WG 753 Search Results

M306NBFCTFP

Abstract: M306NAFGTFP LCD 7640 m37970 m37760 M30621FCMGP m32r ecu da 3807 M38507F8FP m32r flash
Contextual Info: Selection Internal Peripheral Functions Flash MCUs Bit Family 32 M32R Series Group 32170 12 • 40 M32170FxVFP/WG 32171 12 • 40 M32171FxVFP 32172 32173 12 • 40 12 • 40 M32172F2VFP/WG M32173F2VFP/WG 32174 12 • 40 M32174FxVFP/WG M32C/80 12 • 40 M32C/83

NE24200

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and

NE32400

Abstract: NE32400M NE32400N
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im

ne324

Abstract: NE32400
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip

NE24200

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at < - 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at < = 12 GHz m T3 • L g = 0.25 jim , Wg = 200 jim

Citric Acid

Abstract: 6731-03 AC103 "Pressure Switches"
Contextual Info: 6731 / 6732 ~ Low Pressure Switches Benefits ❖ These switches have been designed primarily for the OEM manufacturer who requires low cost and high reliability ❖ The switches have excellent repeat accuracy ❖ Double pole switching available upon request

8-12 GHz Yig Tuned Oscillator

Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
Contextual Info: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,

Hp 4619

Abstract: HERGAIR 6418-00 6742-30 6731-03 hergalite electronic water pressure switch HP 2531 water pressure switch rover 24130
Contextual Info: a Pressure & Vacuum Switches SWITCHING AND SENSING SOLUTIONS Herga Electric Limited is an independent UK manufacturer of switching systems. In addition to pressure and vacuum switches, we offer other innovative switching solutions:hergair herga hergalite herga

Herga

Abstract: 672110 7A60V
Contextual Info: 6721 / 6722 ~ Vacuum Switches Benefits ❖ These switches have been designed primarily for the OEM manufacturer who requires low cost and high reliability ❖ The switches have excellent repeat accuracy ❖ Double pole switching available upon request ❖ Wide choice of microswitch options available including

C5257

Contextual Info: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution

LM6462

Abstract: LM6464 LM103-3.6 54ACT3301 38510R75001 SMD MARKING CODE ACQ lm1242 MM54HC564 LH0041CJ 54AC00
Contextual Info: N 4 N TABLE OF CONTENTS Included in this guide are the Enhanced Solutions products that are offered by National Semiconductor, their qualification levels, and packages as well as available process flows, radiation testing, and other information that can support your design.

WR90 choke flange

Abstract: WR112 flange WR284 flange WR159 to 137 WR62 flange WR90 flange choke 75307 WR62 COMBINER WR284 waveguide choke flange dimension WR137 flange
Contextual Info: Great Service Excellent Price Fast Delivery BROADWALL DIRECTIONAL COUPLERS Description: Flg 3 • • • • Flg 4 C B Flg 1 Flg 2 W AV E G U I D E C O U P L E R S A 9 Basic Model No. 650-310 430-310 284-310 229-310 187-310 159-310 137-310 112-310 90-310

LM6462

Abstract: LF411 "direct replacement" LH0032ACG LM6464 LM646 VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM35,3 sensor vhdl 4-bit binary calculator ADC1231 lm2940-8
Contextual Info: N Military/Aerospace Division Product Line Card 1997 N www.national.com/appinfo/milaero/ Table of Contents At National Semiconductor , it’s about innovation. One of the largest suppliers of IC products for high reliability applications, we’ve provided analog and mixedsignal engineering for the Military/Aerospace market for more than 30 years. Our expertise in system design and

W538

Contextual Info:  MCP809/810 0LFURFRQWUROOHU 6XSHUYLVRU\ &LUFXLW ZLWK 3XVK3XOO 2XWSXW HDWXUHV 3DFNDJHV ‡ +ROGV PLFURFRQWUROOHU LQ UHVHW XQWLO VXSSO\ YROWDJH UHDFKHV VWDEOH RSHUDWLQJ OHYHO ‡ 5HVHWV PLFURFRQWUROOHU GXULQJ SRZHU ORVV ‡ 3UHFLVLRQ PRQLWRULQJ RI 9 9 DQG 9 V\VWHPV

Contextual Info:  MCP809/810 0LFURFRQWUROOHU 6XSHUYLVRU\ &LUFXLW ZLWK 3XVK3XOO 2XWSXW HDWXUHV 3DFNDJHV ‡ +ROGV PLFURFRQWUROOHU LQ UHVHW XQWLO VXSSO\ YROWDJH UHDFKHV VWDEOH RSHUDWLQJ OHYHO ‡ 5HVHWV PLFURFRQWUROOHU GXULQJ SRZHU ORVV ‡ 3UHFLVLRQ PRQLWRULQJ RI 9 9 DQG 9 V\VWHPV

Contextual Info: SSI 32P4752/4756 ó é m M ím Read Channel with 1,7 ENDEC, 4-burst Servo " A TDK G roup/C om pany January 1995 DESCRIPTION FEATURES The SSI 32P4752/4756 devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a complete zoned

Wamco

Abstract: AIC010f 32C452 ECC19 ECC31 AIC-010F GP100 GP103 SA100 ST412HP
Contextual Info: SSI 32C452 óiliconMhtts Storage Controller Preliminary Data July, 1990 DESCRIPTION FEATURES The SSI 32C452 Storage Controller is a CMOS device that provides the basis for an intelligent Winchester disk drive controller capable of non-interleaved data transfers at rates up to 20 Mbit/s. When combined with

Contextual Info: SSI 32P4904 m M M k m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ' A TDK Group/Company May 1996 Serial interface port for access to internal program storage registers DESCRIPTION The SSI 32P4904 is a high performance BiCMOS read channel 1C that provides all of the functions needed to

32D535

Abstract: decoding technique nrz DIAGRAM HP 4067
Contextual Info: SSI 32D535 Æ m s u s k m s Data Synchronizer/ 2, 7 RLL ENDEC with Write Precompensation May, 1990 FEATURES DESCRIPTION The SSI 32D535 Data Separator provides data recov­ ery, data encoding, and write precompensation for storage systems which employ a 2, 7 RLL encoding

FLC053

Abstract: FLC053WG
Contextual Info: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW