VS BI 187 Search Results

vlt 2900

Contextual Info: TECHNICAL INFORMATION SOFTWARE FOR CALCULATING POWER CAPABILITY FOR MLC CERAMIC CAPACITORS by John D. Prymak Olean Advanced Products Division AVX Corporation Abstract: The power capability of the ceramic MLC capacitor is a rather complex association of design, material, ambient temperature,

Delta dps 240 fp

Abstract: bosch lsh 24 bosch lsh 25 radix-2 dit fft flow chart VOGT n7 bosch lsh 6 radix-4 DIT FFT C code vogt p4 vogt N8 ga15 engine
Contextual Info: Parallel Processing With the TMS320C4x Application Guide 1994 Digital Signal Processing Products Printed in U.S.A., February 1994 SPRA031 Application Guide Parallel Processing With the TMS320C4x 1994 Parallel Processing With the TMS320C4x Application Guide

VC04LC18V500

Abstract: VC06LC18X500 VC08LC18A500
Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

Delta dps 240 fp

Abstract: R4000 T805 T9000 TMS320 TMS320C40 motorola analog ICs vol.1 bosch lsh 25 MOTOROLA Semiconductor Data Library Volume 3 1974 50MFlops
Contextual Info: Parallel Processing With the TMS320C4x Application Guide SPRA031 February 1994 Printed on Recycled Paper Part 1 Introduction to Parallel Processing Part 2 Hardware Applications Part 3 Software Algorithms Part 4 End Applications IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products

bosch lsh 25

Abstract: bosch lsh 24 vogt N8 bosch lsh 6 VOGT N6 VOGT n7 VOGT P4 vogt P5 VOGT p9 vogt m3
Contextual Info: Parallel Processing With the TMS320C4x Application Guide SPRA031 February 1994 Printed on Recycled Paper Part 1 Introduction to Parallel Processing Part 2 Hardware Applications Part 3 Software Algorithms Part 4 End Applications IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products

bosch lsh 25

Abstract: bosch lsh 24 vogt N8 VOGT n7 VOGT p8 VMEbus interface handbook vogt m3 VOGT n3 Cypress VMEbus Interface Handbook VOGT N6
Contextual Info: Parallel Processing With the TMS320C4x Application Guide 1994 Digital Signal Processing Products Printed in U.S.A., February 1994 SPRA031 Parallel Processing With the TMS320C4x 1994 Application Guide Parallel Processing With the TMS320C4x Application Guide

MC1A01

Abstract: bridge rectifier j7 A190 A19013AH1AD1 A19015AH1AD1 A7012AH1AD1 A7014AH1AD1
Contextual Info: Silicon A70, A190 Rectifier Stacks FIN 13 FIN 14/15 643 A70, A190 1. R E C T I F I E R S T A C K S E L E C T IO N C H A R T fo r 40 C am bient, free convection cooling, resistive or inductive load for other conditions — see Figures 2 thru 7 . S IN G L E P H A SE H A L F W A V E

VC06LC18X500

Abstract: VC04LC18V500 VC08LC18A500
Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

VC04LC18V500

Abstract: VC06LC18X500 VC08LC18A500
Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

Contextual Info: StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION • Typical ESD failure voltage for CMOS and/or Bi Polar is ≥ 200V. • Low capacitance <200pF is required for high-speed

"Q-bit Corporation"

Abstract: H-8702
Contextual Info: Q BH -8702 Amplifier P erform ance Specifications Specifications T ypi ca l +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

8706

Abstract: bh8706
Contextual Info: Q BH-8706 Amplifier P erform ance Specifications T ypi ca l +25 °C Specifications Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

5KE12A

Abstract: 5KE440CA
Contextual Info: 1.5KE6.8 -1.5KE440CA series 1.5KE6.8 - 1.5KE440CA 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS Ø1.016±0.050 Protect sensitive electronics against voltage transients induced by electro-static discharge ESD , inductive load switching, and lightning. Ideal for the protection of

Contextual Info: Q B S -2 56 Amplifier P e rfo rm a n c e Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

diode 2000V EV2

Abstract: A35 diode bridge rectifier j7 peak 7x7x1.4 specs MC1A01 12 volt ac to dc bridge rectifier circuit A7012AH1AD1 A7014AH1AD1 ADC-318 A19013AH1AD1
Contextual Info: Medium & High Current Rectifier Modules A2011BC1AD1 i s a 200V, s in g le phase c e n te r ta p , using A20 c e l l s on type 11 F in s , capable o f conducting 6 .3 A a v e .p e r c e ll a t 1800 C conduction an gle in fre e a i r o r 9.8A per c e ll in 2000 lin e a r f e e t per minute fo rc e d a i r .

15KE diode

Abstract: diode 1.5ke 100a
Contextual Info: Silicon Avalanche Diodes 1500 Watt Axial Transient Voltage Suppressors 1.5KE Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and other integrated circuits used in

P6KE30A diode

Abstract: p6ke220ca P6KE36A diode E128 diode P6KE P6KE440C vs bi 187 P6KE10A P6KE11 P6KE12
Contextual Info: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.

1.5KE33C DIODE

Abstract: vs bi 187 5KE12A 1.5ke series
Contextual Info: Silicon Avalanche Diodes 1500 Watt Axial Transient Voltage Suppressors 1.5KE Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus, and other integrated circuits used in

Contextual Info: Silicon Avalanche Diodes 600 Watt Axial Transient Voltage Suppressors P6KE Series Protect sensitive electronics against voltage transients induced by 6 inductive load switching and lightning. Ideal for the protection SILICON DIODE ARRAYS of I/O interfaces, Vcc bus, and other integrated circuits.

1.5SE18A

Abstract: 1.5SE200 1N5906 1.5SE39A 1.5SE36A 1N6201A 1.5SE16A 1.5SE15A 1.5SE200A 1.5SE160
Contextual Info: 1500 WATT TRANSIENT VOLTAGE 1.5 SE-SERIES SUPPRESSOR DIODES 5V to 342V VR _ C-4 CASE _ DESCRIPTION FEATURES: . a low cost commercial product lor use in applica­ tions where large voltage transients can permanently

AE 2576

Abstract: TMS320TCI648x 3GPP turbo decoder log-map C6416 0x00050005
Contextual Info: Application Report SPRAAG3 – December 2006 TMS320TCI648x TCP2 Channel Density Brighton Feng . ABSTRACT Turbo decoder lies at the heart of all of the third-generation 3G wireless standards.

1.5SE250

Abstract: 1.5se20a 1.5SE6.8 1.5SE400A
Contextual Info: 1500 WATT TRANSIENT VOLTAGE 1.5 SE -SE R IE S SU P P R ESSO R DIODES 5V to 342V VR _ C -4 C A S E _ FEATURES: D ESC R IP T IO N . a low cost commercial product for use in applica­ tions where large voltage transients can permanently

IPC-2221A

Abstract: 12b3 diode IPC-2152 vsc8244hg TP168 3b6 it manufacture smd 1a5 smd 9A5 TP-114 nc02
Contextual Info: Freescale Semiconductor Application Note AN3444 Rev. 0, 10/2007 A Strategy for Routing the MPC8536E in a Six-Layer PCB by Michael George DSD Applications Freescale Semiconductor, Inc. Austin, Texas This application note is a design guide to assist the customer