Untitled
Abstract: No abstract text available
Text: GC2533-25 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.900f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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GC2533-25
Voltage30
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Untitled
Abstract: No abstract text available
Text: V360CH8 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage360 V(RMS) Max. Applied Voltage230 V(DC) Max. Applied Voltage300 I(TM) Max.(A) Peak Current500 V(C) Nom. (V) Clamping Voltage595 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy20
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V360CH8
Voltage360
Voltage230
Voltage300
Current500
Voltage595
Energy20
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Untitled
Abstract: No abstract text available
Text: SMBYT03-300 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time55n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)3.0
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SMBYT03-300
Voltage300
Time55n
Current20u
Current500u
StyleSOD-15
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Untitled
Abstract: No abstract text available
Text: 1N1345 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.66 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10 @Temp. (øC) (Test Condition)25õ
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1N1345
Voltage300
Current10m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: B125C5000/3300-400 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)5.0
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B125C5000/3300-400
Voltage300
Current20u
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Untitled
Abstract: No abstract text available
Text: SSCDA357 Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time70n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)9.0
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SSCDA357
Current12
Voltage300
Time70n
Current100u
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Untitled
Abstract: No abstract text available
Text: J-BYT03-30 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)3.0
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J-BYT03-30
Voltage300
Time25n
Current10u
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Untitled
Abstract: No abstract text available
Text: MA45340-54 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.33pì C1/C2 Min. Capacitance Ratio4.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.750 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleAxial
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MA45340-54
Voltage30
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Untitled
Abstract: No abstract text available
Text: 1N1345A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150Ï V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage.64í @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)150Ï
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1N1345A
Voltage300
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Untitled
Abstract: No abstract text available
Text: SKBB125C5000/3300 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current4.0 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)5.0
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SKBB125C5000/3300
Voltage300
Current10u
Current500u
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Untitled
Abstract: No abstract text available
Text: HA1919BCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.5.6p‘ C1/C2 Min. Capacitance Ratio3.2 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.800 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip
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HA1919BCHIP
Voltage30
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Untitled
Abstract: No abstract text available
Text: V180ZS10 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage180 V(RMS) Max. Applied Voltage115 V(DC) Max. Applied Voltage153 I(TM) Max.(A) Peak Current4.5k V(C) Nom. (V) Clamping Voltage300 @I(PP) (A) (Test Condition)50 W(TM) Max.(J) Transient Energy35
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V180ZS10
Voltage180
Voltage115
Voltage153
Voltage300
Energy35
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Untitled
Abstract: No abstract text available
Text: GC1501 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.0pì C1/C2 Min. Capacitance Ratio3.4 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.6k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C
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GC1501
Voltage30
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Untitled
Abstract: No abstract text available
Text: FST7130SM4A Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current35 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800¥ V(FM) Max.(V) Forward Voltage500mÆ @I(FM) (A) (Test Condition)30
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FST7130SM4A
Current35
Voltage30
Voltage500mÃ
Current500m
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Untitled
Abstract: No abstract text available
Text: HM1-0104-2 Diodes Fuse-Programmable Diode Matrix Circuits Per Package4 Diodes Per Circuit10 I F Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.5
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HM1-0104-2
Circuit10
Current100m
Voltage30
Time50n
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Untitled
Abstract: No abstract text available
Text: SLD24U Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current125m @Temp (øC) (Test Condition)100’ V(RRM)(V) Rep.Pk.Rev. Voltage24k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage30Æ @I(FM) (A) (Test Condition)125m @Temp. (øC) (Test Condition)25’
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SLD24U
Current125m
Voltage24k
Voltage30Ã
Current10u
StyleAxial-178
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Untitled
Abstract: No abstract text available
Text: MA46600-186 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.300f C1/C2 Min. Capacitance Ratio1.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.8.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleAxial-E
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MA46600-186
Voltage30
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Untitled
Abstract: No abstract text available
Text: GC1505H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2pì C1/C2 Min. Capacitance Ratio3.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.3k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleScrew
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GC1505H
Voltage30
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Untitled
Abstract: No abstract text available
Text: FST7130SM3D Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current35 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800¥ V(FM) Max.(V) Forward Voltage500m @I(FM) (A) (Test Condition)30 @Temp. (øC) (Test Condition)25õ
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FST7130SM3D
Current35
Voltage30
Voltage500m
Current500m
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Untitled
Abstract: No abstract text available
Text: MA46604G30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.7p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.7.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-C
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MA46604G30
Voltage30
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Untitled
Abstract: No abstract text available
Text: HM9-0186-2 Diodes Fuse-Programmable Diode Matrix Circuits Per Package6 Diodes Per Circuit8 I F Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.5
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HM9-0186-2
Current100m
Voltage30
Time50n
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Untitled
Abstract: No abstract text available
Text: HA1926C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.12p‘ C1/C2 Min. Capacitance Ratio3.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.700 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7
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HA1926C
Voltage30
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Untitled
Abstract: No abstract text available
Text: 2322592.3006 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage47 V(RMS) Max. Applied Voltage30 V(DC) Max. Applied Voltage38 I(TM) Max.(A) Peak Current100 V(C) Nom. (V) Clamping Voltage96 @I(PP) (A) (Test Condition)1.0 W(TM) Max.(J) Transient Energy1.1
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Voltage47
Voltage30
Voltage38
Current100
Voltage96
Time20n
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Untitled
Abstract: No abstract text available
Text: MA46609-276 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2p C1/C2 Min. Capacitance Ratio4.0 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.4.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialGaAs Package StyleSOD-70
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MA46609-276
Voltage30
StyleSOD-70
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