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    W50N10

    Abstract: STW50N10
    Text: W50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST W50N10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.035 Ω 50 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original
    STW50N10 W50N10 100oC 175oC O-247 W50N10 STW50N10 PDF