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    W02 DIODE Search Results

    W02 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    W02 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N5256AW12

    Abstract: N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260
    Text: Agilent Technologies N5256/7/8A Millimeter-wave Modules User’s Guide Use this manual with the following document: Technical Overview 5989-7620EN Millimeter Modules N5256AW01, W02, W03, W05, W06, W08, W10, W12, W15, W22, X10, X12, N5257AR02, R03, R05, R06, R08, R10, R12, R15, R22


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    PDF N5256/7/8A 5989-7620EN N5256AW01, N5257AR02, N5258AD02, N5256-90001 N5256AW12 N5256AW10 N5260-60003 N5256AW15 N5257AR10 N5260

    W02 transistor

    Abstract: W02 diode EE-SPZ401Y-01 W01 transistor AWG24 EE-2001 EE-SPZ301W-01 EE-SPZ301W-02 W-01 EE-SPZ301Y-01
    Text:  EE-SPZ301/401/W-01/W-02/Y-01 Fiber-Optic Sensing Head Fits Space-Confined Areas  Light modulation effectively reduces external light interference  Built-in amplifier with optical fiber  Easy adjustment and optical axis monitoring with a Light-ON indicator


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    PDF EE-SPZ301/401/W-01/W-02/Y-01 EE-2001 EE-SPZ301W-01 1-800-55-OMRON W02 transistor W02 diode EE-SPZ401Y-01 W01 transistor AWG24 EE-2001 EE-SPZ301W-01 EE-SPZ301W-02 W-01 EE-SPZ301Y-01

    EE-2001

    Abstract: EE-SPZ301W-01 EE-SPZ301W-02 W-01 W02 transistor 01Y01 W01 transistor EE-1002
    Text:  EE-SPZ301/401/W-01/W-02/Y-01 Fiber-Optic Sensing Head Fits Space-Confined Areas  Light modulation effectively reduces external light interference  Built-in amplifier with optical fiber  Easy adjustment and optical axis monitoring with a Light-ON indicator


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    PDF EE-SPZ301/401/W-01/W-02/Y-01 EE-2001 EE-SPZ301W-01 EE-2001 EE-SPZ301W-01 EE-SPZ301W-02 W-01 W02 transistor 01Y01 W01 transistor EE-1002

    W04 bridge rectifier

    Abstract: S1NB60 55 KBPC3510 S1NB60 70 S1NB60 43 w08 bridge rectifier S1ZB60 W005S DI101 DI102
    Text: SEMICONDUCTORS DIODES, Bridge Rectifier A range of surface mount and through hole bridge rectifiers offering current ratings from 0.8 Amp to 35 Amp. 0.8 Amp VRRM V 1N 1Z Supplied taped and reeled. Manufacturer: Shindengen Device & Order Code IFAV (A) at Tamb (°C)


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    PDF S1ZB20 S1ZB60 S1NB60 KBPC3502 KBPC3501 KBPC35005 KBPC2501 KBPC25005 W04 bridge rectifier S1NB60 55 KBPC3510 S1NB60 70 S1NB60 43 w08 bridge rectifier S1ZB60 W005S DI101 DI102

    Untitled

    Abstract: No abstract text available
    Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current


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    PDF UL94V-O MIL-STD-202,

    DIODE w04

    Abstract: W005
    Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current


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    PDF UL94V-O MIL-STD-202, DIODE w04 W005

    DIODE w04

    Abstract: W005 W02 diode
    Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF UL94V-O MIL-STD-202, DIODE w04 W005 W02 diode

    Bridge Rectifiers

    Abstract: transistor w04 W08 transistor DIODE w04 transistor w10 transistor w02 w08 bridge rectifier W005
    Text: W005 - W10 SILICON BRIDGE RECTIFIERS WOB PRV : 50 - 1000 Volts Io : 1.5 Ampere 0.39 10.0 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF UL94V-O MIL-STD-202, Bridge Rectifiers transistor w04 W08 transistor DIODE w04 transistor w10 transistor w02 w08 bridge rectifier W005

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com W005 - W10 SILICON BRIDGE RECTIFIERS


