261E TLE8261E DIODE 921 sbc 8261 Kemet CAPACITOR DATE CODE MARKING ON PACKING TLE8264-2E circuit diagram for automatic voltage regulator Kemet DATE CODE MARKING ON PACKING TLE8262E TLE8263E J2284

    TLE8261-2E

    Abstract: TLE8261E EDP marking code diodes VCC3 1156 01 J2284 sbc 8261 TLE8262-2E TLE8262E TLE8263E TLE8264-2E
    Text: D a t a S h e e t , R e v. 1 . 0 , M ay 2 00 9 TLE8261-2E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8261-2E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8261-2E TLE8261-2E TLE8261E EDP marking code diodes VCC3 1156 01 J2284 sbc 8261 TLE8262-2E TLE8262E TLE8263E TLE8264-2E

    TLE8262E

    Abstract: LHI 778 datasheet SAE J2602-2 TLE8261E circuit diagram for automatic voltage regulator Kemet DATE CODE MARKING ON PACKING LIN bus can gateway TLE8263E J2284 J2602-2
    Text: D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 9 TLE8263E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8263E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8263E TLE8262E LHI 778 datasheet SAE J2602-2 TLE8261E circuit diagram for automatic voltage regulator Kemet DATE CODE MARKING ON PACKING LIN bus can gateway TLE8263E J2284 J2602-2

    TLE8262-2E

    Abstract: TLE8261E SAE J2602 transceiver J2284 TLE8262E TLE8263E TLE8264-2E TLE8264E tle8261-2e SAE 9141
    Text: D a t a S h e e t , R e v. 1 . 0 , M ay 2 00 9 TLE8262-2E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8262-2E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8262-2E TLE8262-2E TLE8261E SAE J2602 transceiver J2284 TLE8262E TLE8263E TLE8264-2E TLE8264E tle8261-2e SAE 9141

    TLE8264-2E

    Abstract: TLE8261E J2284 J2602-2 TLE8262E TLE8263E TLE8264E running light ISO 9141, 250 kbaud SAE 9141
    Text: D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 9 TLE8264-2E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8264-2E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8264-2E TLE8264-2E TLE8261E J2284 J2602-2 TLE8262E TLE8263E TLE8264E running light ISO 9141, 250 kbaud SAE 9141

    TLE8262E

    Abstract: TLE8264-2E LHI 778 datasheet TLE8261E circuit diagram for automatic voltage regulator SAE J2284 transceiver J2284 J2602-2 TLE8263E TLE8264E
    Text: D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 9 TLE8262E U ni v e r s a l S y s t e m B as i s C h i p H ER M ES R ev . 1 . 0 A u to m o t i v e P o w e r TLE8262E Table of Contents Table of Contents 1 HERMES Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF TLE8262E TLE8262E TLE8264-2E LHI 778 datasheet TLE8261E circuit diagram for automatic voltage regulator SAE J2284 transceiver J2284 J2602-2 TLE8263E TLE8264E

    V850E/IA1

    Abstract: tip21 transistor bldc lm339 lm339 pwm speed lm324 inverter DC MOTOR DRIVE WITH LM324 lm324 dc to ac inverters diagram lm339 pwm speed motor V850E/IA2 speed measuring
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF V0x0000240 V0x00003c0 V0x00001000 V0x0fff0000 U17209EJ1V0AN V850E/IA1 tip21 transistor bldc lm339 lm339 pwm speed lm324 inverter DC MOTOR DRIVE WITH LM324 lm324 dc to ac inverters diagram lm339 pwm speed motor V850E/IA2 speed measuring

    BCR119L3

    Abstract: BCR119 BCR119F BCR119S BCR119T BCR119W
    Text: BCR119./SEMH7 NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR119/F/L3


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    PDF BCR119. BCR119/F/L3 BCR119T/W BCR119S EHA07264 EHA07265 BCR119 BCR119F BCR119L3 BCR119L3 BCR119 BCR119F BCR119S BCR119T BCR119W

