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    Anytek Technology Corporation Ltd HW1670000000G

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    Anytek Technology Corporation Ltd HW1670830000G

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    Anytek Technology Corporation Ltd HW1670030000G

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    Anytek Technology Corporation Ltd HW1670820000G

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    Anytek Technology Corporation Ltd HW1670800000G

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    W16 70 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PD-1503

    Abstract: pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704
    Text: SSOP SSOP H20 H24 TSSOP L8 L20 A56 L14 L24 L16 L28 Q16 Q24 Q20 Q28 TFBGA NC64 SOIC W8 S24 PDIP W14 P20 S28 V56 A48 QSOP SOIC W16 H28 TSSOP S16 V48 BQSOP K56 B48 K48 B40 SOT23 T5 C6 T6 NA256 PBGA MSOP ZB56 PLCC J44 NA272 LFBGA NB64 NB96 NB114 U8 QFN J32 B80


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    NA256 NA272 NB114 PD-1501 MO-153ED TSSOP-56 PD-1502 MO-153EE SSOP-56 PD-1402 PD-1503 pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704 PDF

    U100

    Abstract: MB91F469 P-316 P356 b20 p03
    Text: 1 2 3 4 5 R100 6 8 7 MONCLK GND X0 X1 A1 D8 D13 D17 A20 H17 N17 U17 Y20 Y15 U13 U8 U4 Y1 N4 H4 D4 Y19 Y18 Y17 D6 D11 D15 F17 L17 R17 U15 U10 U6 R4 K4 F4 A16 A15 A18 T19 R18 M19 N20 W17 W16 U14 V14 W15 C16 C15 Y16 U16 V17 V16 V15 G18 G17 F19 F18 E20 E19 E18


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    MB91F469G VCC18C VDD35 RES01 RES03 RES05 RES07 RES09 RES11 U100 MB91F469 P-316 P356 b20 p03 PDF

    cf 455

    Abstract: 455 XTAL cf 455 a fm 485 Delta W16 transistor w16 CMX7031 cf-455 PE0201 4C00
    Text: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX7031 Synthesiser Lock Time Publication: AN/2WR/7031SYNTH/1 March 2006 1 Introduction This document has been produced to illustrate the performance of the integrated synthesisers used in the CMX7031 Two-Way Radio Processor IC.


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    CMX7031 AN/2WR/7031SYNTH/1 CMX7031 100MHz 600MHz cf 455 455 XTAL cf 455 a fm 485 Delta W16 transistor w16 cf-455 PE0201 4C00 PDF

    intel topside mark

    Abstract: TE28F160S5-70 28F160S3 28F160S5 28F320S3 28F320S5 DT28F320S3-110 DT28F320S3-140 DT28F320S5-90 dt28f160s570
    Text: WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F160S5 28F320S3, 28F320S5 SPECIFICATION UPDATE Release Date: November 1998 Order Number: 297849-009 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current


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    28F160S3, 28F160S5 28F320S3, 28F320S5 28F160S5 28F320S5 28F160S5, intel topside mark TE28F160S5-70 28F160S3 28F320S3 DT28F320S3-110 DT28F320S3-140 DT28F320S5-90 dt28f160s570 PDF

    DT28F160S5-70

    Abstract: DT28F320S5-90 TE28F160S5-70 DT28F320S3-110 w16 90 TE28F160S3-100 PBT-GF30 transistor w16 28F160S5 28F320S5
    Text: 3 VOLT AND 5 VOLT FlashFile MEMORY 28F160S3, 28F160S5 28F320S3, 28F320S5 x8/x16 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297849-010 The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current


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    28F160S3, 28F160S5 28F320S3, 28F320S5 x8/x16) 28F160S5 28F320S5 DT28F160S5-70 DT28F320S5-90 TE28F160S5-70 DT28F320S3-110 w16 90 TE28F160S3-100 PBT-GF30 transistor w16 PDF

    TE28F160S5-70

    Abstract: 28F160S5 DT28F160S5-70 DT28F320S5-90 28F160S5-70 te28f160s3-100 w16 90 DT28F160S3-75 28F160S3 28F320S3
    Text: 3 Volt and 5 Volt FlashFile Memory 28F160S3, 28F320S3, 28F160S5, 28F320S5 x8/x16 Specification Update July 1999 Notice: The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors known as errata which may cause the product to deviate from published specifications.


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    28F160S3, 28F320S3, 28F160S5, 28F320S5 x8/x16) 28F160S5 28F320S5 16Mb/32Mb TE28F160S5-70 DT28F160S5-70 DT28F320S5-90 28F160S5-70 te28f160s3-100 w16 90 DT28F160S3-75 28F160S3 28F320S3 PDF

    CY27C256A-45WMB

    Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
    Text: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)


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    CY27C256A 28-pin 32-pin CY27C256A CY27C256A-45WMB w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC PDF

    CY27C256A-45JC

    Abstract: CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC
    Text: fax id: 3026 1CY 27C2 56 A CY27C256A 32K x 8 CMOS EPROM Features • • • • • • windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)


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    CY27C256A 28-pin 32-pin CY27C256A CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC PDF

    Delta W16

    Abstract: 27C128 C128 CY27C128 27C128-45
    Text: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure


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    CY27C128 CY27C128 600mil Delta W16 27C128 C128 27C128-45 PDF

    27C128

    Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
    Text: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.