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    RAST-5-Standard

    Abstract: ei CM48 Lumberg connector lc4 CZK48 W02 diode Lumberg connector 2A SolarEdge Technologies
    Text: closer LC3 LC4® contacts Verbindungslösungen für Photovoltaik-Systeme Standardprodukte und kundenspezifische Lösungen für • Modulhersteller • Komponentenhersteller • Installateure und Systemintegratoren System LC3® • • • besonders schlank


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    solar inverters schematic diagram

    Abstract: ako 544 235 WIRING diagram USB to rca CABLE schematic diagram solar inverter Lumberg connector 2A cables Lumberg connector lc4 photovoltaic module solar inverter circuit solar pv inverter schematic
    Text: closer LC3 LC4® contacts Connectivity Solutions for Photovoltaic Power Systems Standard Product Range and Customized Solutions for • Module Producers • Component Producers • Installers and System Integrators Systems LC3® • • • sleek and slim


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    6a3 zener

    Abstract: DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323
    Text: JINAN JINGHENG CO., LTD. MAIN PRODUCT CONTENT 1. SCHOTTKY BARRIER RECTIFIERS Type Number Forward Current Amps Reverse Voltage Range(Volts) Case SR0620-SR06A0 0.6 20-100 DO-41 1N17-1N19 1 20-40 R-1 1N5817-1N5819 1 20-40 DO-41 1S20-1S200 1 20-200 R-1 SR120-SR1200


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    PDF SR0620-SR06A0 DO-41 1N17-1N19 1N5817-1N5819 1S20-1S200 SR120-SR1200 SM120-SM1A0 DO-213AA) 6a3 zener DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323

    Untitled

    Abstract: No abstract text available
    Text: BRIDGE RECTIFIERS PLASTIC MATERIAL U SED C A R R IE S UL 94V-0 OPERATING T EM PERA TU RE RANGE : -55 "C to +125 °C STO RAGE T EM PER A T U R E RANGE : -55'C tO+150“C TYPE Maximum Peak Reverse Voltage 1.5 AMPERES/RC-2 CASE 20 W005L W01 L W02 L W04 L W06 L


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    PDF W005L DO-201 DO-41

    W01 transistor

    Abstract: W02 transistor transistor w02 EE-SPZ301W-01
    Text: omRon EE-SPZ301 /SPZ401 /W-01 /W-02/Y-01 Fiber-Optic Sensing Head Fits Space-Confined Areas • Light modulation effectively reduces external light interference ■ Built-in amplifier with optical fiber ■ Easy adjustment and optical axis monitoring with a LIGHT-ON indicator


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    PDF EE-SPZ301 /SPZ401 /W-01 /W-02/Y-01 EE-2001 EE-SPZ401 W01 transistor W02 transistor transistor w02 EE-SPZ301W-01

    toko 93281

    Abstract: DP8530 pierce oscillator opamp
    Text: DP8530 National Semiconductor PRELIMINARY DP8530 Clock Generator General Description Features The DP8530 is a clock generator intended for use in medium-performance CRT graphics systems. The device gener­ ates both ECL and TTL pixel and load clocks from a single


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    PDF DP8530 DP8530 toko 93281 pierce oscillator opamp

    PBP205

    Abstract: GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810
    Text: BRIDGE CROSS REFERENCE GEN. INST. DIODES INC LITE ON RECTRON DB101GM DB102GM DB103GM DB104GM DB105GM DB106GM DB107GM DF005S DF01S DF02S DF04S DF06S DF08S DF01S SDF005 SDF01 SDF02 SDF04 SDF06 SDF08 SDF10 PBDF101S PBDF102S PBDF103S PBDF104S PBDF105S PBDF106S


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    PDF DF005S DF01S DF02S DF04S DF06S DF08S DF005M DF01M DF02M PBP205 GBPC602 GBPC802 W04 SMD KBP153 MB-104 RD154 PBP152 DB-102M GBPC810

