M306NBFCTFP
Abstract: M306NAFGTFP LCD 7640 m37970 m37760 M30621FCMGP m32r ecu da 3807 M38507F8FP m32r flash
Text: Selection Internal Peripheral Functions Flash MCUs Bit Family 32 M32R Series Group 32170 12 • 40 M32170FxVFP/WG 32171 12 • 40 M32171FxVFP 32172 32173 12 • 40 12 • 40 M32172F2VFP/WG M32173F2VFP/WG 32174 12 • 40 M32174FxVFP/WG M32C/80 12 • 40 M32C/83
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M32R/ECU
M32170FxVFP/WG
M32171FxVFP
M32172F2VFP/WG
M32173F2VFP/WG
M32174FxVFP/WG
M32C/80
M32C/83
M16C/80
M306NBFCTFP
M306NAFGTFP
LCD 7640
m37970
m37760
M30621FCMGP
m32r ecu
da 3807
M38507F8FP
m32r flash
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NE24200
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and
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NE32400
Abstract: NE32400M NE32400N
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip
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NE32400
NE32400
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NE32400M
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ne324
Abstract: NE32400
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip
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NE32400
NE32400
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ne324
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NE24200
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip
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NE24200
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Citric Acid
Abstract: 6731-03 AC103 "Pressure Switches"
Text: 6731 / 6732 ~ Low Pressure Switches Benefits ❖ These switches have been designed primarily for the OEM manufacturer who requires low cost and high reliability ❖ The switches have excellent repeat accuracy ❖ Double pole switching available upon request
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Hp 4619
Abstract: HERGAIR 6418-00 6742-30 6731-03 hergalite electronic water pressure switch HP 2531 water pressure switch rover 24130
Text: a Pressure & Vacuum Switches SWITCHING AND SENSING SOLUTIONS Herga Electric Limited is an independent UK manufacturer of switching systems. In addition to pressure and vacuum switches, we offer other innovative switching solutions:hergair herga hergalite herga
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Herga
Abstract: 672110 7A60V
Text: 6721 / 6722 ~ Vacuum Switches Benefits ❖ These switches have been designed primarily for the OEM manufacturer who requires low cost and high reliability ❖ The switches have excellent repeat accuracy ❖ Double pole switching available upon request ❖ Wide choice of microswitch options available including
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C5257
Abstract: No abstract text available
Text: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution
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12345646557889A68A6B
C5257
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LM6462
Abstract: LM6464 LM103-3.6 54ACT3301 38510R75001 SMD MARKING CODE ACQ lm1242 MM54HC564 LH0041CJ 54AC00
Text: N 4 N TABLE OF CONTENTS Included in this guide are the Enhanced Solutions products that are offered by National Semiconductor, their qualification levels, and packages as well as available process flows, radiation testing, and other information that can support your design.
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1-877-Dial-Die
LM6462
LM6464
LM103-3.6
54ACT3301
38510R75001
SMD MARKING CODE ACQ
lm1242
MM54HC564
LH0041CJ
54AC00
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75307
Abstract: WR284 waveguide choke flange dimension WR159 to 137 WR90 choke flange WR90 flange choke WR90 COAX WR187, power WR62 flange 284-Type WR42
Text: For a wide variety of BROADWALL DIRECTIONAL COUPLERS Description: • Full waveguide frequency range • Units pressure tested to 30 psi • Ideal for High Power Combiner/Divider • Finish is a unique corrosion-resistant 316 stainless steel epoxy coating
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WR650
WR430
WR284
WR229
WR187
WR159
WR137
WR112
137-Type
75307
WR284 waveguide choke flange dimension
WR159 to 137
WR90 choke flange
WR90 flange choke
WR90 COAX
WR187, power
WR62 flange
284-Type
WR42
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WR90 choke flange
Abstract: WR112 flange WR284 flange WR159 to 137 WR62 flange WR90 flange choke 75307 WR62 COMBINER WR284 waveguide choke flange dimension WR137 flange
Text: Great Service Excellent Price Fast Delivery BROADWALL DIRECTIONAL COUPLERS Description: Flg 3 • • • • Flg 4 C B Flg 1 Flg 2 W AV E G U I D E C O U P L E R S A 9 Basic Model No. 650-310 430-310 284-310 229-310 187-310 159-310 137-310 112-310 90-310
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316WR90
75-Type
62-Type
51-Type
42-Type
34-Type
28-Type
WR90 choke flange
WR112 flange
WR284 flange
WR159 to 137
WR62 flange
WR90 flange choke
75307
WR62 COMBINER