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    CY27C128 CY27C128 384-word 27C128 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 c1281 PDF

    C5121

    Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
    Text: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention


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    CY27C512 200mA 32-pin 28-pin 28-pin, 600-mil 32-pin, CY27C512 C5121 C5127 C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC PDF

    FV5T-016

    Abstract: 470 pF 400V 470 uf 400V ec jf FVST-064
    Text: _ P R E M O FVST RFI Power Line Filters Three Phase Double Stage ElectricaJ schematics OJyfcjf 6/W16 Amp General Specifications Maximum operating voltage: 520Vac. Operating frequency: D C - 60Hz. Hipot test voltage: L/N->PE: 3000Vdc 2s.


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    520Vac. 3000Vdc FVST-006 47nF/100nF/1 50mm2 FVST-180 M10SCREW FVST-250 100nF/100nF/1nF FV5T-016 470 pF 400V 470 uf 400V ec jf FVST-064 PDF

    Untitled

    Abstract: No abstract text available
    Text: PREM O FVST RFI Power Line Filters Three Phase Double Stage ElectricaJ schematics OJyfcjf 6/W16 Amp o o 2 L2 - < lïïiïïT “S i General Specifications Maximum operating voltage: 520Vac. Operating frequency: D C - 60Hz. Hipot test voltage: L/N->PE: 3000Vdc 2s.


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    6/W16 520Vac. 3000Vdc FVST-006 /-/470/-nF FVST-01610 50mm2 47nF/100nF/1 ROT-180 10SCREW PDF

    27C512

    Abstract: CY27C512 CY27C512-150WC 27C512-70
    Text: ¥ CYPRESS Features • C M O S for optim um speed/pow er • High speed — tAA = 70 n s max. Low power • — 220 m W m ax. — L ess than 85 mW w hen d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the w indow ed package •


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    CY27C512 -32-pin 28-pin 28-pin, 600-mil 32-pin 27C512 CY27C512-150WC 27C512-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS 64K x 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t*A = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


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    32-pin 28-pin, 600-mil CY27C512 CY27C512 28-pin PDF

    27C512-70

    Abstract: 1N3064 27C512 27C512-150 CY27C512 CY27C512-150WC
    Text: ?/ CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


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    CY27C512 -32-pin 28-pin 28-pin, 600-mil 32-pin 27C512-70 1N3064 27C512 27C512-150 CY27C512-150WC PDF

    Untitled

    Abstract: No abstract text available
    Text: à * T7CC1 CY27C512 ADVANCED INFORMATION C Y r n h o o 64K x 8 CMOS EPROM Features Functional D escription • CMOS for optimum speed/power • High speed — Iaa - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization


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    CY27C512 28-pin 28-pin, 600-mil 32-pin CY27C512 PDF

    27C64 8k EPROM

    Abstract: ic 27c64 27c642
    Text: CY27C64 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional Description The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically


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    CY27C64 27C64 8k EPROM ic 27c64 27c642 PDF

    27C64 8k EPROM

    Abstract: eprom 27c64 27C64 27C64-20 7258 P15 Package CY27C64 CY7C266 200JC
    Text: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power


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    CY27C64 CY27C64 600-mil-wide CY27C64â 200JC 32-Lead 200PC 28-Lead 27C64 8k EPROM eprom 27c64 27C64 27C64-20 7258 P15 Package CY7C266 PDF

    27C64-120

    Abstract: 27C64-70 27C64 CY27C64 CY7C266 27C6470 27C61 27C64-90
    Text: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power


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    CY27C64 600-mil-wide 150PC 28-Lead 600-Mil) CY27C64â 150WC 27C64-120 27C64-70 27C64 CY7C266 27C6470 27C61 27C64-90 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514273BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514273BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514273BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques


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    TC514273BJ-70/80 TC514273BJ 6/I016) TDT72M -W16/I016 W1/I01 16/I016 PDF

    64150J

    Abstract: No abstract text available
    Text: CY27C64 ïj CYPRESS 8K x 8 EPROM Features • TTL-corapatible I/O • CMOS for optimum speed/power Functional Description • Windowed for reprogrammability • High speed — 70 ns commercial • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power


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    CY27C64 CY27C64 600-mil-wide 28-Lead 600-Mil) 27C64â 64150J PDF

    Untitled

    Abstract: No abstract text available
    Text: CY27C256A 5 H S F J? p Y P P p c q J,. 1. I ,L,¿ k 3 k.^3 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: 4 5 -200 ns 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention


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    CY27C256A 32-pin 28-pin 28-pin, 600-mil 32-pin, CY27C256A 256-Kbit PDF

    Untitled

    Abstract: No abstract text available
    Text: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance


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    CY27C128 CY27C128 384-word 600-mil cY27C128-200WMB 28-Lead 600-Mil) PDF