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    WDT 2005 EP Search Results

    WDT 2005 EP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-174RASMAX2-005 Amphenol Cables on Demand Amphenol CO-174RASMAX2-005 SMA Right Angle Male to SMA Right Angle Male (RG174) 50 Ohm Coaxial Cable Assembly 5ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-316RASMAX2-005 Amphenol Cables on Demand Amphenol CO-316RASMAX2-005 RG316 High Temperature Teflon Coaxial Cable - SMA Right Angle Male to SMA Right Angle Male 5ft Datasheet
    CO-174BNCRAX2-005 Amphenol Cables on Demand Amphenol CO-174BNCRAX2-005 BNC Right Angle Male to BNC Right Angle Male (RG174) 50 Ohm Coaxial Cable Assembly 5ft Datasheet
    CO-213NTYPEX2-005 Amphenol Cables on Demand Amphenol CO-213NTYPEX2-005 Type N Male to Type N Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5ft Datasheet

    WDT 2005 EP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Feeling Technology

    Abstract: FM8P56EP lvdt DC-20 PHB6 FM8P56ED
    Text: FEELING TECHNOLOGY FM8P54/56 EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: ‧ FM8P54E/56E : EPROM devices ‧ FM8P54/56 : Mask ROM devices FEATURES ‧ Only 42 single word instructions ‧ All instructions are single cycle except for program branches which are two-cycle


    Original     		FM8P54/56 FM8P54E/56E 13-bit DC-20 DC-100 FM8P54/54E FM8P56/56E 49/FM8P54/56 Feeling Technology FM8P56EP lvdt PHB6 FM8P56ED PDF

    MDT2005

    Abstract: No abstract text available
    Text: MDT2005 IB 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 0.5 K(for MDT2005) bytes of ROM, and 32 bytes of


    Original     		MDT2005 MDT2005) MDT2005 PDF

    lvdt

    Abstract: DC-20 at8p
    Text: CP80S54/56 EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: ‧ CP80S54E/S56E : EPROM devices ‧ CP80S54/S56 : Mask ROM devices FEATURES ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧


    Original     		CP80S54/56 CP80S54E/S56E CP80S54/S56 13-bit DC-20 DC-100 CP80S56/S56E CP80S54/S54E 46/CP80S54/S56 lvdt at8p PDF

    MDT2010

    Abstract: No abstract text available
    Text: MDT2010 IB 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of


    Original     		MDT2010 MDT2010) MDT2010 PDF

    MDT10P05

    Abstract: No abstract text available
    Text: MDT10P05 BE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity. On chip memory system includes 0.5 K words of ROM, and 32 bytes of static RAM.


    Original     		MDT10P05 PDF

    MDT10P10

    Abstract: No abstract text available
    Text: MDT10P10 BE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity. On chip memory system includes 1.0 K words of ROM, and 32 bytes of static RAM.


    Original     		MDT10P10 PDF

    MDT2010

    Abstract: 3.0 N1
    Text: MDT2010 JE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of


    Original     		MDT2010 MDT2010) MDT2010 3.0 N1 PDF

    LDR 03 datasheet

    Abstract: mdt2020 200H 400H
    Text: MDT2020 DF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 2.0 K bytes of ROM, and 80 bytes of static RAM.


    Original     		MDT2020 14-bit MDT2020 LDR 03 datasheet 200H 400H PDF

    MDT10P55B1S

    Abstract: MDT10P55B1P mdt10p55b3p MDT10P55B 000-3FF
    Text: MDT10P55B u Power-on Reset u Power edge-detector Reset This EPROM-Based 8-bit micro-controller uses a fully u Sleep Mode for power saving static CMOS technology process to achieve higher u 5 types of oscillator can be selected by 1. General Description speed


    Original     		MDT10P55B 600uA 1000ns MDT10P55B1S MDT10P55B1P mdt10p55b3p MDT10P55B 000-3FF PDF

    ldr 6k

    Abstract: 200H 400H MDT2030
    Text: MDT2030 AE 150 µs, 20 ms, 40 ms, 80 ms 1. General Description u This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve high programmable prescaler u speed, small size, the low power and high noise On chip memory includes 2K words EPROM, and


    Original     		MDT2030 MDT2030 ldr 6k 200H 400H PDF

    transistor BC 550

    Abstract: 200H 400H MDT10P20
    Text: MDT10P20 BC 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 2.0 K bytes of ROM, and 80 bytes of static RAM.


