WIRE MICROSTRIP LINE Search Results

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

Contextual Info: ATC 113 SERIES TWIN/CAP SLCs G G L1 C1 C2 L1 T W L Equivalent Series Cap. = C1 = 2 C2 2 The top terminations of C1 and C2 make direct contact with the microstrip line conductors, eliminating the loss due to lead wire connections. ATC 113 SERIES TWIN/CAP® capacitors are designed for incremental tuning by selecting the appropriate pad connections to yield

BTS015

Abstract: IPC-2141A MT-094 Wire Microstrip Line stripline pcb Shielded Microstrip FR4 dielectric constant 4.6 Shielded Microstrip Line MECL handbook
Contextual Info: MT-094 TUTORIAL Microstrip and Stripline Design INTRODUCTION Much has been written about terminating PCB traces in their characteristic impedance, to avoid signal reflections. However, it may not be clear when transmission line techniques are appropriate.

Contextual Info: MTLP www.vishay.com Vishay Electro-Films Wire Bondable Thin Film Micro-Strip Transmission Line Resistor Arrays FEATURES • 50  micro-strip configuration • Wire bondable terminations • Alumina 99.6 % substrate; as-fired or polished APPLICATIONS • Test and measurement setups

MRF4070

Abstract: 15 w RF POWER TRANSISTOR NPN
Contextual Info: MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA The RF Line 70 W 175 MHz CONTROLLED Q RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . designed for 1 2.5 Volt VH F large-sign al am plifie r applications in industrial and com m ercial FM equipm ent operating to 1 7 5 M H z

Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power TVansistor The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed as a low power driver with high gain and can be operated in Class A, B or C.

motorola AN211A

Abstract: 42256 planar transformer theory
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

6647a

Abstract: 2082-2700-00 560-7A50 attenuator 3dB DC 18GHz wiltron 6647A Microwave Generator SWR BRIDGE metal detector vlf HP-85
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

ansi-y14.5m-1994

Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
Contextual Info: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

6647a

Abstract: uhf microwave fet 560-7A50 Logarithmic Amplifier detector 18GHz metal detector vlf 2082-2700-00 2082-2700 7082 coil gold detector decibel meter
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

Contextual Info: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110

j130 fet

Abstract: MRF27SG
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND

thuraya

Abstract: merrimac Hybrid Couplers
Contextual Info: MERRIMAC OFFERS A DESIGN CHOICE OF “LUMPED ELEMENT”, “MICRO-STRIP” OR “STRIP-LINE” TECHNOLOGY DESIGN CONSIDERATIONS AFFECTING RELIABILITY At Merrimac, three design techniques are used to produce the transmission characteristics of most of our signal

Contextual Info: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110

Transistor motorola 513

Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
Contextual Info: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed

100B2R7CP500X

Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line

TP5002

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA The RF Line U H F Linear P o w e r T ra n sisto rs 1.5 W — 380 to 512 MHz UHF LINEAR POW ER T R A N SIS T O R S N PN SILICO N T h e T P 5 0 0 2 / S a re N P N g o ld m e ta llize d t r a n s is t o r s u s in g d iff u s e d b a lla st r e s is t o r s for

560-7A50

Abstract: 6647a Shielded Microstrip uhf microwave fet 2082-2700-00 7082 coil gold detector decibel meter Logarithmic Amplifier detector 18GHz series and parallel resonance
Contextual Info: Introduction to Microwave Capacitors Microwave Capacitors in MICs Typical Microwave Circuit Applications Microwave MLC, SLC, or Thin-Film capacitor applications in MIC circuits can be grouped into the following categories: • DC Block in series with an MIC transmission line

AN1955

Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3

GX-0300 Arlon

Abstract: variable capacitor GX-300 MJD320 22 pf variable capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier

transistor MWTA 06

Abstract: mwta 06
Contextual Info: MwT-17 500 MHz-12 GHz High Linearity GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES • 1 WATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON DLC PASSIVATION

MRF5S21090

Abstract: 100B1R2BP
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

GX-0300 Arlon

Abstract: MJD320 ATC 116
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier

planar transformer theory

Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz