VU MARKING CODE Search Results

MTI120WX55GD

Abstract: s4 35 diode marking code
Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

MTI90WX75GD

Abstract: DIODE marking VU smd diode code g6 vu marking code SMD MARKING DIODE VU
Contextual Info: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Contextual Info: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications

DIODE CODE VU

Contextual Info: SIEMENS Silicon Switching Diode BAL 99 • For high-speed switching Type Marking Ordering Code tape and reel B A L 99 JFs Q62702-A687 Pin Configuration Package1) SOT-23 «-N - 0 3 2 CHMW 0 2 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

lm3916

Contextual Info: LM3916 www.ti.com SNVS762B – JANUARY 2000 – REVISED MARCH 2013 LM3916 Dot/Bar Display Driver Check for Samples: LM3916 FEATURES DESCRIPTION • • • The LM3916 is a monolithic integrated circuit that senses analog voltage levels and drives ten LEDs,

187-71-00

Abstract: 1567060000 50.15031 SL5.08 1510960000 1519960000 connector SL5.08 pa 66 gf Weidmuller BLZ 5.08 1780600000
Contextual Info: Omnimate Range pitch 5.00 / 5.08 Contents Omnimate Range pitch 5.00 / 5.08 Omnimate Range pitch 5.00 / 5.08 Male connectors with THR solder connection F.2 Male connectors with solder connection F.32 Male connectors with spade/solder connection F.44 Male connectors with clamping yoke connection

CRH01

Abstract: CRS03 TPD7201F
Contextual Info: TO SH IBA TENTATIVE TPD7201F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD7201F POWER MOSFET GATE DRIVER FOR 3-PHASE DC MOTOR TPD7201F is a power MOSFET Gate Driver for 3-Phase fullbridge circuit using charge pump system. Because this IC

A74 marking

Abstract: a74 marking code DFN10 TS4974 TS4974IQT A74 marking amplifier
Contextual Info: TS4974 1W Differential Audio Power Amplifier with Up/Down Digital Volume Control Pins PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Operating from VCC = 2.5V to 5.5V Zero pop&clickless circuit 1.W output power @ Vcc=5V, THD=1%, F=1kHz, with 8Ω Load

CRH01

Abstract: CRS03 TPD7203F toshiba tpd7203f
Contextual Info: TO SH IBA TENTATIVE TPD7203F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD7203F POWER MOSFET GATE DRIVER FOR 3-PHASE DC MOTOR TPD7203F is a power MOSFET Gate Driver for 3-Phase full bridge circuit using charge pump system. Because this 1C

1635930000

Abstract: 1539860000 178570000 1596420000 1768990000 GSF5/8/180 0409360000 din iec 326 LM2H fuse 1769500000
Contextual Info: Printed Circuit Board Terminals Printed Circuit Board Terminals Weidmüller’s ever expanding range of printed circuit board terminals have been designed to cater for the many varied application requirements faced by todays Design Engineers. Product features overview:

C 5388

Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Contextual Info: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class

ARM pin configuration

Abstract: toshiba motor HIGH POWER MOSFET TOSHIBA high side MOSFET driver with charge pump "Power MOSFET" DIODE marking VU pin diagram of MOSFET Power MOSFET, toshiba MAKING WU MOSFET DRIVER LOW SIDE IC high side mosfet
Contextual Info: TPD7203F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7203F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7203F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge

CRH01

Abstract: TPD7203F "Intelligent Power Device"
Contextual Info: TPD7203F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7203F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7203F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge

CRH01

Abstract: TPD7203F
Contextual Info: TPD7203F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7203F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7203F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge

marking VU SOT363

Abstract: 74LVC1G11 74LVC1G11GF 74LVC1G11GM 74LVC1G11GV 74LVC1G11GW vu marking code sot363
Contextual Info: 74LVC1G11 Single 3-input AND gate Rev. 5 — 30 July 2010 Product data sheet 1. General description The 74LVC1G11 provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

marking VU SOT363

Contextual Info: 74LVC1G11 Single 3-input AND gate Rev. 7 — 4 July 2012 Product data sheet 1. General description The 74LVC1G11 provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

Contextual Info: 74LVC1G11 Single 3-input AND gate Rev. 6 — 9 December 2011 Product data sheet 1. General description The 74LVC1G11 provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment.

TPD7210F

Abstract: tpd7210
Contextual Info: TPD7210F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7210F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7210F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge

qml38535

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 00-09-28 R. MONNIN Drawing updated to reflect current requirements. - ro REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY MARICA B. KELLEHER

"Voltage Controlled Oscillators"

Abstract: T6020
Contextual Info: SURFACE MOUNT T6020, T6021 VOLTAGE CONTROLLED OSCILLATORS HCMOS, -40° to +85°C Surface Mount, 5V Extended Temp Surface Mount VCXOs, 5V 3 MHz to 45 MHz Industrial temperature -40°C to 85°C thru-hole VCXOs are available in a variety of off-the-shelf models. These

Contextual Info: TPD7210F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7210F Power MOSFET Gate Driver for 3-Phase DC Motor The TPD7210F is a power MOSFET gate driver for 3-phase full-bridge circuits that use a charge pump system. The inclusion of a charge

POWER SUPPLY BTS SIEMENS

Abstract: siemens pwm 12v E3230 application note BTS
Contextual Info: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection

connector SL5.08

Abstract: BLZ5.08 BLZ-5.08 sl5.08 connector SL5
Contextual Info: Derating curve Male connector with 90° outlet direction. Available with open or closed sides. Fixing blocks can be attached to the closed version. The solder pin length has been optimised for wave soldering applications. The male connectors provide space for labelling and can be coded. Packed in cardboard

marking code f 25 x

Contextual Info: R E C E IV E D FE8 1 2003 r’ Lu J. DOCUMENT CONTROL . . .R A S I O N S . . DESCRIPTION DATE LETTER NO O VU INITIAL RELEASE. — OS NOTES: 1. DISSIPATION FACTOR: .0 0 5 MAX <§> 25* C, 1 kHZ.