OA41
Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
Text: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW
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MIL-STD-883
G51017-0,
OA41
LO34
on222 transistor
VGFX20K
lo4b
OA43
OAI221
VGFX100K
VGFX40K
4 BIT ADDER
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PDF
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XN2222
Abstract: OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications
Text: VITESSE Preliminary Data Sheet GLX Family High Performance Low Power GaAs Gate Arrays Features • Sea-of-Gates Core • Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility
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G52144-0,
XN2222
OA2222L
teradyne lasar
GLX120K
GLX80K
800MHZ
GLX15K
GLX220K
GLX40K
ecl nand Logic Family Specifications
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PDF
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d 2331
Abstract: half adder ic number of half adder ic with full specification vts 7070
Text: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to
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T502331
00D0574
LT117A
LT117A
d 2331
half adder ic number
of half adder ic with full specification
vts 7070
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY VITESSE VSC10000 High Performance 10000 Gate Array SEMICONDUCTOR CORPORATION Features >VLSI GaAs Gate Array • High Performance Characteristics - 13,376 2 input NOR gates in the internal array - Cell architecture is optimized for up to 1100 high drive buffered D-type flip-flops
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VSC10000
100K/10K/10KH
10K/10KH
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HLP5
Abstract: full adder using x-OR and NAND gate OAI221 OA41 G5108
Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SCFUDCFL Gate Arrays SCFX Family Features • Tailored Specifically for High Performance Telecommunications and Data Communica tions Applications. 2.5 GHz Performance. Phase-Locked Loop Megacells Available:
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STS-3/STS-12
G51085-0,
00030flfl
HLP5
full adder using x-OR and NAND gate
OAI221
OA41
G5108
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PDF
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ring oscillator
Abstract: VSC1500TC dc to ac Inverter evaluation board Semiconductor ring structure
Text: VITESSE SEMICONDUCTOR 30E J> • =1502331 GüüGaôô h « V T S VSC1500TC High Speed GaAs 1500 Gate Structured Cell Array Test Chip Introduction The VSC1500TC is a test chip personaliza tion of the VSC1500 high speed GaAs Gate Array. This chip is packaged in a ceramic 52
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VSC1500TC
VSC1500TC
VSC1500
VSC1500DUT
ring oscillator
dc to ac Inverter evaluation board
Semiconductor ring structure
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PDF
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Untitled
Abstract: No abstract text available
Text: VITESSE VSC3K/V5C5K/VSC1 OK/ VSG15K/VSC30K High Performance FURY Family Gate Arrays FEATURES • Up to 30,500 Equivalent Gates, Channeled Architecture • Mil-Std-883C, Level B Screening and Qualification Available • ECL and TTL Signal Levels • Commercial, Industrial, Military and
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Mil-Std-883C,
VSG15K/VSC30K
TSG2331
0D0103T
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PDF
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Untitled
Abstract: No abstract text available
Text: * te - PRELIMINARY DATA SHEET VITESSE VIPER Fam ily High Performance, Low Cost GaAs Gate Arrays SEMICONDUCTOR CORPORATION Features • Superior S peed/Pow er Perform ance and Com parable in Cost to BiCM OS Solutions 3 Arrays Sizes: 1,5K, 7K, and 13K Usable
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PDF
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Untitled
Abstract: No abstract text available
Text: VITESSE FEATURES • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)
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VSC1520
VSC1500DUT
VS15E0Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET VITESSE FX-M Family High Performance Gate Arrays for Military Applications SEMICONDUCTOR CORPORATION Features • Superior Perform ance: High Speed and Low Pow er Dissipation 5 Arrays from 20K to 35 0 K Gates • Mature, Rad iation Hard, G aA s E nhancem ent/
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Untitled
Abstract: No abstract text available
Text: ‘ lira % i 1992 DATA SHEET VITESSE SEMICONDUCTOR CORPORATION FX-M Family High Performance Gate Arrays for M ilitary Applications Features • Superior Perform ance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, G aA s Enhancem ent/ Depletion M E S F E T Process
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Untitled
Abstract: No abstract text available
Text: VITESSE VG FX20K /V 6FX 40K /V G FX 1O O K / VG FX 200K /V G FX 350K H igh Performance FX Family Gate Arrays FEATURES • Superior performance: High speed and low power dissipation • Embedded custom functions and megacell options available • Channelless array architecture
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FX20K
GFX20K/VGFX40K/VGFX100K/VGFX200K/VGFX350K
