VS12G476 Search Results

Contextual Info: VS12G476 Registered I/O, Self-Timed, 1Kx 4 Static RAM Features • 1024 by 4-bit static RAM for cache or control store applications • Very fast Read/Write cycle time 2.5 ns • Single power supply 2 Volts • Completely static operation • Very low sensitivity to total

Contextual Info: VI T E SS E S E M I C O N D U C T O R 30E D TSGE331 D0ÜG35G 7 VS12G476 w Registered I/O, Self-Timed, 1Kx 4 Static RAM IS> o -j o> Features • 1024 by 4-bit static RAM for cache or control store applications »Very fast Read/Write cycle tim e >Single power supply 2 Volts

Contextual Info: PRELIMINARY VS12G476 VITESSE 2.5 ns, Registered I/O, Self-Timed 1 K x 4 Static RAM ; SEMICONDUCTOR c o r p o r a t io n Features • 1024 x 4-Bit Static RAM for Cache or Control Store Applications • Very Fast Read/Write Cycle Time . • 'Native' GaAs Compatible Inputs and Outputs for

Contextual Info: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops

G52020-0

Abstract: VSC10000
Contextual Info: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)