Solid State Relays
Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
Text: HEATSINK DIMENSIONS WG - K3/160 Screw thread M4 x 6mm 0.16x0.24 / 10 pieces WG - K1/100 B/D Snap-on-rail 35 (1.38) 100 (3.94) B B A A B Snap-on-rail 35 (1.38) B 160 (6.3) A 20 (0.79) D C 3.0 (0.12) Snap-on-rail mounting Snap-on-rail mounting 1.5 (0.06) Counterbore for grounding
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K3/160
K2/100
Solid State Relays
gunther relay. 3700
WG A8 6D 03 Z
TRIAC 20A 600V
WG A5 6D 25
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Untitled
Abstract: No abstract text available
Text: Solid State Relays Datasheet WG 420 D.Z - MR Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Switching Zero cross Output Back to back SCR Control input DC typ. 2mA digital
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24VDC)
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509226
Abstract: 509068 centrifugal blower 498025 RS 261 328 shaded pole motor 583331 250 MF CAPACITOR 160 V.ac 60Hz 84HP spade terminal pcb
Text: Issued March 1996 021-035 Data Pack B/K Data Sheet ac fans, blowers and accessories A comprehensive range of ac fans, blowers and accessories covering axial fan frame sizes up to 172mm2 and blower sizes up to 226mm ϫ 261mm. All fans and blowers are offered with a full range of
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172mm2
226mm
261mm.
120mm
365mm
509226
509068
centrifugal blower
498025
RS 261 328
shaded pole motor
583331
250 MF CAPACITOR 160 V.ac 60Hz
84HP
spade terminal pcb
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lsc 3120
Abstract: ispLSI 1015
Text: Package Diagrams Index of Package Diagrams 120-Pin PQFP . 128-Pin PQFP . 128-Pin TQFP .
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120-Pin
128-Pin
133-Pin
160-Pin
176-Pin
208-Pin
240-Pin
lsc 3120
ispLSI 1015
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LM6462
Abstract: LF411 "direct replacement" LH0032ACG LM6464 LM646 VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM35,3 sensor vhdl 4-bit binary calculator ADC1231 lm2940-8
Text: N Military/Aerospace Division Product Line Card 1997 N www.national.com/appinfo/milaero/ Table of Contents At National Semiconductor , it’s about innovation. One of the largest suppliers of IC products for high reliability applications, we’ve provided analog and mixedsignal engineering for the Military/Aerospace market for more than 30 years. Our expertise in system design and
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AT93C46SC
Abstract: AT88SC0404C AT88SC0808C AT24C01ASC AT88SC0104C AT88SC0204C AT88SC101 AT88SC102 AT88SC153 AT88SC1608
Text: Smart Card Module Ordering Codes Ordering Code: 09CT Ordering Code: 09NT Module Size: M4 Dimension*: 12.6 x 12.6 [mm] Glob Top: Square – 9.0 x 9.0 [mm] Thickness: 0.58 [mm] Pitch: 14.25 mm Module Size: M2 Dimension*: 12.6 x 11.4 [mm] Glob Top: Square – 8.8 x 8.8 [mm]
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AT88SC0104C
AT88SC0204C
AT88SC0404C
AT88SC0808C
AT88SC1616C
AT88SC101
AT88SC102
AT88SC153
AT88SC1608
AT24C01ASC
AT93C46SC
AT88SC0404C
AT88SC0808C
AT24C01ASC
AT88SC0104C
AT88SC0204C
AT88SC101
AT88SC102
AT88SC153
AT88SC1608
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80Au-20Sn
Abstract: 7421 AND gate LS 8227 TC1202 05288
Text: TRANSCOM TC1202 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • PHOTO ENLARGEMENT Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 300 µm All-Gold Metallization for High Reliability
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TC1202
TC1202
80Au-20Sn
7421 AND gate
LS 8227
05288
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TA 8659
Abstract: ta 8659 an TC1102 8913 ta 8659 anG TC110-2 super Low Noise Gaas S11012
Text: TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • PHOTO ENLARGEMENT Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability
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TC1102
TC1102
TA 8659
ta 8659 an
8913
ta 8659 anG
TC110-2
super Low Noise Gaas
S11012
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LM6462
Abstract: LM6464 LM103-3.6 54ACT3301 38510R75001 SMD MARKING CODE ACQ lm1242 MM54HC564 LH0041CJ 54AC00
Text: N 4 N TABLE OF CONTENTS Included in this guide are the Enhanced Solutions products that are offered by National Semiconductor, their qualification levels, and packages as well as available process flows, radiation testing, and other information that can support your design.
