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    WHAT FUNCTION THE POWER TRANSISTOR Search Results

    WHAT FUNCTION THE POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    WHAT FUNCTION THE POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SS49E

    Abstract: pololu pair of led and photo transistor Pololu 2284 motor 2N3904 NPN Transistor ss49e hall effect led digital watch circuit diagram SS49E hall 25Dx52L emitter phototransistor
    Text: M.E. 530.420 Lab 1: LEDs, Photo-Transistors, Hall-Effect Sensors, and Incremental Optical Encoders Louis L. Whitcomb ∗ Department of Mechanical Engineering G.W.C. Whiting School of Engineering The Johns Hopkins University Rev 02 Laboratory Due Date: 6:00PM Tuesday September 13, 2011 at 115 Hackerman Hall


    Original     		PDF

    2. GND 3. VOUT 4. Vin SOT-23-5

    Abstract: Voltage Regulator SOT-23-5 1.6mm*1.2mm 5. VOUT 3. GND 4. VIN SOT-23-5 LDO
    Text: RP101x Series Low Noise 0.6% Accuracy 300mA LDO The RP101x Series are CMOS-based LDO regulators featuring 300mA output. RP101x has the supply current as low as 18 A, which is far lower than current products. Due to a built-in transistor with low on-resistance of 0.87Ω at VSET=2.8V , RP101x provides a low


    Original     		RP101x 300mA 30ppm/ 1612-4/DFN 1612-4B? 2. GND 3. VOUT 4. Vin SOT-23-5 Voltage Regulator SOT-23-5 1.6mm*1.2mm 5. VOUT 3. GND 4. VIN SOT-23-5 LDO PDF

    1.6mm*1.2mm

    Abstract: No abstract text available
    Text: RP101x Series Low Noise 0.6% Accuracy 300mA LDO The RP101x Series are CMOS-based LDO regulators featuring 300mA output. RP101x has the supply current as low as 18 A, which is far lower than current products. Due to a built-in transistor with low on-resistance of 0.87Ω at VOUT=2.8V , RP101x provides a low


    Original     		RP101x 300mA 30ppm/ 1612-4/DFN 1612-4B? 1.6mm*1.2mm PDF

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


    Original     		AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: APE1705 150KHz, 3A PWM Buck DC/DC Converter ¬ GENERAL DESCRIPTION The APE1705 series are monolithic IC designed for a step-down DC/DC converter, and own the ability of driving a 3A load without additional transistor. It saves board space. The external shutdown function can be controlled by logic level and then come


    Original     		APE1705 150KHz, APE1705 150KHz PDF

    "EMRC13 series"

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: EMRC13 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal microelectro-mechanical system MEMS resonator and integrated a low-voltage positive emitter-coupled logic


    Original     		EMRC13 EMRC13 TEN10-005-042 "EMRC13 series" PDF

    "EMRC12 series"

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: EMRC12 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal microelectro-mechanical system MEMS resonator and integrated a low-voltage positive emitter-coupled logic


    Original     		EMRC12 EMRC12 TEN10-005-041 "EMRC12 series" PDF

    sine wave generator using LM358

    Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
    Text: University of North Carolina, Charlotte Department of Electrical and Computer Engineering ECGR 3157 EE Design II Spring 2011 Lab 1 Power Amplifier Circuits Issued: January 19, 2011_Due: February 4, 2011 In this assignment, you will build some basic amplifier circuits. Many of these amplifiers will


    Original     		LM741 sine wave generator using LM358 LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab PDF

    Untitled

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: E15C7 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal quartz bulk acoustic wave BAW crystal resonator and an integrated low-voltage positive emitter-coupled logic (LVPECL)


    Original     		E15C7 E15C7 TEN10-005-103 PDF

    "EMRC22 series"

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: EMRC22 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal microelectro-mechanical system MEMS resonator and integrated a low-voltage positive emitter-coupled logic


    Original     		EMRC22 EMRC22 TEN10-005-043 "EMRC22 series" PDF

    Untitled

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: E13C5 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal quartz bulk acoustic wave BAW crystal resonator and an integrated low-voltage positive emitter-coupled logic (LVPECL)


    Original     		E13C5 E13C5 TEN10-005-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: E15C5 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal quartz bulk acoustic wave BAW crystal resonator and an integrated low-voltage positive emitter-coupled logic (LVPECL)


    Original     		E15C5 E15C5 TEN10-005-101 PDF

    "EMRC23 series"

    Abstract: No abstract text available
    Text: Frequently Asked Questions Rev B For Series: EMRC23 1. What is this oscillator series? This series of devices are oscillators where the output frequency is primarily controlled by an internal microelectro-mechanical system MEMS resonator and integrated a low-voltage positive emitter-coupled logic


    Original     		EMRC23 EMRC23 TEN10-005-044 "EMRC23 series" PDF

    IGBT loss calculate

    Abstract: UC3726N UC3727N UNITRODE product and applications handbook ELECTRICAL CALCULATION FOR TRANSFORMER
    Text: DN-57 Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized for driving Insulated Gate Bipolar Transistors IGBTs , the UC3726N/UC3727N IGBT driver pair is a very versatile and cost effective solution for