WR284 waveguide choke flange dimension
WR137 flange
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LM6462
Abstract: LF411 "direct replacement" LH0032ACG LM6464 LM646 VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM35,3 sensor vhdl 4-bit binary calculator ADC1231 lm2940-8
Text: N Military/Aerospace Division Product Line Card 1997 N www.national.com/appinfo/milaero/ Table of Contents At National Semiconductor , it’s about innovation. One of the largest suppliers of IC products for high reliability applications, we’ve provided analog and mixedsignal engineering for the Military/Aerospace market for more than 30 years. Our expertise in system design and
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W538
Abstract: No abstract text available
Text: MCP809/810 0LFURFRQWUROOHU 6XSHUYLVRU\ &LUFXLW ZLWK 3XVK3XOO 2XWSXW HDWXUHV 3DFNDJHV +ROGV PLFURFRQWUROOHU LQ UHVHW XQWLO VXSSO\ YROWDJH UHDFKHV VWDEOH RSHUDWLQJ OHYHO 5HVHWV PLFURFRQWUROOHU GXULQJ SRZHU ORVV 3UHFLVLRQ PRQLWRULQJ RI 9 9 DQG 9 V\VWHPV
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W538
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philips ecg master replacement guide
Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Text: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW
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32R2105RW
32R2110RW
32R2111RW
32R2112RU
32R2124RV
philips ecg master replacement guide
smd transistor WW1
ecg philips semiconductor master book
ww1 transistor smd
philips ecg replacement guide
fcs 9013
ECG transistor replacement guide book free
data sheet NPN 9013
smd marking hry
32R2024
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im
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NE32400
NE32400
str11
IS12I
lS22l
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim
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NE32400
NE32400
24-Hour
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Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at < - 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at < = 12 GHz m T3 • L g = 0.25 jim , Wg = 200 jim
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NE24200
NE24200
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8-12 GHz Yig Tuned Oscillator
Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
Text: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,
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MIL-C-45662)
S-126
17173-SILAB-S
S-163
8-12 GHz Yig Tuned Oscillator
PM7015X
yig oscillator hp
electromagnetic pulse generator jammer
SIVERS yig
PM7892
PM7288X
8-12 GHz Yig Tuned filter
PM7101X
x-band waveguide isolators
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Untitled
Abstract: No abstract text available
Text: SSI 32P4752/4756 ó é m M ím Read Channel with 1,7 ENDEC, 4-burst Servo " A TDK G roup/C om pany January 1995 DESCRIPTION FEATURES The SSI 32P4752/4756 devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a complete zoned
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32P4752/4756
32P4752/4756
32P4752-CGT
32P4756
64-Lead
32P4756-CGT
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Wamco
Abstract: AIC010f 32C452 ECC19 ECC31 AIC-010F GP100 GP103 SA100 ST412HP
Text: SSI 32C452 óiliconMhtts Storage Controller Preliminary Data July, 1990 DESCRIPTION FEATURES The SSI 32C452 Storage Controller is a CMOS device that provides the basis for an intelligent Winchester disk drive controller capable of non-interleaved data transfers at rates up to 20 Mbit/s. When combined with
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32C452
32C452
32C453,
Wamco
AIC010f
ECC19
ECC31
AIC-010F
GP100
GP103
SA100
ST412HP
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Untitled
Abstract: No abstract text available
Text: SSI 32P4904 m M M k m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ' A TDK Group/Company May 1996 Serial interface port for access to internal program storage registers DESCRIPTION The SSI 32P4904 is a high performance BiCMOS read channel 1C that provides all of the functions needed to
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32P4904
32P4904
fl253Tb5
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32D535
Abstract: decoding technique nrz DIAGRAM HP 4067
Text: SSI 32D535 Æ m s u s k m s Data Synchronizer/ 2, 7 RLL ENDEC with Write Precompensation May, 1990 FEATURES DESCRIPTION The SSI 32D535 Data Separator provides data recov ery, data encoding, and write precompensation for storage systems which employ a 2, 7 RLL encoding
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32D535
32D535
external535
28-Pin
32D535-
decoding technique nrz DIAGRAM
HP 4067
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FLC053
Abstract: FLC053WG
Text: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general
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FLC053WG
FLC053WG
FLC053
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