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    bitblt raster

    Abstract: NS32FX16 bitblt AN-634 C1995
    Text: National Semiconductor Application Note 634 July 1990 1 0 INTRODUCTION The NS32CG16 has several instructions that automate the process of performing a BIT aligned BLock Transfer BITBLT In this application note the parameter setup for these instructions will be discussed The NS32FX16 is pin


    Original     		PDF NS32CG16 NS32FX16 NS32CG16-specific 32-bit 20-3A bitblt raster bitblt AN-634 C1995

    variable ramp generator

    Abstract: No abstract text available
    Text: a FEATURES Single +5 V Supply TTL and CMOS Compatible 10 ps Delay Resolution 2.5 ns to 10 ␮s Full-Scale Range Maximum Trigger Rate 50 MHz MIL-STD-883-Compliant Versions Available Digitally Programmable Delay Generator AD9501 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS


    Original     		PDF MIL-STD-883-Compliant AD9501 AD9501 C1295a AD9501CHIPS AD9501JN AD9501JP AD9501JP-REEL variable ramp generator

    variable ramp generator

    Abstract: Knock AD9501 AD9501JN AD9501JP AD9501JQ AD9501SQ digital delay generator
    Text: a FEATURES Single +5 V Supply TTL and CMOS Compatible 10 ps Delay Resolution 2.5 ns to 10 ␮s Full-Scale Range Maximum Trigger Rate 50 MHz MIL-STD-883-Compliant Versions Available Digitally Programmable Delay Generator AD9501 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS


    Original     		PDF MIL-STD-883-Compliant AD9501 AD9501 C1295a variable ramp generator Knock AD9501JN AD9501JP AD9501JQ AD9501SQ digital delay generator

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATE» DEVICE bbE D • 4BES771 □ □ 1 2 M cn CMOS SyncFIFO 64x8, 256x8,512x8, 1024 x 8, 2048 x 8 and 4096 x 8 715 « I D T IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 FEATURES: DESCRIPTION: • • • • • • • • • T he ID T 7 2 4 2 0 /7 2 2 0 0 /7 2 2 1 0 /7 2 2 2 0 /7 2 2 3 0 /7 2 2 4 0


    OCR Scan     		PDF 4BES771 256x8 512x8, IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 IDT72420/72200/72210/72220/72230/72240

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 256Kx8 FLASH/32Kx8 SRAM Combo Memory Mi C R OSYSTE MS DP59CF232 K DESCRIPTION: The DP59CF232K is a combination memory chip consist of 2M-bit Flash Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory organized as 32K words by 8 bits.


    OCR Scan     		PDF 256Kx8 FLASH/32Kx8 DP59CF232 DP59CF232K 256K-bit 30A184-10 DP59CF232K

    72V841

    Abstract: No abstract text available
    Text: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9 and DUAL 4,096 X 9 Each of the two FI FOs designated FI FO A and FI FO B contained In the IDT72V801 /72V811/72V821 /72V831 /72V841 has a 9-bit input data port (DAO - DA8, DB0 - DB8) and a9-blt output data port (QA0 -QA8, QB0 - QB8).


    OCR Scan     		PDF IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 IDT72V801 811/72V821 /72V831 /72V841 72V841

    Untitled

    Abstract: No abstract text available
    Text: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO Integrated Device Technology, Inc. FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 UtopiaFlFO is a high-speed, low power


    OCR Scan     		PDF IDT77301 wi/97:

    Untitled

    Abstract: No abstract text available
    Text: t InNET TECHNOLOGIES T0468S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TXIN+)—(CTIN)—(TXIN—) : (TXO+)-(CTO)-CTXO-) 1.25CT : 1CT ± 3% (RXO+)—(RXO—) : (RXIN+)—(RXIN—) 1 : 1 ± 3% R X 1+<D_i^rH|if— INDUCTANCE:


    OCR Scan     		PDF 30KHz 125MHz 10OKHz 10MHz 30MHz 60MHz 80MHz T0468S 350uH 100KHz,

