phototransistor visible light
Abstract: KDT2001
Text: AUK CORP. Photo Transistor KDT2001 Description The KDT2001 is a high-sensitivity Silicon phototransistor mounted in a side-viewing package with visible light cut-off filter. Pin Connection 1. Emitter 2. Collector Features Thickness : 1.5mm Visible light cut-off type
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KDT2001
KDT2001
phototransistor visible light
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VISIBLE LIGHT PHOTOTRANSISTOR
Abstract: PT495F
Text: PT495F Intermediate Acceptance High Sensitivity Phototransistor PT495F • Outline Dimensions ■ Features 1. Epoxy resin package type 2. Compact 2-C0.5 1.55 1.15 0.75 4.0 1.5 2.8 2-0.8 3.0) (1.7 ) Visible light cut-off resin (black) (2-0.6 ) 43.0 ±1 5 . Visible light cut-off type
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PT495F
VISIBLE LIGHT PHOTOTRANSISTOR
PT495F
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PT495F
Abstract: No abstract text available
Text: PT495F Intermediate Acceptance High Sensitivity Phototransistor PT495F • Outline Dimensions ■ Features 1. Epoxy resin package type 2. Compact 2-C0.5 1.55 1.15 0.75 4.0 1.5 2.8 2-0.8 3.0) (1.7 ) Visible light cut-off resin (black) (2-0.6 ) 43.0 ±1 5 . Visible light cut-off type
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PT495F
PT495F
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phototransistor visible light
Abstract: PNZ109L
Text: Phototransistors PNZ109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109L
2856K
phototransistor visible light
PNZ109L
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PNZ109F
Abstract: phototransistor peak wave sensitivity 600 nm LX6400
Text: Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109F
2856K
PNZ109F
phototransistor peak wave sensitivity 600 nm
LX6400
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PN109L
Abstract: PNZ109L
Text: Phototransistors PNZ109L PN109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109L
PN109L)
PN109L
PNZ109L
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PN109F
Abstract: PNZ109F
Text: Phototransistors PNZ109F PN109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109F
PN109F)
PN109F
PNZ109F
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KDT2001
Abstract: No abstract text available
Text: Photo transistor KDT2001 Unit : mm DIMENSION The KDT2001 is a high-sensitivity NPN silicon phototransistor mounted in a side-viewing plastic package with visible light cut-off filter. This phototransistor is both compact and easy to mount. FEATURES Visible ray widely cut off mold type
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KDT2001
KDT2001
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ee-sb5
Abstract: No abstract text available
Text: Opto–Switch EE–SB5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.
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IR object DETECTOR
Abstract: phototransistor visible light REFLECTIVE OBJECT SENSOR light detector light ic
Text: Opto–Switch EE–SF5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.
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phototransistor visible light
Abstract: No abstract text available
Text: Back Opto–Switch EE–SF5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.
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tept5700
Abstract: No abstract text available
Text: TEPT5700 Vishay Semiconductors Ambient Light Sensor Description TEPT5700, Phototransistor, for ambient light sensor application, plays a key role in power savings strategies by controlling LCD display intensity and keypad backlighting of mobile devices and in industrial on/offlighting operation. It is sensitive to visible light much
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TEPT5700
TEPT5700,
TEPT5700
08-Apr-05
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phototransistor visible light
Abstract: No abstract text available
Text: Back Opto–Switch EE–SB5 –B Reflective Phototransistor output. Sensing distance 5mm. Dust-tight construction. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.
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Infrared phototransistor TO18
Abstract: phototransistor visible light BOD100 880nm
Text: This component is RoHS compliant BOD100 TO18 Plastic Phototransistor Pb FEATURES • Min/max light current selection. • Good optical to mechanical alignment • Ambient visible light filtering. • Black body gives easy recognition from IR emitter. DESCRIPTION
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BOD100
BOD100
880nm.
Infrared phototransistor TO18
phototransistor visible light
880nm
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BOD100
Abstract: Infrared phototransistor TO18
Text: BOD100 TO18 Plastic Phototransistor FEATURES • Min/max light current selection. • Good optical to mechanical alignment • Ambient visible light filtering. • Black body gives easy recognition from IR emitter. DESCRIPTION The BOD100 is a silicon phototransistor encapsulated
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BOD100
BOD100
880nm.