    CLTS-2B TEMPERATURE SENSORS

    Abstract: EGP-5-120 strain Gages cea 00 125UN 350 CEA-XX-062UL-120 CLTS-2B 134-AWP SR-4 STRAIN GAGES LM-SS-210AW-048 EA-06-125BZ-350 TN501
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book precision strain gages vishay micro-measurements vse-db0066-0705 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0066-0705 CLTS-2B TEMPERATURE SENSORS EGP-5-120 strain Gages cea 00 125UN 350 CEA-XX-062UL-120 CLTS-2B 134-AWP SR-4 STRAIN GAGES LM-SS-210AW-048 EA-06-125BZ-350 TN501

    bc807

    Abstract: No abstract text available
    Text: '  BC807-25QA; BC807-40QA ' 1  45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible


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    PDF BC807-25QA; BC807-40QA DFN1010D-3 OT1215) BC807-25QA BC817-25QA BC817-40QA bc807

    BC817

    Abstract: No abstract text available
    Text: '  BC817-25QA; BC817-40QA ' 1  45 V, 500 mA NPN general-purpose transistors Rev. 1 — 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible


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    PDF BC817-25QA; BC817-40QA DFN1010D-3 OT1215) BC817-25QA BC807-25QA BC807-40QA BC817

    MTP2955V

    Abstract: transistor W66 WD62 7w66 D665 fairchild mosfets MTP2955V/SSP35n03
    Text: MTP2955V* P-Channel Enhancement Mode Field Effect Transistor Features General Description • -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.


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    PDF MTP2955V* MTP2955V transistor W66 WD62 7w66 D665 fairchild mosfets MTP2955V/SSP35n03

    7w66

    Abstract: 7121 MOSFET 7121 D665 MTP3055V transistor W66 D666
    Text: MTP3055V N-Channel Enhancement Mode Field Effect Transistor Features General Description • 12 A, 60 V. RDS ON = 0.150 Ω @ VGS = 10 V This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.


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    PDF MTP3055V 7w66 7121 MOSFET 7121 D665 MTP3055V transistor W66 D666

    BCR119

    Abstract: BCR119F BCR119L3 BCR119S BCR119T BCR119W bcr1
    Text: BCR119./SEMH7 NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR119/F/L3


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    PDF BCR119. BCR119/F/L3 BCR119T/W BCR119S EHA07264 EHA07265 BCR119 BCR119F BCR119L3 BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W bcr1

    TL-2000

    Abstract: No abstract text available
    Text: N "7 > y ' 7 $ / T ransistors 2 S D 1 7 6 2SD1760F5 F NPN y U 3 > h - 7 > v * 2 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. 5 • $WK>í'sÉH/D¡men8¡ons Unit : mm • 1) V c e (sat) J i3 0.5+ 0.I V C E ( s a t) = 0 .5 V ( T y p .) (IC / I b = 2 A / 0 .2 A )


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    PDF 2SD1760F5 SC-63 TL-2000

    2n1183 germanium transistor pnp

    Abstract: 2N1183 2N1183A 2N1184
    Text: MIL-S-19500/143 El AMENDMtNi-2 10 June 1969 SÜPE5ÎE5ÎFR5-AMENDMENT-1 16 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM f ilia l ip j , ol ?K JllfU TU>. I in » 11 in n A iQ J A f 9K J11R 1A i (-iv u m ii


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    PDF 2N1183, 2N1183A, 2N11838 2N1184, 2NU84B MIL-S-19500/U3R 2n1183 germanium transistor pnp 2N1183 2N1183A 2N1184

    MDL82

    Abstract: a1580
    Text: • ■ I WK ■ g ■ PHOTO DARLINGTON TRANSISTOR Æ ■ I g DESCRIPTION 02.97 ‘ 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. r 4*1


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    PDF MDL82 a1580