    42XS-3

    Abstract: No abstract text available
    Text: fax id: 5410 CY7C4425/4205/4215 _ CY7C4225/4235/4245 "64, 256, 512, 1K, 2K, 4K x 18 Synchronous FIFOs Features controlled by a free-running clock WCLK and a write enable pin (WEN). • High-speed, iow-power, first-in first-out (FIFO) memories


    OCR Scan     		PDF CY7C4425/4205/4215 CY7C4225/4235/4245 CY7C4425) CY7C4205) CY7C4215) CY7C4225) CY7C4235) CY7C4245) 100-MHz 64-Lead 42XS-3

    LR33300

    Abstract: LR33310 J14028 LR3330 2 TZ 11w LR33300MC20 LSI DP3 LR33310MC lr3331 lsi lr33310
    Text: LR33300 and LR33310 Self-Embedding Processors User’s Manual LSI LOCK Addendum Addendum Number A000379 Order Number for Manual J14028 Introduction This addendum to the LR33300 and LR33310 Self-Embedding Proces­ sors User’s Manual specifies the LR333xO’s electrical and mechanical


    OCR Scan     		PDF LR33300 LR33310 A000379 J14028 LR333xO J14028-AD-2 J14028 LR3330 2 TZ 11w LR33300MC20 LSI DP3 LR33310MC lr3331 lsi lr33310

    C30844

    Abstract: C30845 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector
    Text: RC/1 E G & G/CA N A D A / O P T OELEK 3G30fc.lD ODOOIDI Tfl4 « C A N A IO Electro Photodiode C30843 Optics C30844, C30845, C30846 DATA SHEET Quadrant N-Type Silicon p-i-n Photodetectors • Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2 ■ Low Operating \foltage —


    OCR Scan     		PDF C30843 C30844, C30845, C30846 25-mm C30843, C30845 C30844 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector

    schematic diagram tv sony kv 2197

    Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
    Text: HOW TO USE THIS BOOK If you know the MODEL NUMBER, Use the Model Index on the INSIDE FRONT COVER. If you know the PRODUCT TYPE, Use the TABBED TABLE OF CONTENTS on page v. Or, use the SELECTION GUIDE TABLES at the front of each tabbed section. If you know the M ODEL


    OCR Scan     		PDF TX712 TX811 schematic diagram tv sony kv 2197 scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N S [ ADC80MAH-12 1 AVAILABLE IN DIE FORM Monolithic 12-Bit ANALOG-TO-DIGITAL CONVERTER reduced resolution, and an external clock may be used to synchronize the converter to the system clock or to obtain higher-speed operation. The convert


    OCR Scan     		PDF ADC80MAH-12 12-Bit 12-BIT 25//S 32-PIN 705mW ADC80MAH-12 ADC80

    18CV8

    Abstract: 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 PEEL18CV8 AMI PEEL18CV8
    Text: AMI PEEL 18CV8 SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 18CV8 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 AMI PEEL18CV8

    3QA18

    Abstract: DP59CF232K
    Text: 256Kx8 FLASH/32Kx8 SRAM Combo Memory DP59CF232K M í C \i O S Y S T E M S DESCRIPTION: The DP59CF232K is a combination memory chip consist of 2M-bit Flash Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory' organized as 32K words by 8 bits.


    OCR Scan     		PDF 256Kx8 FLASH/32Kx8 DP59CF232K DP59CF232K 256K-bit 3QA18 59CFr

    Untitled

    Abstract: No abstract text available
    Text: A im • P EEL 18CV8L STANDARD PRODUCTS American Microsystems, Inc. March 1994 CMOS Programmable E lectrically Erasable Logic Device Features General Description The AMI PEEL18CV8L is a low voltage CMOS Programmable Electrically Erasable Logic device that