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1-877-Dial-Die
LM6462
LM6464
LM103-3.6
54ACT3301
38510R75001
SMD MARKING CODE ACQ
lm1242
MM54HC564
LH0041CJ
54AC00
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at88sc1604
Abstract: AT93C46SC AT88SC1601 AT24C04SC AT24C02SC AT24C01ASC AT24C08SC AT88SC101 AT88SC102 AT88SC153
Text: Smart Card Module Ordering Codes Ordering Code: 09CT Ordering Code: 09NT Module Size: M4 Dimension*: 12.6 x 12.6 [mm] Glob Top: Square - 9.0 x 9.0 [mm] Thickness: 0.58 [mm] Pitch: 14.25 mm Module Size: M2 Dimension*: 12.6 x 11.4 [mm] Glob Top: Square - 8.8 x 8.8 [mm]
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AT88SC101
AT88SC102
AT88SC153
AT88SC1601
AT88SC1604
AT88SC1608
AT24C01ASC
AT24C02SC
AT24C04SC
AT24C08SC
at88sc1604
AT93C46SC
AT88SC1601
AT24C04SC
AT24C02SC
AT24C01ASC
AT24C08SC
AT88SC101
AT88SC102
AT88SC153
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jsmk
Abstract: WG12020 WG6018F WG12020FR westcode wg WG5020F WG50 SM-CXC170 WG6018 WG6018FR
Text: ÜIESTCODE SEMICONDUCTORS 3TE T e s t c o n d it io n s All figures in tables are for Tj = 125°C unless otherwise indicated. Standard test conditions for all devices. D • «HO W S DODSMSÖ 1 ■ ÜIESBT'O.S'-Ol di/dt of I qm > 15A//uS V D = 0.5 V DRM ti ^ 10nS
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10jiS
WG100
WG120
WG140
WG5020
SM-CXC134t
SM-CXC624
SM-CXC170
jsmk
WG12020
WG6018F
WG12020FR
westcode wg
WG5020F
WG50
SM-CXC170
WG6018
WG6018FR
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WG25008SM
Abstract: WG5018 WG5026S westcode wg WG15026R WG6006RXX WG7008S Diode Westcode Gate Turn-Off Thyristors all types of thyristors
Text: Gate Turn-off Thyristors ~ All types Symmetrical Types V DRM Type V RRM V6K ^TGQM @ CS Note 1 WG5012Rxx to 25Rxx T(AV) t V GK = -2V (Note 1) (Note 2) -w r (Note 3) I 2t •^T(RMS) ■^TSM(l) ^TSM(2) Tmse = 25°C 10ms 2 ms (Note 3) (Note 4) (Note 4) (A2s)
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WG5012Rxx
25Rxx
WG6006RXX
18Rxx
WG9006Rxx
14Rxx
WG10026RXX
36Rxx
WG10037Rxxto
45Rxx
WG25008SM
WG5018
WG5026S
westcode wg
WG15026R
WG7008S
Diode Westcode
Gate Turn-Off Thyristors
all types of thyristors
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Avantek awt
Abstract: AMT-40048 Avantek UT AWT-40039 AMT-26134 AMT-40077 Avantek amt 18-26.5 GHz Avantek rf amplifier AMT-40037 AMT-40034
Text: AMT, AWT Series: Wideband Millimeter Amplifiers Features AMT/AWT Series 18 to 40 GHz • High Performance, Wide Band • 18 through 40 GHz • Low Noise Figure • Wide Dynamic Range Description on these series and specifications are guaranteed over the specified temperature range.
