Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z
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GA150TD120U
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Untitled
Abstract: No abstract text available
Text: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation
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10kHz
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,
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1RG4BC30K-S
S54SH
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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Untitled
Abstract: No abstract text available
Text: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode
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MG300J1US51
2-70v
MG300J1US51
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive
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GT20G102
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TCDT1102
Abstract: VISHAY MARKING SJ
Text: TCDT1100 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1100(G) series consists of a photo transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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TCDT1100
11-Jan-99
TCDT110
TCDT110.
TCDT1102
VISHAY MARKING SJ
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IRG4BC30KD-S
Abstract: No abstract text available
Text: International IG R Rectifier euminaw 4 IR G B C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 30 PD9,594A K D -S Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tjc = 1 0 ms , @360V Vce start , T j = 125°C,
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Untitled
Abstract: No abstract text available
Text: International I R Recti fi Gf PD - 5.067A PR ELIM IN A R Y GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V • G e n e ratio n 4 IG B T technology ces = 1200V • S tand ard : O p tim ize d for m inim um saturation v o lta g e and o perating freq u en cies up to 1 0 k H z
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GA150TD120U
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14N60E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged
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14N60ED/D
14N60E
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20N120C3D
Abstract: No abstract text available
Text: HGTG20N120C3D S em iconductor Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N120C3D
HGTG20N120C3D
1-800-4-HARR
20N120C3D
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P14N60E/D
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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P14N60E/D
MGP14N60E
P14N60E/D
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2N7586
Abstract: IRHMS67260 marking code mEV 2n7584 2N7486
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/753B
MIL-PRF-19500/753A
2N7580T1,
2N7582T1,
2N7584T1,
2N7586T1,
MIL-PRF-19500.
2N7586
IRHMS67260
marking code mEV
2n7584
2N7486
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2N7470
Abstract: JANS 2N7470T1
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/698E 20 May 2013 SUPERSEDING MIL-PRF-19500/698D 1 November 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE
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MIL-PRF-19500/698E
MIL-PRF-19500/698D
2N7470T1
2N7471T1,
MIL-PRF-19500.
2N7470
JANS 2N7470T1
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5252 F 1006
Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Text: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n
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K/10--
K/10-10
5252 F 1006
40r6
NF 846
RFT service-mitteilungen
"service-mitteilungen"
vqe 21
RFT Servicemitteilungen
servicemitteilungen
service-mitteilungen
5252 f 1201
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2013. MIL-PRF-19500/697E 15 May 2013 SUPERSEDING MIL-PRF-19500/697D 14 January 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/697E
MIL-PRF-19500/697D
2N7478T1,
MIL-PRF-19500.
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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RSN 3306 H
Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS
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54S/74S
RSN 3306 H
ITT RZ2 g6
TDA 8841 IC
rsn 3404
SN76670
4L71
bu 2508 af equivalent
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
sn76131
a1208 transistor
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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