Infrared phototransistor TO18
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VISIBLE LIGHT PHOTOTRANSISTOR
Abstract: phototransistor visible light Phototransistors Phototransistor RPT-38PB3F RPT38PB3F datasheet phototransistor SIR-34ST3F
Text: Sensors Phototransistor, top view type RPT-38PB3F The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
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RPT-38PB3F
RPT-38PB3F
SIR-34ST3F
VISIBLE LIGHT PHOTOTRANSISTOR
phototransistor visible light
Phototransistors
Phototransistor
RPT38PB3F
datasheet phototransistor
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Untitled
Abstract: No abstract text available
Text: Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
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RPT-37PB3F
RPT-37PB3F
SIR-34ST3F
R1010A
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transistor 30021
Abstract: PNA4602M
Text: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
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PN3206
PN312D
PN322D
PN3112
PN3108
PNA3201F
PN3405
PN316K2
PN3116
PN3624K
transistor 30021
PNA4602M
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FH511
Abstract: visible communication LED FH1011 KR311 bar code phototransistor LED PS5132 BN511 DN311 DN511 PS5132
Text: ISUPER INTENSITY VISIBLE LED/INFRARED LED/PHOTO DETECTOR Stanley’s super-intensity visible and infrared LEDs 660 nm to 950 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the n n - 3 1 1, IIO - 5 1 1 and D D -1 011 series, used for light sourcing and reception,
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lin-311,
IZn-511
DD-1011
PS5132
FH511
visible communication LED
FH1011
KR311
bar code phototransistor
LED PS5132
BN511
DN311
DN511
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KR311
Abstract: FH1011
Text: •SUPER INTENSITY VISIBLE LED/ INFRARED LED/ PHOTO DETECTOR M Stanley’s super-intensity visible and infrared LEDs 660 nm to 880 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the □ □ - 3 1 1 ,-5 1 1 and -1011 series, used for light sourcing and reception, can be
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FH1011
DNP511
KR311
DN311
PS5132
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phototransistor visible light
Abstract: PN109F
Text: Panasonic Phototransistors PN109F Silicon NPN Phototransistor For optical control systems • Features • Flat window design which is suited to optical systems • Built-in filter to cutoff visible light for reducing ambient light noise • Peak sensitivity wavelength matched with infrared light emitting
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PN109F
opr10-1
phototransistor visible light
PN109F
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Untitled
Abstract: No abstract text available
Text: •SUPER INTENSITY VISIBLE LED/INFRARED LED/PHOTO DETECTOR ■ *4 Stanley’s super-intensity visible and infrared LEDs 660 nm to 950 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the ['ID - 3 1 1, H L 1-511 and L D - 1 011 series, used for light sourcing and reception,
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Untitled
Abstract: No abstract text available
Text: • S U P ER INTENSITY VISIBLE LED / INFRARED LED / PHOTO DETECTOR S tanley’s super-intensity visible and infrared LEDs 660 nm to 880 nm are suitable as light sources for optical communications, bar-code readers and sensors. The package of the □ □ - 3 1 1 , -511 and -1011 series, used for light sourcing and reception, can be
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FH1011
DNP511
DNH511
KR311
DN311
PS5132
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PP506-1
Abstract: pp-506-1 DN304 "Co Sensor" CN106 PP506 PP701 BN202 CN501 KR311
Text: •SU PER INTENSITY VISIBLE LED I INFRARED LED I PHOTO DETECTOR ■ Stanley super-intensity visible and infrared LEDs 660 nm to 925 nm are suitable as light sources for optical comm unications, bar-code readers and sensors. The package of the [ID -311, CD-511 and □□-1011 series used for light sourcing and reception can be easily combined with
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DD-S11
FH1011
DN511
FH511
BN511
NR312
NR403AF
NR513
PP506-1
pp-506-1
DN304
"Co Sensor"
CN106
PP506
PP701
BN202
CN501
KR311
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