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET VITESSE FX~MFam ily " " “ SEMICONDUCTOR CORPORATION H igh P erform ance G ate Arrays for M ilitary Applications Features • Superior Performance: High Speed and Low Power Dissipation • Mature, Rad iation Hard, GaAs Enhancement/ Depletion M ESFET Process
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IL-STD-883C,
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PDF
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G52020-0
Abstract: VSC10000
Text: PRELIMINARY I H T ÏJ Q Ir VSC10000 mm High Performance SEMICONDUCTOR CORPORATION j 0 0 () A fm y Features • High Performance Characteristics VLSI GaAs Gate Array - D flip-flop; Clk to Q: 480 ps, toggle rate > 1GHz; Clk to Q = 588 ps, worst case (F.O. = 3 ,1 .5mm wire)
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VSC10000
100K/10K/10KH
10K/1
G52020-0
VSC10000
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PDF
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on222 transistor
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Data Sheet High Performance FX Family Gate Arrays FX Family Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW
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MIL-STD-883
G51017-0,
on222 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet High Performance SLX Family Low Power GaAs Standard Cell Arrays Features • Standard Cell Core • Low-Power Macros Available • Five Array Sizes: 10K, 26K, 48K, 72K and 110K Usable Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL,
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00034b4
G52150-0,
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PDF
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OA2222L
Abstract: XN2222 025x
Text: SEMICONDUCTOR CORPORATION Data Sheet High Performance GLX Family Low Power GaAs Gate Arrays Features • Sea-of-Gates Core Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility
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110nW
G52144-0,
OA2222L
XN2222
025x
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PDF
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A2N transistor
Abstract: No abstract text available
Text: VSC1500 VI T E SS E S E M I C O N D U C T O R 30E D • R502331 00DQ27R S HIVTS VSC1500 High Speed GaAs - 1500 Gate Structured Cell Array T - y z - ib fo Features • Superior Performance: Supports clock rates up to 1.5 GHz in Mux/Demux applications • Proven GaAs E/D MESFET Process
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R502331
00DQ27R
VSC1500
100K/10KH
VSC1500
VSC1500TC)
VSC1500TC,
A2N transistor
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PDF
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LT1038
Abstract: No abstract text available
Text: High Performance 2400 Gate TTL Compatible GaAs Gate Array FEATURES • Superiorperformance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3,1 .5 mm wire - TTL/CMOS inputs/outputs to support up to
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LT117
LT117A
LT1038
LT117A.
LT1038
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PDF
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Untitled
Abstract: No abstract text available
Text: - Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1,0.5 mm wire)
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100K/10KH
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PDF
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Untitled
Abstract: No abstract text available
Text: VIT E SS E S E M I C O N D U C T O R 3QE D • =1502331 0 0 0 0 5 7 2 2 « V T S r ^ 2 -J /~ Ÿ Û Features Architecture • Superior Performance: High Speed, High Density, Very Low Pow er Dissipation • Proven G aA s E /D M E S F E T Process • Array Perform ance
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VSC4500/VSC2000
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PDF
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ECL IC NAND
Abstract: No abstract text available
Text: 7 « 19 DATA SHEET FX Family High Performance Gate Arrays SEMICONDUCTOR CORPORATION Features • 5 A rra y s fro m 2 0 K to 3 5 0 K G a te s • C lo c k D is trib u tio n S c h e m e fo r • S u p e rio r P e rfo rm a n c e : H igh S p e e d an d L o w P o w e r D is s ip a tio n
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A2N transistor
Abstract: FZJ 165 VSC1520 VSC1500TC s92 FET trace inverter schematic VSC1500 transistor ZA 16
Text: Features • Superior Performance: Supports clock rates up to 2.5 GHz in Mux/Demux applications • Proven H-GaAs E/D MESFET Process • Array performance - Typical gate delay high speed section : 150 ps @ 23 mW (2-input XOR/XNOR, F.O. = 1, 0,5 mm wire) - Typical gate delay (low power section):
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VSC1500/VSC1520
100K/10KH
A2N transistor
FZJ 165
VSC1520
VSC1500TC
s92 FET
trace inverter schematic
VSC1500
transistor ZA 16
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PDF
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Untitled
Abstract: No abstract text available
Text: VITESSE VSC3K/VSC5K/VSC1OK/VSC15 K / VSC20K8R/VSC30K High Performance FURY Series G a te Arrays FEATURES • Superior performance: High speed/low power • High density channelled architecture up to 100% utilization • Proven 0.8(1 H-GaAs E/D M ESFET process
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VSC3K/VSC5K/VSC1OK/VSC15
VSC20K8R/VSC30K
VSC30K
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