VGS10V Search Results

YTFP450

Abstract: SC651
Contextual Info: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :

YTFP451

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ir - YTFP451 MOSI INDUSTRIAL APPLICATIONS Unit in am HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0aa±Q8 DRIVE APPLICATIONS. dl FEATURES:

YTF540

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 .3 MA X. • FEATURES: •Low Drain-Source ON Resistance : ROS(ON)= 0.07ß (Typ.)

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

Contextual Info: TOSHIBA íDISCRETE/OPTOJ T i T D T 7 E S G 9097250 TOSHIBA DISCRETE/OP' tfoâtiïba. 99D 16876 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR - DDlbñVb Y T F 6 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (TT-hosh Y - s q - ' / } HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA D I S C R E T E / O P T O SCH725G DDlT^öa 3 « T O S H 4SE D TOSHIBA FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE (tt - MOSI) '-3*. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

Contextual Info: dF TOSHIBA { D I SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO ^ /o ò h ìltt § T D T 7ES0 DülbflTD D TS^-ìj 99D 16870 T O SH IBA SEMICONDUCTOR F IE L D EFFEC T TR A N SISTO R Y T F 6 3 1 S IL IC O N TECHNICAL DATA N C H A N N EL.MOS T Y P E (T T -M O S I)

k2749

Abstract: 2SK2749 SC-65
Contextual Info: TOSHIBA 2SK2749 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2749 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 MAX. 03.2 ±0.2

transistor Sh 550

Abstract: 2SK1721
Contextual Info: 2SK1721 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 7 21 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —2.50 (Typ.)

Contextual Info: INTERNATIONAL RECTIFIER bSE D • MflSSMSE 1^3 ■ INR Bulletin E27108 International S Rectifier IRFK4HC50,IRFK4JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

ior e78996

Abstract: E78996 ior
Contextual Info: INTERNATIONAL RECTIFIER bSE » WÊ 4055452 DDlbBll T3T • INR Bulletin E27111 International ^ 1 Rectifier IRFK6H250,IRFK6J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

MA7805

Abstract: ME214 OC740
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

ask2082

Abstract: 2SK2082-01 2sk2082
Contextual Info: J. S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : Power M OSFET 2 S K 2 0 8 2- 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVEO Fuji Electric CcxJLtcL DRAWN CHECKED o z o Ï o //1 Y 0257-R-004a

2-10P1B

Abstract: 2SK2544
Contextual Info: TOSHIBA 2SK2544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2544 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGURATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm I* . • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 100 V olt VDS * RDS on>= 1 -5 0 * Spice m odel available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V VDS 100 Continuous Drain Current a tT amtj=25°C

sm 41056

Abstract: 32N25E TIC 136 Transistor 25C312
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

14MQ

Abstract: IRFK4H150 IRFK4J150
Contextual Info: Bulletin E27104 International IxsrIR a tifie r 1RFK4H150,IRFK4J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically isolated Base Plate. Easy Assembly into Eauipment

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

14N50

Abstract: STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F
Contextual Info: 7 ^ 2 3 7 Ü Ü M S 'iS l b ö T « S Ü T H Gl SGS-THOMSON i^OTi «S STH14N50/FI STW14N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 14N50 S TH 14N50FI STW 14N50 . . • . ■ ■ V dss RDS on Id 500 V 500 V 500 V < 0.45 £2 < 0.45 £2 < 0.45 n

Contextual Info: SAfiYO New Product Low On-Resistance Power MOSFETs Low on-resistance Power MOSFETs {J-MOS VDSS:12V/20V/30V Series S a n y o P o w e r MOSFETs TJ-MOS S e r i e s j m e e t t h e m a r k e t n e e d s o f l o w e r v o l t a g e d r i v e a n d m i n i a t u r i z e d s u r f a c e

n 407 diode

Contextual Info: PRODUCT N-CHANNEL ENHANCEMENT MOS FET 1000V. 11 A , 1. 15 n SD F 1 I N 100 GAF c EATURE5 • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE

LD50A

Contextual Info: i TOSHIBA FIELD EFFECT TRANSISTOR YTTM^A SILICON N CHANNEL MOS TYPE ir - YTFP152 MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nm CHOPPER REGULATOR, DC_DC CONVERTER AND MOTOR 1&0MAX. 0Z.2ÍÜ2 V. DRIVE APPLICATION.