Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
96GHz
215GHz
DS120613
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A113
Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station
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MHVIC2114R2/D
MHVIC2114R2
MHVIC2114R2
A113
AN1955
AVX08051J1R0BBT
AVX08051J1R5BBT
AVX08051J2R2BBT
AVX08051J6R8BBT
TAJA105K035R
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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atc100a150
Abstract: power transistor gan s-band
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
atc100a150
power transistor gan s-band
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS130313
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top octave generator
Abstract: voltage controlled filter
Text: LMH6504 LMH6504 Wideband, Low Power, Variable Gain Amplifier Literature Number: SNOSA96C LMH6504 Wideband, Low Power, Variable Gain Amplifier General Description Features The LMH 6504 is a wideband DC coupled voltage controlled gain stage followed by a high-speed current feedback
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LMH6504
LMH6504
SNOSA96C
LMHTM6504
top octave generator
voltage controlled filter
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thermocouple gaas
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN
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RF3928280W
RF3928
RF3928
DS110317
thermocouple gaas
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XS110
Abstract: uwb transceiver uwb antenna "multipath performance" Freescale xs110
Text: Ultra-Wideband Technology XS110 UWB Solution for Media-Rich Wireless Applications XS110 Ultra-Wideband Solution Freescale’s XS110 Ultra-Wideband UWB solution provides full wireless connectivity implementing direct sequence ultra-wideband (DS-UWB) and the IEEE 802.15.3 media access
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XS110
uwb transceiver
uwb antenna
"multipath performance"
Freescale xs110
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Untitled
Abstract: No abstract text available
Text: LMH6702 LMH6702 1.7 GHz, Ultra Low Distortion, Wideband Op Amp Literature Number: SNOSA03E LMH6702 1.7 GHz, Ultra Low Distortion, Wideband Op Amp General Description Features The LMH6702 is a very wideband, DC coupled monolithic operational amplifier designed specifically for wide dynamic
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LMH6702
LMH6702
SNOSA03E
720MHz
10-bit
60MHz
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QFN "200 pin" PACKAGE
Abstract: RFVC1803PCK-410 RFVC1803 DS110829
Text: RFVC1803 RFVC1803 Wideband MMIC VCO with Buffer Amplifier, 6GHz to 9GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 6GHZ TO 9GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+3.5dBm Typical External Resonator Not Required Single Bias Supply: +5V at 53mA
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RFVC1803
RFVC1803
-97dBc/Hz
100kHz
DS110829
QFN "200 pin" PACKAGE
RFVC1803PCK-410
DS110829
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t40c
Abstract: ma5250
Text: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+4.0dBm Typical External Resonator Not Required Single Bias Supply: +5V at 53mA
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RFVC1802
RFVC1802
-99dBc/Hz
100kHz
DS110829
t40c
ma5250
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PC2713T
Abstract: s-parameter s11 s12 s21 5942
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band.
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PC3210TB
PC3210TB
PC2713T
s-parameter s11 s12 s21
5942
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Untitled
Abstract: No abstract text available
Text: CXA3299TN Wideband Pre-amplifier Description The CXA3299TN is a wideband Pre-amplifier for VTR head. 10 pin TSSOP Plastic Features • Operate on single +3.3 V power supply • Low power consumption Read : 58 mW • Ultra small package • Wideband (–3 dB) : 160 MHz (typ)
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CXA3299TN
CXA3299TN
10PIN
TSSOP-10P-L01
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LH6738MQ
Abstract: LH6738
Text: LMH6738 LMH6738 Very Wideband, Low Distortion Triple Op Amp Literature Number: SNOSAC1D LMH6738 Very Wideband, Low Distortion Triple Op Amp General Description Features The LMH6738 is a very wideband, DC coupled monolithic operational amplifier designed specifically for ultra high resolution video systems as well as wide dynamic range systems
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LMH6738
LMH6738
LH6738MQ
LH6738
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philips ferrite 4b1
Abstract: wideband amplifier philips ferrite core 4b1 vHF amplifier module OM2070 SC16 philips wideband amplifier module
Text: DISCRETE SEMICONDUCTORS DATA SHEET OM2070 Wideband amplifier module Product specification File under Discrete Semiconductors, SC16 1995 Nov 14 Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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OM2070
philips ferrite 4b1
wideband amplifier
philips ferrite core 4b1
vHF amplifier module
OM2070
SC16
philips wideband amplifier module
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gt 6312
Abstract: OM2050 SC16 MGD060 philips om2050 9 date sheet karachi board
Text: DISCRETE SEMICONDUCTORS DATA SHEET OM2050 Wideband amplifier module Product specification File under Discrete Semiconductors, SC16 1995 Nov 13 Philips Semiconductors Product specification Wideband amplifier module OM2050 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended -head as
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OM2050
MGD076
SCD45
143061/1000/01/pp12
gt 6312
OM2050
SC16
MGD060
philips om2050
9 date sheet karachi board
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laser diode 6 GHz
Abstract: Laser Transmitter Module transmitter circuit using laser diode 1550nm laser diode 5 Ghz photodiode amplifier 7.5 ghz photodiode bias circuit 1550nm laser diode 10 Ghz PB9020
Text: Advanced Product Bulletin PB9020 – Wideband Integrated Laser Transmitter Module Phasebridge offers a highly compact, ruggedized wideband, high dynamic range, chip-scale integrated laser transmitter module comprised of a wideband lithiumniobate modulator and bias photodiode,
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PB9020
PB9020
laser diode 6 GHz
Laser Transmitter Module
transmitter circuit using laser diode
1550nm laser diode 5 Ghz
photodiode amplifier 7.5 ghz
photodiode bias circuit
1550nm laser diode 10 Ghz
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BFQ67W
Abstract: PMBT3640 PMBTH10 BFM520
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE
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OT143
OT223
OT323
BFT25
BF747
BF547
BF547W
BFS17
BFS17W
BF689K
BFQ67W
PMBT3640
PMBTH10
BFM520
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Nippon capacitors
Abstract: No abstract text available
Text: Order this data sheet by MC13155/D MOTOROLA MC13155 SEMICONDUCTOR TECHNICAL DATA Advance Information Wideband FM IF WIDEBAND FM IF The MC13155 is a complete wideband FM detector designed for satellite TV and other wideband data and analog FM applications. This
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MC13155/D
MC13155
MC13155
1PHX33371-0
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N « E OPA3681 ] Triple Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable S' FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G = +2 WIDEBAND INA • BROADBAND VIDEO BUFFERS UNITY GAIN STABLE: 280MHz (G = 1) • HIGH OUTPUT CURRENT: 150mA
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OPA3681
225MHz
280MHz
150mA
OPA3681
ZZ212
17313bS
00325S2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.
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PC3210TB
WS60-00-1
C10535E)
P13959EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.
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PC3210TB
WS60-00-1
C10535E)
P13593EJ2V0DS00
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