VQE 23 E
Abstract: VQE 23 F vqe 23 c VQE 23 D VQE 23 VQE 12
Text: euoec F BSM 50 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 50 GAL 120 DN2 VCE h 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
Nov-24-1997
VQE 23 E
VQE 23 F
vqe 23 c
VQE 23 D
VQE 23
VQE 12
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VQE 23 E
Abstract: VQE 22 e
Text: euoec F BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 120 DN2 1200V 78A lC Package Ordering Code HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter
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C67076-A2105-A70
Oct-21-1997
VQE 23 E
VQE 22 e
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igbt module bsm 200 gb 120 dl
Abstract: No abstract text available
Text: euoec BSM 50 GB 120 DL F IGBT Power Module Prelim inary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GB 120 DL 1200V 90A Package h O rdering Code HALF BRIDGE 1 Maxim um Ratings
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0ct-30-1997
igbt module bsm 200 gb 120 dl
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vqe 24 e
Abstract: vqe 24 d
Text: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70
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Oct-23-1997
vqe 24 e
vqe 24 d
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vqe 24 d
Abstract: No abstract text available
Text: euoec F BSM 50 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 50 GD 60 DL
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Oct-23-1997
vqe 24 d
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PDF
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE BSM 50 GD 120 DN2G 1200V 78A lC Package Ordering Code ECONOPACK 3 C67070-A2521-A67
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C67070-A2521-A.
0ct-20-1997
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PDF
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VQE 11
Abstract: No abstract text available
Text: euoec BSM 75 GB 170 DN2 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • on,min = ^2 Ohm Type VbE Package O rdering Code BSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C 67070-A2702-A67
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Oct-27-1997
VQE 11
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 50 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings
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C67076-A251=
0ct-20-1997
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PDF
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 50 GD 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 50 GD 120 DL Ordering Code Package VbE
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0ct-30-1997
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PDF
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Eupec BSM
Abstract: BSM50GP60 eupec
Text: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM50GP60
50GP60
Eupec BSM
BSM50GP60
eupec
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vqe 21 d
Abstract: vqe 21 f igbt module bsm 300
Text: euoec BSM 300 GA 170 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on,m in = 5-6 Ohm Package Ordering Code BSM 300 GA 170 DN2 VCE 1700V 440A SINGLE SWITCH 1 C67070-A2706-A67
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C67070-A2706-A67
C67070-A2708-A67
Oct-27-1997
vqe 21 d
vqe 21 f
igbt module bsm 300
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igbt BSM 300 GA 120
Abstract: vqe 14 d VQE 23 E
Text: euoec BSM 300 GA 120 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 300 GA 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S
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C67076-A2007-A70
C67070-A2017-A70
Oct-27-1997
igbt BSM 300 GA 120
vqe 14 d
VQE 23 E
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C1645
Abstract: No abstract text available
Text: euoec BSM300GA120DN2E3166 F IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type VbE Package Ordering Code BSM300GA120DN2E3166 1200V 430A SINGLE SWITCH 1
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BSM300GA120DN2E3166
BSM300GA120DN2E3166
Oct-27-1997
BSM300GA120DN2E31
C1645
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Untitled
Abstract: No abstract text available
Text: euoec BSM150 GT 120 DN2 F IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 150 GT 120 DN2 1200V 200A h Package Ordering Code TRIPACK C67070-A2518-A67
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BSM150
C67070-A0
Nov-24-1997
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switching TRANSISTOR mosfet 30V 40A
Abstract: IRGB440U
Text: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e
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IRGB440U
O-220AB
O-220
switching TRANSISTOR mosfet 30V 40A
IRGB440U
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307d
Abstract: vqe 14 E P 307 diode 307d
Text: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code
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O-218
Q67040-A4221-A2
Dec-02-1996
307d
vqe 14 E
P 307
diode 307d
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transistor c655
Abstract: No abstract text available
Text: PD - 9.681 A bitemational EggRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC20U
O-220AB
O-22QAB
transistor c655
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VQE 22
Abstract: transistor 2146 LE17 SML30G100BN
Text: _ SENELAB PLC bOE ]> • 0133187 □□OObflO TTfl ■ S M L B = rr= MOS POWER “ lili” IGBT SEME LAB AT /// SML30G100BN 1000V 4 30A N -CH A N NEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter SML30G100BN
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T-39-M
SML30G100BN
MIL-STD-750
O-247AD
VQE 22
transistor 2146
LE17
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BUP60
Abstract: No abstract text available
Text: SIEMENS BUP604 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 604 VCE 600V C Pin 3 E Ic Package Ordering Code 80A TO-218AB Q67040-A4231-A2 Maximum Ratings
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BUP604
O-218AB
Q67040-A4231-A2
235bD5
BUP60
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 E C Type VC E !c Package Ordering Code BUP 602D
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O-218
67040-A4229-A2
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A4200
Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
Text: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2
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O-218
Q67078-A4200-A2
6E35b05
S235b05
D0flS031
A4200
bup304
PS 307 5A
65027
C3523
BUP 307
Q67078-A4200-A2
BUP 304
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Untitled
Abstract: No abstract text available
Text: s e MIKROn Absolute Maximum Ratings Symbol C onditions V a lu e s Units 1 AC, 1 min. DIN 40 040 DIN tEC 68 T.1 1200 1200 400 / 300 800 / 600 ±20 2500 - 4 0 . . .+150 125 2 500 ?) Class F 55/150/56 Inverse Diode I f = - lc Tease — 25/80 ! C Tease 25/80 :!Cj tp —1 nts
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Untitled
Abstract: No abstract text available
Text: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E
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Q62702-C2282
OT-323
ov-27
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 402 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE BUP 402 600V h 36A Pin 3 E C Package Ordering Code TO-220 AB C67078-A4405-A2 Maximum Ratings
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O-220
C67078-A4405-A2
Dec-02-1996
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