vs 1838 b
Abstract: No abstract text available
Text: Application Note 1838 Authors: Kiran Bernard, Eric Thomson, Lawrence Pearce, Nick Vanvonno Single Event Effects Testing of the ISL70444SEH, Quad 40V Radiation Hard Precision Operational Amplifiers Introduction SEE Results Objective There are many phenomena that occur past Earth's
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ISL70444SEH,
AN1838
ISL70444SEHEVAL1Z
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ADF4153
Abstract: KJ1367 TB-552 9434 8 pin integrated circuit
Text: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932
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SSN-1932A-119+
KJ1367
ADF4153
KJ1367
TB-552
9434 8 pin integrated circuit
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n 9013
Abstract: ADF4153 KJ1367 TB-552 9434 8 pin integrated circuit
Text: Frequency Synthesizer 50Ω SSN-1932A-119+ 1832 to 1932 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Very small size 0.60" x 0.60" x 0.138" CASE STYLE: KJ1367 Product Overview The SSN-1932A-119+ is a Frequency Synthesizer, designed to operate from 1832 to 1932
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SSN-1932A-119+
KJ1367
n 9013
ADF4153
KJ1367
TB-552
9434 8 pin integrated circuit
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2160 transistor
Abstract: TK11893 1512 regulator
Text: POWER&RF Bipolar white LED flash driver IC バイポーラ白色LEDフラッシュドライバIC TK11893AM8 HSON3030B-10 DESCRIPTION The TK11893AM8 type is a step-up DC-DC converter designed for camera lights of mobile phones and portable equipment, using constant frequency PWM architecture, with
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TK11893AM8
HSON3030B-10)
TK11893AM8
DE2812C
500mA)
2160 transistor
TK11893
1512 regulator
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HFA16PB120
Abstract: IRFP250 HFA16PB120PBF transistor IRFP250
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
O-247AC
IRFP250
HFA16PB120PBF
transistor IRFP250
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IR 1838 T
Abstract: IR 1838 IR 1838 3v HFA16TB120 IRFP250
Text: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI
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HFA16TB120
260nC
HFA16TB120
O-220AC
IR 1838 T
IR 1838
IR 1838 3v
IRFP250
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9936 transistor
Abstract: IR 1838 T IR 1838 3v diode 838 HFA16TB120 IRFP250 IR 1838
Text: Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits
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HFA16TB120
260nC
HFA16TB120
9936 transistor
IR 1838 T
IR 1838 3v
diode 838
IRFP250
IR 1838
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CHB75-12S24
Abstract: 12s24 chb75-48s12 CHB75-48S24 CHB75-24S12
Text: E R I E S Specifications CHB75 37.5 TO 75 WATT WIDE INPUT DC-DC CONVERTERS SINGLE OUTPUT Features 37.5W-75W Isolated Output Efficiency to 85% 300KHz Switching Frequency 2 : 1 Input Range • • • • GENERAL SPECIFICATIONS: Input Voltage Range. 12V.9-18V
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CHB75
W-75W
300KHz
1500VDC
400KHz
48Vin.