    OCR Scan     		PDF 18CV8L PEEL18CV8L

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC KM75C102A H2E D B 7=1^4142 OD112S1 3 BSM'fiK CMOS PROGRAMMABLE FLAG FIFO " T - i4! ''3>S Programmable-Flags, 1KX9 FIFO FEATURES DESCRIPTION • First-ln-First-Oiit Dual Port Memory —1K x 9 Organization • Very High Speed Independent of depth/width


    OCR Scan     		PDF OD112S1 KM75C102A 120mA 75C102A 32-Pin T-46-35

    18CV825

    Abstract: PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell PEEL18CV8 18CV8-15
    Text: PEEL 18CV8 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 General Description Features The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 464C2 480Kfi D014273 18CV825 PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell 18CV8-15

    22-25L

    Abstract: 22-35L 2235L
    Text: CMOS SyncFIFO ID T 7 2 2 0 5 L B ID T 7 2 2 1 5 L B ID T 7 2 2 2 5 L B ID T 7 2 2 3 5 L B ID T 7 2 2 4 5 L B 2 5 6 X 18, 5 1 2 X 1 8 ,1 0 2 4 x 18, 2 0 4 8 x 18 a n d 4 0 9 6 x 1 8 FEATURES: Both FIFOs have 18-bit input and output ports. The input port is controlled by a free-running clock WCLK , and a data


    OCR Scan     		PDF 18-bit 72205LB) 72215LB) 72225LB) 72235LB) 72245LB) 22-25L 22-35L 2235L

    56c55

    Abstract: No abstract text available
    Text: IDT72205LB IDT72215LB IDT72225LB IDT72235LB IDT72245LB CMOS SyncFlFO 256 X 18, 512 X 18,1024 x 18, 2048 x 18 and 4096 x 18 Integrated D evice Technology, Inc. FEATURES: Both FIFOs have 18-bit input and output ports. The input port is controlled by a free-running clock WCLK , and a data


    OCR Scan     		PDF IDT72205LB IDT72215LB IDT72225LB IDT72235LB IDT72245LB 18-bit 72205LB) 72215LB) 56c55

    18CV8

    Abstract: 18CV8-15 18CV815 ami equivalent gates 18CV825 PEEL18CV8
    Text: PEEL 18CV8 AMI SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


    OCR Scan     		PDF 18CV8 PEEL18CV8 480Ki2 480KD 18CV8 18CV8-15 18CV815 ami equivalent gates 18CV825

    Untitled

    Abstract: No abstract text available
    Text: W LÆPER^Ê C O ÌV I T V PI74FCT821T/823T/825T 25Í2 Series PI74FCT2821T/2823T Fast CMOS Bus Interface Registers Product Features: • P I74F C T 821T /823T /825T /2821T /2823T is pin com patible with bipolar FA ST Series at a higher speed and low er


    OCR Scan     		PDF /823T /825T /2821T /2823T 24-pin PI74FCT821T/823T/825T PI74FCT2821T/2823T

    T0459S

    Abstract: No abstract text available
    Text: InNET TECHNOLOGIES te c lln o ^ ^ e j j 3 t T0459S Electrical E L E C T R IC A L S P E C IF IC A T IO N S (REV. X TURNS RATIO: (T X IN + )-(T C T I N ) -C lX IN -) : ( T X O + ) -(T C T O )-( T X O -) 1CT : 1CT ± 3 * (RXO+)—(RCTO)—(RXO—) : (RXIN+)-(RCTIN)-(RXIN-)


    OCR Scan     		PDF T0459S 100KHZ, 100KHZ. 1500VAC 100KHZ 100MHz 0L253 nu603 T0459S

    3QA18

    Abstract: No abstract text available
    Text: 256Kx8 FLASH/32Kx8 SRAM Combo Memory DP59CF232 M í C \i O S Y S T E M S DESCRIPTION: The DP59CF232 is a combination memory chip consist of 2M-bit Flash Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory organized as 32K words by 8 bits.


    OCR Scan     		PDF 256Kx8 FLASH/32Kx8 DP59CF232 DP59CF232 256K-bit 0A184-00 3QA18