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    Excelitas Technologies Corporation VTP1012H

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:To-46; Wavelength Of Peak Sensitivity:925Nm; Angle Of Half Sensitivity ±:35°; Dark Current:7000Pa; Operating Temperature Min:-40°C; Operating Temperature Max:110°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTP1012H
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    Newark VTP1012H Bulk 250
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    • 1000 $5.23
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    RS VTP1012H Bulk 1
    • 1 $7.39
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    • 100 $7.39
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    Ozdisan Elektronik VTP1012H
    • 1 $8.95312
    • 10 $8.95312
    • 100 $8.1392
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    • 10000 $8.1392
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    VTP1012 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTP1012 PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP1012 EG&G FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes Scan PDF
    VTP1012 EG&G Vactec VTP Process Photodiodes Scan PDF
    VTP1012 EG&G Vactec VTP Process Photodiodes Scan PDF

    VTP1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTP1012

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1012 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to


    Original     		PDF VTP1012 VTP1012

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1012H PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to


    Original     		PDF VTP1012H

    VTP1012H

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1012H PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to


    Original     		PDF VTP1012H VTP1012H

    1150 5

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP1012 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to


    Original     		PDF VTP1012 1150 5

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original     		PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    VTP1012

    Abstract: No abstract text available
    Text: VTP Process Photodiodes ,r r VTP1012 PACKAGE DIMENSIONS inch mm> CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cath­ ode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.


    OCR Scan     		PDF VTP1012 IO-14 VTP1012

    VTP1013

    Abstract: VTP1012
    Text: 5bE D • BDBDbD^ □□OlQbb TbS H V C T VTP Process Photodiodes E 6 8, G VTP1012, 1013 VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm CASE 17 TO-46 HERME11C CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in


    OCR Scan     		PDF VTP1012, T-41-51 HERME11C x1012 VTP1013 VTP1012

    VTP1012

    Abstract: VTP1013
    Text: BDBDbD^ GGDlObb Tb5 H V C T 5b E D VTP Process Photodiodes VTP10 12 , 1013 E 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .1 5 4 ( 3 . 9 1 ) 1 .0 0 ( 2 5 . 4 ) CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a "flat" window TO-46 package. Cathode


    OCR Scan     		PDF VTP1012, T-41-51 VTP1012 VTP1013 x1012 VTP1012 VTP1013

    Untitled

    Abstract: No abstract text available
    Text: V TP 1 0 1 2 VTP Process Photodiodes CASE 17 PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cath­ ode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.


    OCR Scan     		PDF VTP1012 3030bCH

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B