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1-800-AVANTEK
UG-599/U
WR-28
599/U
CA95054
Avantek awt
AMT-40048
Avantek UT
AWT-40039
AMT-26134
AMT-40077
Avantek amt 18-26.5 GHz
Avantek rf amplifier
AMT-40037
AMT-40034
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PL509
Abstract: PENTODE PL509 tube PL509 pl509 tube Scans-0017999
Text: PL509 LINE O U TP U T PENTODE Output pentode intended for colour TV line deflection circu its. QUICK REFERENCE DATA Anode peak voltage 7000 Cathode current % Ik m ax. 500 Anode dissipation Wa max. 30 V mA W HEATING: Indirect by A .C . or D .C .; se rie s supply
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PL509
7Z06730
PL509
PENTODE PL509
tube PL509
pl509 tube
Scans-0017999
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HY5118160
Abstract: HYM532120
Text: •HYUNDAI HYM532120 W -Series 1 M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each
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HYM532120
32-bit
HY5118160
HYM532120W/SLW/TW/SLTW
HYM532120WG/SLWG
HYM532120T/SLT
4b750flfl
1CC03-10-DEC94
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U2531
Abstract: pdcr 960 U2531B
Text: SSI 32P4340 d k o n s ifs k m 3V Read Channel Device with 1,7 ENDEC, 4-Burst Servo s A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 32P4340 is a high performance BiCMOS single chip read channel 1C that contains all the functions needed to implement a complete zoned
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32P4340
32P4340
U2531
pdcr 960
U2531B
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32P4904
Abstract: No abstract text available
Text: SSI 32P4904 m m M k m s PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo ' A TDK Group/Company Sempterber 1 9 9 5 AUTOMATIC GAIN CONTROL DESCRIPTION The SSI 32P4904 is a high performance BiCMOS read channel 1Cthat provides all of the functions needed to implement an entire Partial Response Class 4 PR4
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32P4904
32P4904
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Untitled
Abstract: No abstract text available
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
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NE32500,
NE27200
NE32500
NE27200
NE32500
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32p4904-cg
Abstract: 32H6521 32P4904 4 MHZ KDS 6b analog servo fundamentals
Text: SSI 32P4904 M c o n M fe r n PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo i' A TDK Group/Company Sempterber 1995 AUTOMATIC GAIN CONTROL DESCRIPTION The SSI 32P4904 is a high performance BiCMOS read channel 1Cthat provides all of the functions needed to
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32P4904
32P4904
32p4904-cg
32H6521
4 MHZ KDS 6b
analog servo fundamentals
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Untitled
Abstract: No abstract text available
Text: LOW NOISE LTO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 G H z 24 HIGH ASSOCIATED GAIN: 21 7 .5 dB typical at 12 G H z Lg = 0.3 |im, Wg = 280 }im 1H m •Q
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NE76038
IS12I
b427S25
NE76038
NE76038-T1
aab5503
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Untitled
Abstract: No abstract text available
Text: SSI 32P4904 m M M k m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ' A TDK Group/Company May 1996 Serial interface port for access to internal program storage registers DESCRIPTION The SSI 32P4904 is a high performance BiCMOS read channel 1C that provides all of the functions needed to
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32P4904
32P4904
fl253Tb5
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D0310
Abstract: No abstract text available
Text: KMM5321200BW DRAM Module ELECTRONICS KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5321200BW is a 1M bit x 32 - KMM5321200BW 1024 cycles/16ms Ref, SOJ, Solder
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KMM5321200BW
KMM5321200BW/BWG
1Mx32
1Mx16
KMM5321200BW
cycles/16ms
KMM5321200BWG
D0310
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viterbi algorithm
Abstract: No abstract text available
Text: ABRIDGED VERSION AI SSI 34P3500 w m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ifs k tn s A TDK G roup/Company Advance Information December 1995 DESCRIPTION FEATURES The SSI 34P3500 is a high performance BiCMOS read channel 1C that provides all of the functions needed to
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34P3500
34P3500
573-60QQ,
001503b
viterbi algorithm
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nec 151
Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.
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NE32900
NE32900
nec 151
transistor NEC ka 42
NEC D 553 C
nec, hetero junction transistor
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