    KBL06 AC

    Abstract: KBP12 KBPC806G KBL005G kbl06g
    Text: V V- V ¡s 5 ¡v v \ - \-é>^ •A\ V ' WAFAD001 “» «j ''"tu«: t / -, /7 E 1 27862 ;.? M V GLASS PASSIVATED BRIDGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE TYPE Maximum Forward Voltage @ 2 5 t Ta Maximum Peak Reverse Voltage Maximum Average Rectified Current


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    PDF WAFAD001 -55fc AMPERE/WOM/RB-15 W005G 2W005G AMPERE/MB-35 KBL06 AC KBP12 KBPC806G KBL005G kbl06g

    J106L

    Abstract: No abstract text available
    Text: TOSHIBA MIG20J106L TOSHIBA INTELLIGENT GTR MODULE MIG20J106L HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The Electrodes are Isolated from Case • Three Phase IGBT Inverter Output • Gate Drive Circuit • Protection Logic Over Current Over Temperature


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    PDF MIG20J106L 961001EAA2 J106L

    Untitled

    Abstract: No abstract text available
    Text: BRIDGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING TEMPERATURE RANGE : -55 °C to +125 "C STORAGE TEMPERATURE RANGE : -55 °C to+150°C Maximum Maximum Reverse Forward Peak Current Surge Current @ PR V @ 8.3ms @25 °C T a Superim posed lFM Surge


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    PDF RS101 RS102 RS103 RS104 RS105 RS106 RS107 DO-201 DO-41 0Q007L

    IN5822 diode

    Abstract: diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303
    Text: R F ELECTRONICS INC tè i 7 4 ^ 3 1 ^ DDOGODa Ö EME D T -//- o f P Ö ^ e M H IG H V O LTA G IS ZEPJE& _' V-• . , '•i'x'-'-'. á?^ityatf-».'> a !>i‘~ .^ V ¿V ,~-“ r¿ l*»irif»ii<-'i«t-‘ - SILICON RECTIFIERS Fof Glass Passivated add " G ” to Part No.


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    PDF 1N4001/G 1N4002/G 1N4003/G 1N4004/G 1N4005/G 1N4006/G 1N4007/G DO-41 1N5391/G 1N5392/G IN5822 diode diode IN5822 6A60 diode 6A100 diode IN5822 IN5820 Zener 6A10 DIODE ct 58340 diode ct 2A05 diode zener fr303

    SOT-23 w02

    Abstract: W02 SOT23 W02 sot 23 W02 sot-23 W02 sot t 5.5 w
    Text: April 1999 PAIRÇHILD S E M IC O N D U C T O R tm FDN359AN N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored


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    PDF FDN359AN OT-23 SOT-23 w02 W02 SOT23 W02 sot 23 W02 sot-23 W02 sot t 5.5 w

    AB29 DIODE

    Abstract: No abstract text available
    Text: Electrical Characteristics 12.1 Signal Specifications 12.1.1 Unused Pins 12 For reliable operation, always connect unused inputs to an appropriate signal level. Unused AGTL+ inputs should be connected to VTT. Unused active low 3.3V-tolerant inputs should be


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    PDF 10Ki2 450NX AB29 DIODE

    Untitled

    Abstract: No abstract text available
    Text: I N T E G R A T E D DE V I C E 3ÖE D • 4Ö2S771 0GGSS17 1 B I D T T - - 5 Z - 3,1 Integrated Device Technology, Inc. IDT29FCT52AT/BT/CT IDT29FCT53AT/BT/CT FAST CMOS OCTAL REGISTERED TRANSCEIVERS FEATURES: DESCRIPTION: • Equivalent to A M D ’s Am2952/53 and Fairchild’s 29F52/


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    PDF 2S771 0GGSS17 IDT29FCT52AT/BT/CT IDT29FCT53AT/BT/CT IDT29FCT53AT/BT/CT. IDT29FCT53AT/BT/CT DGS223 IDT29FCT

    Untitled

    Abstract: No abstract text available
    Text: Electrical Characteristics 12.1 Signal Specifications 12.1.1 Unused Pins 12 For reliable operation, always connect unused inputs to an appropriate signal level. Unused A G TL+ inputs should be connected to V 7 7 . Unused active low 3.3 V-tolerant inputs should be


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    PDF