    Original     		MDT10P20 14-bit MDT10P20 transistor BC 550 200H 400H PDF

    ldr 6k

    Abstract: MDT10P22 200H
    Text: MDT10P22 BE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 1K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref


    Original     		MDT10P22 and80 14-bit MDT10P22 ldr 6k 200H PDF

    ldr 6k

    Abstract: 200H MDT10P22 MDT10P23
    Text: MDT10P23 AE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref


    Original     		MDT10P23 and80 14-bit MDT10P23 ldr 6k 200H MDT10P22 PDF

    MDT10P61

    Abstract: 000-3FF
    Text: MDT10P61 1. General Description This EPROM-Based 8-bit micro-controller uses a fully u Power range-detector Reset u Sleep Mode for power saving u 3 interrupt sources: static CMOS technology process to achieve higher -External INT pin speed -TMR0 timer and


    Original     		MDT10P61 MDT10P61 000-3FF PDF

    MDT10P72

    Abstract: No abstract text available
    Text: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise


    Original     		MDT10P72 16-bit MDT10P72 PDF

    MDT10P721

    Abstract: 455k xtal 730u
    Text: MDT10P721 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise


    Original     		MDT10P721 16-bit MDT10P721 455k xtal 730u PDF

    MDT2051

    Abstract: 000-3FF
    Text: MDT2051 1. General Description u This EPROM-Based 8-bit micro-controller uses a fully -Four analog inputs multiplexed into one A/D static CMOS technology process to achieve higher speed and smaller size with the low converter power consump-tion and high noise immunity. On chip


    Original     		MDT2051 MDT2051 000-3FF PDF

    ldr 6k

    Abstract: 200H MDT10P23
    Text: MDT10P23 CC 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref


    Original     		MDT10P23 and80 14-bit MDT10P23 ldr 6k 200H PDF

    LDR 6K

    Abstract: 200H MDT10P22
    Text: MDT10P22 DC 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 1K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref


    Original     		MDT10P22 and80 14-bit MDT10P22 LDR 6K 200H PDF

    MDT10P621

    Abstract: 1u 5V
    Text: MDT10P621 -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip


    Original     		MDT10P621 16-bit MDT10P621 1u 5V PDF

    TMR31

    Abstract: TMR37 TMR36 TMR35 T1-6 PR37 DC-20 FM8P51 FM8P51E TMR27
    Text: FEELING TECHNOLOGY FM8P51 EPROM/ROM-Based 8-Bit Microcontroller Devices Included in this Data Sheet: ‧ FM8P51E : EPROM device ‧ FM8P51 : Mask ROM device FEATURES ‧ Only 47 single word instructions ‧ All instructions are single cycle except for program branches which are two-cycle


    Original     		FM8P51 FM8P51E 13-bit DC-20 DC-100 59/FM8P51 FM8P51EP FM8P51EF TMR31 TMR37 TMR36 TMR35 T1-6 PR37 FM8P51 FM8P51E TMR27 PDF

    LDR 6K

    Abstract: 910U MDT10P64
    Text: MDT10P64 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static u Synchronous serial port with SCM u Parallel communication mode PCM u TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count


    Original     		MDT10P64 16-bit LDR 6K 910U MDT10P64 PDF

    910U

    Abstract: ldr 6k MDT10P74
    Text: MDT10P74 1. General Description -Port B<7:4> interrupt on change -CCP1, CCP2, SCM, USAR, USAT, PCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -8 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise


    Original     		MDT10P74 16-bit 910U ldr 6k MDT10P74 PDF

    910U

    Abstract: ldr 6k MDT10P651
    Text: MDT10P651 1. General Description -CCP1, CCP2, SCM, USAR, USAT, PCM u TMR0 : 8-bit real time clock/counter This EPROM-Based 8-bit micro-controller uses a fully static TMR1 : 16-bit real time clock/count CMOS technology process to achieve higher speed and TMR2 : 8-bit clock/counter internal


    Original     		MDT10P651 16-bit 910U ldr 6k MDT10P651 PDF