    Original     		DN-57 UC3726N/UC3727N UC3726N UC3727N UC3726/UC3727 U-143C) U-143C. 15kHz UC3726N, IGBT loss calculate UC3727N UNITRODE product and applications handbook ELECTRICAL CALCULATION FOR TRANSFORMER PDF

    gilbert cell differential pair

    Abstract: HFA3101 pnp 8 transistor array 5.1 transistor amplifier circuit diagram AN9744 974-4 Transistor Array differential amplifier NPN PNP Transistor Arrays HFA3046 HFA3096
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note June 2004 Linear Arrays Have Advantages Over Discrete Transistors R4 100Ω R1 2kΩ Q4 Q5 R2 15kΩ RF 240Ω R3 1kΩ C1 1nF RS 50Ω VS 5V - L1 1µH VO Q2 C2 1nF + C3 1nF RL 50Ω


    Original     		HFA3101 gilbert cell differential pair HFA3101 pnp 8 transistor array 5.1 transistor amplifier circuit diagram AN9744 974-4 Transistor Array differential amplifier NPN PNP Transistor Arrays HFA3046 HFA3096 PDF

    8 ohm 0.25w SPEAKER

    Abstract: cuckoo clock cuckoo MSS0306 TG16 TG17 TG32 8 ohm 0.25w buzzer 5100H
    Text: MOSEL VITELIC MSS0306 3" VOICE ROM Features Single power supply can operate at 2.4V through 4.5V. Current output can drive 8 ohm speaker with a transistor. The voice content is stored up to 3.5 seconds 5100h and can be separated to 8 sections. Five trigger input pins are provided. Each trigger


    Original     		MSS0306 5100h) 20000h) PID239 8 ohm 0.25w SPEAKER cuckoo clock cuckoo MSS0306 TG16 TG17 TG32 8 ohm 0.25w buzzer 5100H PDF

    AN9744

    Abstract: gilbert cell differential pair GILBERT CELL HFA3101 an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2


    Original     		AN9744 HFA3101 AN9744 gilbert cell differential pair GILBERT CELL an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046 PDF

    HFA3101

    Abstract: sot36 transistor arrays 5v AN9744 Transistor Arrays NPN General Purpose Transistor gilbert cell differential pair
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors [ RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2


    Original     		AN9744 HFA3101 sot36 transistor arrays 5v AN9744 Transistor Arrays NPN General Purpose Transistor gilbert cell differential pair PDF

    9744

    Abstract: 974-4 AN9744 gilbert cell 5.1 transistor amplifier circuit diagram HFA3127 PNP Transistor Arrays Intersil gilbert cell differential pair HFA3046 HFA3102
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays TM Application Note July 1997 Linear Arrays Have Advantages Over Discrete Transistors Q5 C1 1nF 5V - L1 1µH VO Q2 C3 1nF RL 50Ω RE 5.1Ω - + VS + FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER The advantages of linear arrays over discrete transistors are


    Original     		PDF

    Unitrode DN-57

    Abstract: UNITRODE product and applications handbook isolation gate drive transformer the calculation of the power dissipation for the IGBT ELECTRICAL CALCULATION FOR TRANSFORMER IGBT loss calculate Unitrode U-143C
    Text: DN-57 Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized for driving Insulated Gate Bipolar Transistors IGBTs , the UC3726N/UC3727N IGBT driver pair is a very versatile and cost effective solution for


    Original     		DN-57 UC3726N/UC3727N UC3726N UC3727N Unitrode DN-57 UNITRODE product and applications handbook isolation gate drive transformer the calculation of the power dissipation for the IGBT ELECTRICAL CALCULATION FOR TRANSFORMER IGBT loss calculate Unitrode U-143C PDF

    a1270* transistor

    Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
    Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


    Original     		R123-R181, 5091-6489E 5968-1410E a1270* transistor computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141 PDF

    a1270* transistor

    Abstract: 1689c hp plotter
    Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


    Original     		5091-6489E 5968-1410E a1270* transistor 1689c hp plotter PDF

    transistor lt 6229

    Abstract: D239 TRANSISTOR Transistor ml5 similar 5100H
    Text: MSS0306 M OSEL VITELIC 3" VOICE ROM Features • Single power supply can operate at 2.4V through 4.5V. ■ Current output can drive 8 ohm speaker with a transistor. ■ The voice content is stored up to 3.5 seconds 5100h and can be separated to 8 sections.


    OCR Scan     		MSS0306 5100h 20000h) b3S33Tl PID239 transistor lt 6229 D239 TRANSISTOR Transistor ml5 similar PDF

    AR328

    Abstract: motorola AR328
    Text: AR328/D APPLICATIONSPECIFIC TRANSISTORS Prepared by Kristi James, Senior Engineer and Warren Schultz, Member of the Technical Staff Motorola Inc., Semiconductor Products Sector Phoenix, Arizona Reprinted with permission of POWERTECHNICS, March, 1989 issue.


    OCR Scan     		AR328/D C64768 AR328 motorola AR328 PDF