VN24 Search Results

VN2410M

Abstract: VN2410L
Contextual Info: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237

Siliconix TO-92S

Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V

4E7 philips

Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n

VN2410

Contextual Info: VN2410 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2410 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN2460

Contextual Info: VN2460 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2460 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN24061

Abstract: VN2406
Contextual Info: VN2406 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2406 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN2460N8-G

Abstract: TRANSISTOR LIZ
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

VN2450N8-G

Abstract: vn4ew
Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

VN2410L

Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
Contextual Info: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V

Contextual Info: bbS3T31 D03MDfl3 552 * A P X P h ilip s S e m ic o n d u c to rs VN2406L Data sheet status Product specification date of issue July 1993 N-channel enhancem ent m ode vertical D-M O S transistor N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - TO-92 variant

VN2460

Contextual Info: Supertex inc. VN2460 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2460 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

VN2450

Contextual Info: Supertex inc. VN2450 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2450 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

sivn

Abstract: vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

2406L

Abstract: VN2406
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

VN4E

Abstract: sot-89 MARKING CODE 4A VN2450 VN2450N3 VN2450N8
Contextual Info: VN2450 VN2450 New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450MW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

sot-89 MARKING CODE 4A

Abstract: VN2450 VN2450N3 VN2450N8 VN2450NW VN4E
Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

sot89 fr5

Abstract: vn4f VN2460 VN2460N3 VN2460N8 VN2460NW
Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 600V 20Ω 0.25A VN2460N3 VN2460N8 VN2460NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

oni 350

Abstract: transistor c 4106 VN2406L
Contextual Info: VN2406L* M AXIM UM RATINGS Sym bol Value Unit Drain-Source Voltage Voss 240 V Drain-Gate Voltage V d GR 60 V Vg S Vg s M 'd ±2 0 ±4 0 Vdc Vpk 200 mA 'd m 500 mA Pd 350 mW 2.8 m w rc - °C Rating Gate-Source Voltage - Continuous — Non-repetitive tD s 50 /is

Contextual Info: VN2410B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)240Í I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.3 Minimum Operating Temp (øC)

2406L

Abstract: VF25 VN2406
Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

Contextual Info: VN2406 VN2410 Super te x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Order Number / Package BVDss I ^DS O N ' d (ON) bvms (max) (min) TO-92 240V 6.on 1.0A VN2406L 240V ion 1.0A VN2410L Features Advanced DMOS Technology □ Free from secondary breakdown