CHB75-12S24
12s24
chb75-48s12
CHB75-48S24
CHB75-24S12
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IR 1838 T
Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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HFA16PB120
260nC
HFA16PB120
IR 1838 T
IR 1838
IR 1838 3v
IRFP250
vs 1838 b
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IR 1838
Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
HFA06TB120
IR 1838
IRFP250 datasheet
B120
HFA06TB120
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95687 HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A
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HFA32PA120CPbF
260nC
HFA32PA120C
O-247AC
O-247AC
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI
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HFA16TB120
260nC
HFA16TB120
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: 200 -1200 MHz Standard Hybrid Amplifier Frequency range Gain vs. temperature W ide bandw idth dB +0.8/-1.4 dB Max Gain flatness 1.0 1.5 dB M ax p-p Reverse isolation 23 22 dB Min Input 2.0:1 2.0:1 Max Output 1.5:1 1.5:1 Max +8 + 7 dBm Min 3rd O rd e r +21
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H91-0254
744T331
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Untitled
Abstract: No abstract text available
Text: 5 - 1 0 0 MHz Standard Hybrid Amplifier Specification limit Parameters 5- 10 0 M H z bandwidth Temperature Very low noise figure Small signal gain +25 Frequency range Units °c -55 to +85 MHz 5 -1 0 0 16.5 ± 0.5 Gain vs. temperature High reverse isolation
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QBH-217
H91-02
744T331
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Untitled
Abstract: No abstract text available
Text: ^ " \Q M 1 0 - 4 5 0 MHz Standard Hybrid Amplifier Parameters . 1 0 -4 5 0 M H z bandwidth Specification limit Temperature +25 Frequency range dB + 1.2/-1.0 dB M ax 1.4 dB M ax p-p Gain flatness 0.8 Reverse isolation 25 dB Min Input 1.5:1 Max Output 1.5:1
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H91-020&
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Untitled
Abstract: No abstract text available
Text: I rtQZ D tl'^ O O 10 - 200 MHz Standard Hybrid Amplifier . Parameters 1 0 -2 0 0 M H z bandwidth r \m Specification limit +25 Temperature Frequency range Units -55 to +85 °c 10- 200 MHz 20.0 ± 0.5 Small signal gain dB +0.5/-1.0 dB Max • Low noise figure
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vs 1838 b
Abstract: No abstract text available
Text: 5 - 300 MHz Standard Hybrid Amplifier Parameters • 5 -300 M H z bandwidth QBH-223 Specification limit +25 Temperature MHz 11.5 ± 0.5 Small signal gain dB Gain vs. temperature • Guaranteed specifications over temperature • °c 5 -3 0 0 Frequency range
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QBH-223
H91-0223
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"Q-bit Corporation"
Abstract: No abstract text available
Text: /^ D U 1 0 -5 0 0 MHz Sta n d a rd Hybrid Am plifier Parameters 10-500 M H z bandwidth Specification limit Temperature +25 °c lO - 500 Small signal gain MHz l l .0 ± 0.5 dB Gain vs. temperature +0.6/-1.0 dB M ax 0.8 1.0 dB M ax p-p 13 12 dB Min Input 1.6:1
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H91-0335
"Q-bit Corporation"
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1143R
Abstract: No abstract text available
Text: Afa M a n A M P c< o m p a n y Digitai Attenuator, 31 dB, 5-Bit, TTL Driver DC - 2 GHz AT20-0263 Features • CR-12 0.350 {8.89 - ORIENTATION MARK PIN 2 v A tten u atio n : 1-dB S teps to 31 tiB- J • T e m p e ra tu re Stability: ± 0.18 dB from -40°C
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AT20-0263
CR-12
AT20-0263
1143R
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Untitled
Abstract: No abstract text available
Text: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses
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IRGPH50KD2
-10ps
O-247AC
S5452
C-1036
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TRANSISTOR C483
Abstract: IRGPH50MD2
Text: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses
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IRGPH50MD2
10kHz)
O-247AC
5SM52
C-488
TRANSISTOR C483
IRGPH50MD2
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transistor c295
Abstract: No abstract text available
Text: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGPH50FD2
10kHz)
O-247AC
transistor c295
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IR 1838
Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH50KD2
-10ps
O-247AC
C-1036
IR 1838
IRGPH50KD2
c1034
CEE 16a
CEE 32A
1838 ir
C1029
C-1032
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ha 1758
Abstract: No abstract text available
Text: EPSON PF779-01 SEDI 748 Series D o t M a tr ix H ig h D u ty L C D D r iv e r • 160 Output Driver • Logic System Power 2.7 to 5.5V • Slim TCP • DESCRIPTION The SED1748 is a 160-output segment column driver most applicable to drive the extra large-capacity color STN
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PF779-01
SED1748
160-output
SED1743.
SED1748
ha 1758
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